Showing 1405–1416 of 7598 results
Infineon Technologies IPD50R500CEBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
57W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
6 Weeks |
| Published |
2013 |
| Series |
CoolMOS™ |
| Pbfree Code |
no |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
18.7nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 2.3A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
433pF @ 100V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain-source On Resistance-Max |
0.5Ohm |
| Pulsed Drain Current-Max (IDM) |
24A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
129 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD50R520CP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
compliant |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
66W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Published |
2008 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
520m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
7.1A |
| Drain-source On Resistance-Max |
0.52Ohm |
| Pulsed Drain Current-Max (IDM) |
15A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
166 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPD50R650CEAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
yes |
| Mount |
Surface Mount |
| Package / Case |
TO-252-3 |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Number of Elements |
1 |
| Turn Off Delay Time |
27 ns |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
47W |
| Terminal Form |
GULL WING |
| Published |
2008 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
500V |
| Polarity/Channel Type |
N-CHANNEL |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
47W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6 ns |
| Transistor Application |
SWITCHING |
| Rise Time |
5ns |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
6.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Input Capacitance |
342pF |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance |
650mOhm |
| Rds On Max |
650 mΩ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD50R650CEBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
47W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2017 |
| Series |
CoolMOS™ |
| Packaging |
Tape & Reel (TR) |
| Pbfree Code |
no |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
650m Ω @ 1.8A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
342pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
6.1A |
| Drain-source On Resistance-Max |
0.65Ohm |
| Pulsed Drain Current-Max (IDM) |
19A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
102 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD50R800CEBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Pbfree Code |
no |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Published |
2015 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
12.4nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 1.5A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 130μA |
| Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain-source On Resistance-Max |
0.8Ohm |
| Pulsed Drain Current-Max (IDM) |
15.5A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
83 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD530N15N3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
| Number of Elements |
1 |
| Terminal Form |
GULL WING |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
68W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 35μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
53m Ω @ 18A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
887pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
21A |
| Max Dual Supply Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD5N25S3430ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
8 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO252-3-313 |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Power Dissipation (Max) |
41W Tc |
| Turn On Delay Time |
3 ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Vgs(th) (Max) @ Id |
4V @ 13μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
422pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
6.2nC @ 10V |
| Rise Time |
2ns |
| Drain to Source Voltage (Vdss) |
250V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
430mOhm @ 5A, 10V |
| Continuous Drain Current (ID) |
5A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
250V |
| Input Capacitance |
422pF |
| Drain to Source Resistance |
370mOhm |
| Rds On Max |
430 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD60R280P7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
53W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 190μA |
| Input Capacitance (Ciss) (Max) @ Vds |
761pF @ 400V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 3.8A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
36A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
38 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD60R280P7SAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ P7 |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TO252-3 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
53W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
280mOhm @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 190μA |
| Input Capacitance (Ciss) (Max) @ Vds |
761pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain to Source Resistance |
214mOhm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD60R3K3C6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
18.1W Tc |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ C6 |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
40 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
4.6nC @ 10V |
| Rise Time |
10ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds |
93pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
1.7A |
| Gate to Source Voltage (Vgs) |
30V |
| Max Dual Supply Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
4A |
| Avalanche Energy Rating (Eas) |
6 mJ |
| Height |
2.41mm |
| Length |
6.73mm |
| Width |
6.22mm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD60R520C6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
66W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
12 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ C6 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
512pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
23.4nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
520m Ω @ 2.8A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 230μA |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
8.1A |
| Drain-source On Resistance-Max |
0.52Ohm |
| Pulsed Drain Current-Max (IDM) |
22A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
153 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPD60R600C6BTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Published |
2008 |
| Pbfree Code |
yes |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
3.5V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.4A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
20.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
7.3A |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
19A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
133 mJ |
| Pin Count |
4 |
| RoHS Status |
ROHS3 Compliant |