Showing 1501–1512 of 7598 results
Infineon Technologies IPN80R3K3P7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
6.1W Tc |
| Terminal Finish |
Tin (Sn) |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Rds On (Max) @ Id, Vgs |
3.3 Ω @ 590mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 30μA |
| Input Capacitance (Ciss) (Max) @ Vds |
120pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
5.8nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| DS Breakdown Voltage-Min |
800V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP020N06NAKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
29A Ta 120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 214W Tc |
| Turn Off Delay Time |
51 ns |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
13 Weeks |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
45ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
214W |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 143μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
7800pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
106nC @ 10V |
| Pin Count |
3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain Current-Max (Abs) (ID) |
29A |
| Drain-source On Resistance-Max |
0.002Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Avalanche Energy Rating (Eas) |
420 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP023N08N5AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| JESD-30 Code |
R-PSFM-T3 |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tube |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn Off Delay Time |
62 ns |
| Number of Channels |
1 |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.3m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 208μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
12100pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
166nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
80V |
| Drain-source On Resistance-Max |
0.0023Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| Avalanche Energy Rating (Eas) |
674 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP024N06N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Power Dissipation-Max |
250W Tc |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Turn-Off Delay Time |
79 ns |
| Turn On Delay Time |
41 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 196μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
23000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C |
120A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
275nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Height |
15.65mm |
| Length |
10mm |
| Width |
4.4mm |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IPP030N10N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Rise Time |
58ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
34 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 275μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
14800pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
100A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
206nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Power Dissipation-Max |
300W Tc |
| Fall Time (Typ) |
28 ns |
| Turn-Off Delay Time |
84 ns |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
400A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
300W |
| Lead Free |
Lead Free |
Infineon Technologies IPP034N03LGXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation-Max |
94W Tc |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
yes |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5300pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 10V |
| Rise Time |
6.4ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Power Dissipation |
94W |
| Operating Mode |
ENHANCEMENT MODE |
| Turn-Off Delay Time |
35 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Drain-source On Resistance-Max |
0.0047Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
70 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
9.2 ns |
| Lead Free |
Lead Free |
Infineon Technologies IPP039N10N5AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
188W Tc |
| Published |
2013 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.9m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 125μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7000pF @ 50V |
| JESD-30 Code |
R-PSFM-T3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
100A |
| Drain-source On Resistance-Max |
0.0039Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
196 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP045N10N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Pin Count |
3 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
214W Tc |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 150μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
8410pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
100A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
117nC @ 10V |
| Rise Time |
59ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Turn On Delay Time |
27 ns |
| Power Dissipation |
214W |
| Turn-Off Delay Time |
48 ns |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.0045Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IPP048N12N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
64 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
182nC @ 10V |
| Rise Time |
55ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Turn On Delay Time |
31 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 230μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 60V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
120V |
| Drain-source On Resistance-Max |
0.0048Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
740 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPP052NE7N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
30 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4750pF @ 37.5V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 91μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
75V |
| Drain-source On Resistance-Max |
0.0052Ohm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPP055N03LGXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
68W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
68W Tc |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Fall Time (Typ) |
4 ns |
| Continuous Drain Current (ID) |
50A |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3200pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
5.2ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Turn On Delay Time |
6.7 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Input Capacitance |
3.2nF |
| Drain to Source Resistance |
4.6mOhm |
| Rds On Max |
5.5 mΩ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
5.5mOhm @ 30A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IPP057N06N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
115W Tc |
| Turn Off Delay Time |
32 ns |
| Terminal Position |
SINGLE |
| Factory Lead Time |
13 Weeks |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
6600pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
82nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
115W |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 58μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
68ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0057Ohm |
| Avalanche Energy Rating (Eas) |
77 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |