Showing 1417–1428 of 7598 results
Infineon Technologies IPD60R600P6
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ P6 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
557pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.4A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
7.3A |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
18A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
133 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD60R600P7SAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds |
363pF @ 400V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 1.7A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
9nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
16A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
17 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD60R650CEATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Turn Off Delay Time |
58 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Published |
2014 |
| Series |
CoolMOS™ CE |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-40°C~150°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
20.5nC @ 10V |
| Rise Time |
8ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
650m Ω @ 2.4A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 100V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
7A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.65Ohm |
| DS Breakdown Voltage-Min |
600V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPD60R650CEAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Terminal Position |
SINGLE |
| Min Operating Temperature |
-40°C |
| Max Operating Temperature |
150°C |
| Terminal Finish |
Tin (Sn) |
| ECCN Code |
EAR99 |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Pbfree Code |
yes |
| JESD-609 Code |
e3 |
| Published |
2008 |
| Packaging |
Tape & Reel (TR) |
| Number of Elements |
1 |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| JESD-30 Code |
R-PSSO-G2 |
| JEDEC-95 Code |
TO-252 |
| RoHS Status |
ROHS3 Compliant |
| Drain to Source Resistance |
540mOhm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Avalanche Energy Rating (Eas) |
133 mJ |
| Pulsed Drain Current-Max (IDM) |
19A |
| Max Dual Supply Voltage |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Reach Compliance Code |
not_compliant |
| Drain to Source Voltage (Vdss) |
600V |
| Halogen Free |
Halogen Free |
| Transistor Application |
SWITCHING |
| Case Connection |
DRAIN |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Contains Lead |
Infineon Technologies IPD60R750E6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
48W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO252-3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Tc |
| Max Operating Temperature |
150°C |
| Factory Lead Time |
12 Weeks |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
CoolMOS™ E6 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Min Operating Temperature |
-55°C |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
750mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 170μA |
| Input Capacitance (Ciss) (Max) @ Vds |
373pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17.2nC @ 10V |
| Rise Time |
7ns |
| Number of Channels |
1 |
| Turn On Delay Time |
9 ns |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
5.7A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Input Capacitance |
373pF |
| Drain to Source Resistance |
680mOhm |
| Rds On Max |
750 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPD60R750E6BTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
48W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Published |
2017 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 170μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
373pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17.2nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.75Ohm |
| Pulsed Drain Current-Max (IDM) |
15.7A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
72 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD60R950C6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
37W Tc |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ C6 |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
60 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
37W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 130μA |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
4.4A |
| Gate to Source Voltage (Vgs) |
30V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.95Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
46 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPD65R190C7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO252-3 |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
54 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
72W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ C7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
13A |
| Vgs(th) (Max) @ Id |
4V @ 290μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Turn On Delay Time |
11 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Input Capacitance |
1.15nF |
| Drain to Source Resistance |
168mOhm |
| Rds On Max |
190 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
190mOhm @ 5.7A, 10V |
| Lead Free |
Contains Lead |
Infineon Technologies IPD65R380E6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Turn Off Delay Time |
57 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ E6 |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
710pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 3.2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 320μA |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
7ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
10.6A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
29A |
| Avalanche Energy Rating (Eas) |
215 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD65R380E6BTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Published |
2008 |
| Reach Compliance Code |
not_compliant |
| Vgs(th) (Max) @ Id |
3.5V @ 320μA |
| Input Capacitance (Ciss) (Max) @ Vds |
710pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 3.2A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain-source On Resistance-Max |
0.38Ohm |
| Pulsed Drain Current-Max (IDM) |
29A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
215 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPD65R420CFDAATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83.3W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Series |
Automotive, AEC-Q101, CoolMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 345μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
8.7A |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.42Ohm |
| Pulsed Drain Current-Max (IDM) |
27A |
| Avalanche Energy Rating (Eas) |
227 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Contains Lead |
Infineon Technologies IPD65R420CFDATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
83.3W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO252-3 |
| Current - Continuous Drain (Id) @ 25℃ |
8.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Max Operating Temperature |
150°C |
| Factory Lead Time |
18 Weeks |
| Turn Off Delay Time |
38 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Elements |
1 |
| Min Operating Temperature |
-55°C |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
420mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 300μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
31.5nC @ 10V |
| Rise Time |
7ns |
| Power Dissipation |
83.3W |
| Turn On Delay Time |
10 ns |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
8.7A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Input Capacitance |
870pF |
| Rds On Max |
420 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |