Showing 1429–1440 of 7598 results
Infineon Technologies IPD65R420CFDBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2012 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83.3W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ |
| Pbfree Code |
no |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 100V |
| Pin Count |
4 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 340μA |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
8.7A |
| Drain-source On Resistance-Max |
0.42Ohm |
| Pulsed Drain Current-Max (IDM) |
27A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
227 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD65R600C6BTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Turn Off Delay Time |
80 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Vgs(th) (Max) @ Id |
3.5V @ 210μA |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.1A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Rise Time |
9ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
7.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
18A |
| Avalanche Energy Rating (Eas) |
142 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD65R660CFDBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
62.5W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
16 Weeks |
| Series |
CoolMOS™ |
| Pbfree Code |
no |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
615pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
62.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
660m Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 200μA |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
6A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.66Ohm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPD65R950C6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
37W Tc |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ C6 |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
41 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
328pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
15.3nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
37W |
| Turn On Delay Time |
6.6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 200μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Rise Time |
5.2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13.6 ns |
| Continuous Drain Current (ID) |
4.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.95Ohm |
| Drain to Source Breakdown Voltage |
650V |
| Avalanche Energy Rating (Eas) |
50 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IPD65R950CFDATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
36.7W Tc |
| Turn Off Delay Time |
43 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| Series |
CoolMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Rise Time |
6.5ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
14.1nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13.8 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Continuous Drain Current (ID) |
3.9A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.95Ohm |
| Drain to Source Breakdown Voltage |
700V |
| Pulsed Drain Current-Max (IDM) |
11A |
| Avalanche Energy Rating (Eas) |
50 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD70N10S312ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
25 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
4355pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
11.1m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 83μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
70A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.0111Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| Avalanche Energy Rating (Eas) |
410 mJ |
| RoHS Status |
ROHS3 Compliant |
| Reference Standard |
AEC-Q101 |
| Lead Free |
Contains Lead |
Infineon Technologies IPD70N10S3L12ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
35 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
14 Weeks |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~175°C TJ |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
5550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
77nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
11.5m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 83μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| Rise Time |
6ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
70A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.0152Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| Avalanche Energy Rating (Eas) |
410 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD70R2K0CEAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
42W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
163pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 70μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
4A |
| Max Dual Supply Voltage |
700V |
| Drain-source On Resistance-Max |
2Ohm |
| Pulsed Drain Current-Max (IDM) |
6.3A |
| Avalanche Energy Rating (Eas) |
11 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD70R950CEAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
68W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Terminal Position |
SINGLE |
| Factory Lead Time |
18 Weeks |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
328pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
15.3nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 150μA |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
7.4A |
| Max Dual Supply Voltage |
700V |
| Drain-source On Resistance-Max |
0.95Ohm |
| Pulsed Drain Current-Max (IDM) |
12A |
| Avalanche Energy Rating (Eas) |
50 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD78CN10NGBUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
31W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
compliant |
| Published |
2013 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 12μA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
78m Ω @ 13A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
716pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
13A |
| Drain-source On Resistance-Max |
0.078Ohm |
| Pulsed Drain Current-Max (IDM) |
52A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
17 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPD80R1K0CEATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO252-3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
72 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
83W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ CE |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Continuous Drain Current (ID) |
5.7A |
| Threshold Voltage |
3V |
| Rds On (Max) @ Id, Vgs |
950mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
785pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Turn On Delay Time |
25 ns |
| Power Dissipation |
83W |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
800V |
| Drain to Source Breakdown Voltage |
800V |
| Input Capacitance |
785pF |
| Drain to Source Resistance |
800mOhm |
| Rds On Max |
950 mΩ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IPD80R450P7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
73W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Factory Lead Time |
18 Weeks |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
770pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 220μA |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
11A |
| JEDEC-95 Code |
TO-252AA |
| Drain-source On Resistance-Max |
0.45Ohm |
| Pulsed Drain Current-Max (IDM) |
29A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
29 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |