Showing 1465–1476 of 7598 results
Infineon Technologies IPI200N25N3GAKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
45 ns |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
7100pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 64A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 270μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
64A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
250V |
| Drain-source On Resistance-Max |
0.02Ohm |
| Pulsed Drain Current-Max (IDM) |
256A |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Contains Lead |
Infineon Technologies IPI22N03S4L15AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
31W Tc |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Published |
2007 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
980pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14.9m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 10μA |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.0149Ohm |
| Pulsed Drain Current-Max (IDM) |
88A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPI25N06S3-25
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2007 |
| Mounting Type |
Through Hole |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
48W Tc |
| Turn Off Delay Time |
16 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Through Hole |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
55V |
| Packaging |
Tube |
| Current Rating |
25A |
| Vgs(th) (Max) @ Id |
4V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1862pF @ 25V |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
48W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25.1m Ω @ 15A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
27ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPI47N10S33AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
175W Tc |
| Turn Off Delay Time |
63 ns |
| Packaging |
Tube |
| Published |
2001 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Rise Time |
23ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
33m Ω @ 33A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 2mA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
47A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
188A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies IPI50R250CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
114W Tc |
| Turn Off Delay Time |
80 ns |
| Pin Count |
3 |
| Factory Lead Time |
8 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSIP-T3 |
| Input Capacitance (Ciss) (Max) @ Vds |
1420pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
114W |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 7.8A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 520μA |
| Halogen Free |
Halogen Free |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain-source On Resistance-Max |
0.25Ohm |
| Avalanche Energy Rating (Eas) |
345 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPI50R350CP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Qualification Status |
Not Qualified |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
89W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2007 |
| Series |
CoolMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
10A |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 370μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1020pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
22A |
| Dual Supply Voltage |
550V |
| Avalanche Energy Rating (Eas) |
246 mJ |
| Nominal Vgs |
3 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Power Dissipation |
89W |
| Lead Free |
Lead Free |
Infineon Technologies IPI50R399CPXKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Turn Off Delay Time |
80 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
9A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
399m Ω @ 4.9A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 330μA |
| Input Capacitance (Ciss) (Max) @ Vds |
890pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Rise Time |
14ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
560V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Avalanche Energy Rating (Eas) |
215 mJ |
| Height |
9.45mm |
| Length |
10.2mm |
| Width |
4.5mm |
| Power Dissipation |
83W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPI60R099CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
255W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
8 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.2mA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
31A |
| Drain-source On Resistance-Max |
0.099Ohm |
| Pulsed Drain Current-Max (IDM) |
93A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
800 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPI60R125CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
208W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.1mA |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
25A |
| Drain-source On Resistance-Max |
0.125Ohm |
| Pulsed Drain Current-Max (IDM) |
82A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
708 mJ |
| JESD-30 Code |
R-PSIP-T3 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPI60R165CPAKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pin Count |
3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
192W Tc |
| Turn Off Delay Time |
50 ns |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
650V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 790μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.165Ohm |
| Pulsed Drain Current-Max (IDM) |
61A |
| Avalanche Energy Rating (Eas) |
522 mJ |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Infineon Technologies IPI60R520CPAKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
66W Tc |
| Turn Off Delay Time |
74 ns |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Published |
2011 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
520m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 340μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
630pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
6.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.52Ohm |
| Pulsed Drain Current-Max (IDM) |
17A |
| Avalanche Energy Rating (Eas) |
166 mJ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPI65R110CFDXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
68 ns |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Series |
CoolMOS™ |
| Published |
2011 |
| Packaging |
Tube |
| Min Operating Temperature |
-55°C |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
277.8W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
31.2A Tc |
| Supplier Device Package |
PG-TO262-3 |
| Number of Pins |
3 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
16 Weeks |
| FET Type |
N-Channel |
| Vgs (Max) |
±20V |
| Rds On Max |
110 mΩ |
| Drain to Source Resistance |
110mOhm |
| Input Capacitance |
3.24nF |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
31.2A |
| Fall Time (Typ) |
6 ns |
| Drain to Source Voltage (Vdss) |
650V |
| Element Configuration |
Single |
| Rise Time |
11ns |
| Gate Charge (Qg) (Max) @ Vgs |
118nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3240pF @ 100V |
| Halogen Free |
Halogen Free |
| Vgs(th) (Max) @ Id |
4.5V @ 1.3mA |
| Rds On (Max) @ Id, Vgs |
110mOhm @ 12.7A, 10V |
| RoHS Status |
RoHS Compliant |