Showing 1513–1524 of 7598 results
Infineon Technologies IPP060N06NAKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Ta 45A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 83W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
20 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Rise Time |
12ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
83W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 36μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 30V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
45A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.006Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP06N03LA
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
30 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Mount |
Through Hole |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
83W Tc |
| Voltage - Rated DC |
25V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 5V |
| Rise Time |
30ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
83W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2653pF @ 15V |
| Current Rating |
50A |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.4 ns |
| Continuous Drain Current (ID) |
50A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0099Ohm |
| Drain to Source Breakdown Voltage |
25V |
| Avalanche Energy Rating (Eas) |
225 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP072N10N3GHKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
37 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Min Operating Temperature |
-55°C |
| Mount |
Through Hole |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Power Dissipation (Max) |
150W Tc |
| Turn On Delay Time |
19 ns |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
80A |
| Vgs(th) (Max) @ Id |
3.5V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4910pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Rise Time |
37ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.2mOhm @ 80A, 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Input Capacitance |
4.91nF |
| Drain to Source Resistance |
7.2mOhm |
| Rds On Max |
7.2 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP08CNE8N G
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
95A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
167W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tube |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
SINGLE |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Vgs(th) (Max) @ Id |
4V @ 130μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.4m Ω @ 95A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
6690pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
99nC @ 10V |
| Reach Compliance Code |
compliant |
| Drain to Source Voltage (Vdss) |
85V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
95A |
| Pulsed Drain Current-Max (IDM) |
380A |
| DS Breakdown Voltage-Min |
85V |
| Avalanche Energy Rating (Eas) |
262 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP093N06N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Number of Elements |
1 |
| Factory Lead Time |
13 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Pbfree Code |
yes |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
40ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Power Dissipation |
71W |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.3m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 34μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C |
50A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Power Dissipation-Max |
71W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
50A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
200A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPP100N04S204AKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2006 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation (Max) |
300W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
172nC @ 10V |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.6m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5300pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0036Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP100N04S2L03AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
77 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2006 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Fall Time (Typ) |
27 ns |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Rise Time |
51ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| Height |
15.95mm |
| Length |
10.36mm |
| Width |
4.57mm |
| Turn On Delay Time |
19 ns |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP100N04S4H2AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
19 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
115W Tc |
| Packaging |
Tube |
| Published |
2012 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.7m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 70μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
7180pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Element Configuration |
Single |
| Voltage |
40V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0027Ohm |
| Avalanche Energy Rating (Eas) |
280 mJ |
| Height |
15.65mm |
| Length |
10mm |
| Width |
4.4mm |
| Current |
75A |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP100N06S205AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2006 |
| Series |
OptiMOS™ |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
300W Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5110pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
31ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.005Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
55V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP100N06S205AKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Package / Case |
TO-220-3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
300W Tc |
| Packaging |
Tube |
| Published |
2006 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
5110pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.005Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| RoHS Status |
RoHS Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Contains Lead |
Infineon Technologies IPP100N06S3-03
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
77 ns |
| Voltage - Rated DC |
55V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
21620pF @ 25V |
| Current Rating |
100A |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 230μA |
| Gate Charge (Qg) (Max) @ Vgs |
480nC @ 10V |
| Rise Time |
67ns |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
400A |
| RoHS Status |
RoHS Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
Infineon Technologies IPP100N08N3GHKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
22 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| JESD-30 Code |
R-PSFM-T3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Voltage (Vdss) |
80V |
| Power Dissipation |
100W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 46μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2410pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
46ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
70A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
280A |
| DS Breakdown Voltage-Min |
80V |
| Avalanche Energy Rating (Eas) |
90 mJ |
| Radiation Hardening |
No |
| Turn On Delay Time |
14 ns |
| RoHS Status |
RoHS Compliant |