Showing 1441–1452 of 7598 results
Infineon Technologies IPD80R600P7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2014 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 170μA |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 3.4A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
570pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
22A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD90N03S4L03ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
OptiMOS™ |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
14 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| JESD-609 Code |
e3 |
| Number of Elements |
1 |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
6ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 45μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
90A Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
94W Tc |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
7 ns |
| Turn-Off Delay Time |
37 ns |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
30V |
| Avalanche Energy Rating (Eas) |
85 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD90N04S304ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2007 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 90μA |
| Reach Compliance Code |
not_compliant |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.6m Ω @ 80A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
5200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
90A |
| Drain-source On Resistance-Max |
0.0036Ohm |
| Pulsed Drain Current-Max (IDM) |
360A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
260 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD90N04S404ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
71W Tc |
| Turn Off Delay Time |
9 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.1m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 35.2mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3440pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0041Ohm |
| Avalanche Energy Rating (Eas) |
95 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies IPD90N04S405ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
86A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
65W Tc |
| Turn Off Delay Time |
7 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
16 Weeks |
| Published |
2010 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2960pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 86A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 30μA |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
86A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0052Ohm |
| Avalanche Energy Rating (Eas) |
77 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD90N06S404ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
40 ns |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
128nC @ 10V |
| Rise Time |
70ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10400pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0038Ohm |
| Pulsed Drain Current-Max (IDM) |
360A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPD90N06S407ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
23 ns |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 40μA |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.9m Ω @ 90A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Rise Time |
3ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0069Ohm |
| Input Capacitance |
4.5nF |
| Avalanche Energy Rating (Eas) |
67 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD90N06S4L03ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2009 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Series |
OptiMOS™ |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.5m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 90μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
90A |
| Drain-source On Resistance-Max |
0.0035Ohm |
| Pulsed Drain Current-Max (IDM) |
360A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
331 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD90N06S4L03ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
140 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
150W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Vgs(th) (Max) @ Id |
2.2V @ 90μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.5m Ω @ 90A, 10V |
| Terminal Form |
GULL WING |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
6ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
60V |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD90N06S4L05ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
107W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Vgs(th) (Max) @ Id |
2.2V @ 60μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8180pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.6m Ω @ 90A, 10V |
| Terminal Form |
GULL WING |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
4ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0046Ohm |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD90N10S406ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
4870pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.7m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 90μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
90A |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.0067Ohm |
| Pulsed Drain Current-Max (IDM) |
360A |
| Avalanche Energy Rating (Eas) |
250 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Contains Lead |
Infineon Technologies IPD90P04P4L04ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2003 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Number of Channels |
1 |
| Factory Lead Time |
26 Weeks |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation-Max |
125W Tc |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±16V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
4.3m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
11570pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
90A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
176nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125W |
| Fall Time (Typ) |
60 ns |
| Turn-Off Delay Time |
140 ns |
| Continuous Drain Current (ID) |
-90A |
| Threshold Voltage |
-1.7V |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
-40V |
| Drain to Source Breakdown Voltage |
-40V |
| Avalanche Energy Rating (Eas) |
60 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Height |
2.35mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |