Showing 1525–1536 of 7598 results
Infineon Technologies IPP100N08S2L07AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
85 ns |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Mount |
Through Hole |
| Factory Lead Time |
10 Weeks |
| Rise Time |
56ns |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.8m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
246nC @ 10V |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
75V |
| Drain-source On Resistance-Max |
0.0068Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies IPP114N03L G
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
38W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2008 |
| Series |
OptiMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
SINGLE |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11.4m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.0114Ohm |
| Pulsed Drain Current-Max (IDM) |
210A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
30 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP114N12N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Turn Off Delay Time |
30 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4310pF @ 60V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
136W |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11.4m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 83μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
36ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
75A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
120V |
| Pulsed Drain Current-Max (IDM) |
300A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPP120N04S302AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
14300pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 230μA |
| Gate Charge (Qg) (Max) @ Vgs |
210nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Terminal Position |
SINGLE |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
120A |
| Drain-source On Resistance-Max |
0.0023Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
1880 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP120N06S402AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
50 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
188W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.8m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 140μA |
| Input Capacitance (Ciss) (Max) @ Vds |
15750pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
195nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0028Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| Avalanche Energy Rating (Eas) |
560 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP120N06S4H1AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
250W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Published |
2009 |
| Series |
OptiMOS™ |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
270nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
21900pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
120A |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
1060 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP120N10S403AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2013 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
45 ns |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
10120pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.9m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 180μA |
| Halogen Free |
Halogen Free |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
480A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP120P04P404AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
49 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
52 ns |
| Turn On Delay Time |
30 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 340μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
14790pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
205nC @ 10V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
40V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-40V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Avalanche Energy Rating (Eas) |
78 mJ |
| Height |
15.95mm |
| Length |
10.36mm |
| Width |
4.57mm |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP120P04P4L03AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Turn Off Delay Time |
85 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
16ns |
| Drain to Source Voltage (Vdss) |
40V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
21 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 340μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
15000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
234nC @ 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
57 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
-40V |
| Drain-source On Resistance-Max |
0.0052Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| Avalanche Energy Rating (Eas) |
78 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP14N03LA
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
30A |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
46W Tc |
| Turn Off Delay Time |
17 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2003 |
| Series |
OptiMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
8.3nC @ 5V |
| Rise Time |
33ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
46W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13.9m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1043pF @ 15V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2.6 ns |
| Continuous Drain Current (ID) |
30A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0139Ohm |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
210A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| JESD-30 Code |
R-PSFM-T3 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP16CN10LGXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
54A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Mount |
Through Hole |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Packaging |
Tube |
| Terminal Position |
SINGLE |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15.7m Ω @ 54A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
100W |
| FET Type |
N-Channel |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
2.4V @ 61μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4190pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
54A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP16CN10NGXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
53A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
27 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Current Rating |
53A |
| Packaging |
Tube |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
100V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Pin Count |
3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
100W |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16.5m Ω @ 53A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 61μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3220pF @ 50V |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
53A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.0165Ohm |
| Pulsed Drain Current-Max (IDM) |
212A |
| Avalanche Energy Rating (Eas) |
107 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |