Showing 1489–1500 of 7598 results
Infineon Technologies IPL60R360P6SATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Weight |
75.891673mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Power Dissipation (Max) |
89.3W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ P6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Rise Time |
7ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
360m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 370μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1010pF @ 100V |
| Number of Channels |
1 |
| JESD-30 Code |
R-PDSO-N5 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
11.3A |
| Gate to Source Voltage (Vgs) |
30V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.36Ohm |
| Pulsed Drain Current-Max (IDM) |
30A |
| Avalanche Energy Rating (Eas) |
247 mJ |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Contains Lead |
Infineon Technologies IPL65R130C7AUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
4-PowerTSFN |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
102W Tc |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
2A (4 Weeks) |
| Number of Terminations |
4 |
| Terminal Finish |
Tin (Sn) |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
87 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1670pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
102W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 4.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 440μA |
| Halogen Free |
Halogen Free |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Rise Time |
5.3ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
75A |
| Avalanche Energy Rating (Eas) |
89 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPL65R195C7AUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
4-PowerTSFN |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
2A (4 Weeks) |
| Number of Terminations |
4 |
| Power Dissipation (Max) |
75W Tc |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
4V @ 290μA |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
195m Ω @ 2.9A, 10V |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
12A |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.195Ohm |
| Avalanche Energy Rating (Eas) |
57 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPL65R1K5C6SATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Weight |
75.891673mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
26.6W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
33 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
CoolMOS™ C6 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
225pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Reach Compliance Code |
not_compliant |
| Rise Time |
5.9ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
18.2 ns |
| Continuous Drain Current (ID) |
3A |
| Gate to Source Voltage (Vgs) |
30V |
| Max Dual Supply Voltage |
650V |
| Drain to Source Breakdown Voltage |
650V |
| Avalanche Energy Rating (Eas) |
26 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-N5 |
| Lead Free |
Contains Lead |
Infineon Technologies IPL65R725CFDAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
4-PowerTSFN |
| Number of Pins |
4 |
| Current - Continuous Drain (Id) @ 25℃ |
5.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
62.5W Tc |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
40 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
725m Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 200μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
615pF @ 100V |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
5.8A |
| Gate to Source Voltage (Vgs) |
30V |
| Max Dual Supply Voltage |
650V |
| Drain to Source Breakdown Voltage |
650V |
| RoHS Status |
RoHS Compliant |
| Number of Channels |
2 |
| Lead Free |
Contains Lead |
Infineon Technologies IPLU300N04S41R1XTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerSFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
300A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Factory Lead Time |
20 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
300W Tc |
| Terminal Position |
SINGLE |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
12090pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-F2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.15m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 125μA |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
151nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
300A |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.00115Ohm |
| Pulsed Drain Current-Max (IDM) |
1200A |
| Avalanche Energy Rating (Eas) |
300 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPLU300N04S4R8XTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerSFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
PG-HSOF-8 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Power Dissipation |
429W |
| Factory Lead Time |
20 Weeks |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
FLAT |
| JESD-30 Code |
R-MBCC-F2 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Power Dissipation-Max |
429W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
300A |
| Threshold Voltage |
2V |
| Rds On (Max) @ Id, Vgs |
0.77m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 230μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
22945pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
300A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
287nC @ 10V |
| Rise Time |
22ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
61 ns |
| Turn-Off Delay Time |
68 ns |
| Turn On Delay Time |
50 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain Current-Max (Abs) (ID) |
35A |
| Drain-source On Resistance-Max |
0.00077Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
290 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Feedback Cap-Max (Crss) |
300 pF |
| Height |
2.4mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPN70R360P7SATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Package / Case |
TO-261-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
7.2W Tc |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
360m Ω @ 3A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Vgs(th) (Max) @ Id |
3.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
517pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
16.4nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±16V |
| Drain-source On Resistance-Max |
0.36Ohm |
| DS Breakdown Voltage-Min |
700V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPN70R450P7SATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Package / Case |
TO-261-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
7.1W Tc |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450m Ω @ 2.3A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Vgs(th) (Max) @ Id |
3.5V @ 120μA |
| Input Capacitance (Ciss) (Max) @ Vds |
424pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
13.1nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±16V |
| Drain-source On Resistance-Max |
0.45Ohm |
| DS Breakdown Voltage-Min |
700V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPN70R750P7SATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Package / Case |
TO-261-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
6.7W Tc |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 1.4A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Vgs(th) (Max) @ Id |
3.5V @ 70μA |
| Input Capacitance (Ciss) (Max) @ Vds |
306pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
8.3nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±16V |
| Drain-source On Resistance-Max |
0.75Ohm |
| DS Breakdown Voltage-Min |
700V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPN80R1K2P7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Package / Case |
TO-261-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
6.8W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 1.7A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Vgs(th) (Max) @ Id |
3.5V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| DS Breakdown Voltage-Min |
800V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPN80R2K4P7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| ECCN Code |
EAR99 |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
6.3W Tc |
| Terminal Position |
DUAL |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4 Ω @ 800mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
3.5V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
7.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| DS Breakdown Voltage-Min |
800V |
| RoHS Status |
ROHS3 Compliant |