Showing 1477–1488 of 7598 results
Infineon Technologies IPI65R280E6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
2.084002g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ E6 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
76 ns |
| Number of Channels |
1 |
| Rise Time |
9ns |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 4.4A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 440μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
13.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Drain to Source Breakdown Voltage |
700V |
| Avalanche Energy Rating (Eas) |
290 mJ |
| Height |
9.45mm |
| Length |
10.36mm |
| Width |
4.52mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPI65R420CFDXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83.3W Tc |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 340μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
8.7A |
| Drain-source On Resistance-Max |
0.42Ohm |
| Pulsed Drain Current-Max (IDM) |
27A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
227 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPI70N04S307AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2007 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Vgs (Max) |
±20V |
| Terminal Position |
SINGLE |
| Continuous Drain Current (ID) |
80A |
| Max Dual Supply Voltage |
40V |
| Drain Current-Max (Abs) (ID) |
70A |
| Drain-source On Resistance-Max |
0.0071Ohm |
| Avalanche Energy Rating (Eas) |
145 mJ |
| RoHS Status |
RoHS Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies IPI70N04S406AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
58W Tc |
| Published |
2010 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 26μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2550pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
70A |
| Drain-source On Resistance-Max |
0.0065Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
72 mJ |
| JESD-30 Code |
R-PSIP-T3 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPI70N10S3L12AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
28 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Factory Lead Time |
16 Weeks |
| Turn On Delay Time |
10 ns |
| ECCN Code |
EAR99 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
12.1m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 83μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
70A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPI80N04S3H4AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Number of Terminations |
3 |
| Mounting Type |
Through Hole |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation (Max) |
115W Tc |
| ECCN Code |
EAR99 |
| Vgs(th) (Max) @ Id |
4V @ 65μA |
| Halogen Free |
Halogen Free |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 80A, 10V |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
3900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0048Ohm |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPI80N06S2L05AKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
67 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
14 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2006 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
300W Tc |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Rise Time |
93ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5700pF @ 25V |
| Terminal Position |
SINGLE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
90 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.006Ohm |
| Avalanche Energy Rating (Eas) |
800 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPI80N06S3L-08
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
105W Tc |
| Turn Off Delay Time |
39 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Current Rating |
80A |
| Published |
2007 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
55V |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
6475pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
105W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.9m Ω @ 43A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 55μA |
| Gate Charge (Qg) (Max) @ Vgs |
134nC @ 10V |
| Rise Time |
35ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.0079Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
320A |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSIP-T3 |
| Lead Free |
Lead Free |
Infineon Technologies IPI90N06S404AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| FET Type |
N-Channel |
| Turn On Delay Time |
30 ns |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 90μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
10400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
128nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Height |
9.25mm |
| Length |
10mm |
| Width |
4.4mm |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPL60R075CFD7AUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
4-PowerTSFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
189W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
18 Weeks |
| Published |
2014 |
| Series |
CoolMOS™ CFD7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-40°C~150°C TJ |
| Terminal Form |
NO LEAD |
| Vgs(th) (Max) @ Id |
4.5V @ 760μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2721pF @ 400V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
S-PSSO-N4 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 15.1A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
67nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
33A |
| Drain-source On Resistance-Max |
0.075Ohm |
| Pulsed Drain Current-Max (IDM) |
129A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
151 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPL60R104C7AUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
4-PowerTSFN |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
2A (4 Weeks) |
| Number of Terminations |
4 |
| Power Dissipation (Max) |
122W Tc |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
4V @ 490μA |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
104m Ω @ 9.7A, 10V |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1819pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
20A |
| Max Dual Supply Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
83A |
| Avalanche Energy Rating (Eas) |
97 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPL60R299CPAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Mounting Type |
Surface Mount |
| Package / Case |
4-PowerTSFN |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
96W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
2A (4 Weeks) |
| Number of Terminations |
4 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Rise Time |
5ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
299m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 440μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 100V |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
11.1A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.299Ohm |
| Avalanche Energy Rating (Eas) |
290 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |