Transistors - FETs/MOSFETs - Single

Infineon Technologies IPP200N15N3GXKSA1

In stock

SKU: IPP200N15N3GXKSA1-11
Manufacturer

Infineon Technologies

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2008

Series

OptiMOS™

JESD-609 Code

e3

Configuration

SINGLE WITH BUILT-IN DIODE

Pbfree Code

yes

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Qualification Status

Not Qualified

Number of Elements

1

Mount

Through Hole

Factory Lead Time

13 Weeks

Rise Time

11ns

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

14 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

20m Ω @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 90μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

1820pF @ 75V

Current - Continuous Drain (Id) @ 25°C

50A Tc

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Drive Voltage (Max Rds On,Min Rds On)

8V 10V

Vgs (Max)

±20V

Power Dissipation-Max

150W Tc

Fall Time (Typ)

6 ns

Turn-Off Delay Time

23 ns

Continuous Drain Current (ID)

50A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

150V

Drain-source On Resistance-Max

0.02Ohm

Pulsed Drain Current-Max (IDM)

200A

RoHS Status

ROHS3 Compliant

Power Dissipation

150W

Lead Free

Lead Free

Infineon Technologies IPP21N03L G

In stock

SKU: IPP21N03L G-11
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Package / Case

TO-220-3

Packaging

Tube

Published

2009

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

FET Type

N-Channel

Infineon Technologies IPP410N30NAKSA1

In stock

SKU: IPP410N30NAKSA1-11
Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-220-3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

44A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

300W Tc

Turn Off Delay Time

43 ns

JESD-30 Code

R-PSFM-T3

Operating Temperature

-55°C~175°C TJ

Published

2013

Series

OptiMOS™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

13 Weeks

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Number of Channels

1

Power Dissipation

300W

Case Connection

DRAIN

Turn On Delay Time

16 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

41m Ω @ 44A, 10V

Vgs(th) (Max) @ Id

4V @ 270μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

7180pF @ 100V

Vgs (Max)

±20V

Continuous Drain Current (ID)

44A

Configuration

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

300V

Drain to Source Breakdown Voltage

300V

Avalanche Energy Rating (Eas)

240 mJ

Max Junction Temperature (Tj)

175°C

Height

20.7mm

RoHS Status

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Contains Lead

Infineon Technologies IPP45N06S3L-13

In stock

SKU: IPP45N06S3L-13-11
Manufacturer

Infineon Technologies

Packaging

Tube

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

45A Tc

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Number of Elements

1

Power Dissipation (Max)

65W Tc

Turn Off Delay Time

58 ns

Voltage - Rated DC

55V

Operating Temperature

-55°C~175°C TJ

Published

2007

Series

OptiMOS™

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Additional Feature

LOGIC LEVEL COMPATIBLE

Mounting Type

Through Hole

Mount

Through Hole

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

Current Rating

45A

Pin Count

3

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

65W

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

13.4m Ω @ 26A, 10V

Vgs(th) (Max) @ Id

2.2V @ 30μA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Rise Time

46ns

Peak Reflow Temperature (Cel)

260

Vgs (Max)

±16V

Fall Time (Typ)

124 ns

Continuous Drain Current (ID)

45A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

16V

Drain to Source Breakdown Voltage

55V

Avalanche Energy Rating (Eas)

95 mJ

RoHS Status

RoHS Compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Lead Free

Lead Free

Infineon Technologies IPP45N06S409AKSA1

In stock

SKU: IPP45N06S409AKSA1-11
Manufacturer

Infineon Technologies

Turn Off Delay Time

20 ns

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

45A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Terminal Position

SINGLE

Mount

Through Hole

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2006

Series

OptiMOS™

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Power Dissipation (Max)

71W Tc

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Rise Time

40ns

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

15 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

9.4m Ω @ 45A, 10V

Vgs(th) (Max) @ Id

4V @ 34μA

Input Capacitance (Ciss) (Max) @ Vds

3785pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ)

5 ns

Continuous Drain Current (ID)

45A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

60V

Drain-source On Resistance-Max

0.0094Ohm

Pulsed Drain Current-Max (IDM)

180A

Avalanche Energy Rating (Eas)

97 mJ

RoHS Status

ROHS3 Compliant

Infineon Technologies IPP47N10SL26AKSA1

In stock

SKU: IPP47N10SL26AKSA1-11
Manufacturer

Infineon Technologies

Packaging

Tube

Surface Mount

NO

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

47A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

175W Tc

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Operating Temperature

-55°C~175°C TJ

Published

2001

Series

SIPMOS®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

SINGLE

Package / Case

TO-220-3

Mounting Type

Through Hole

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

26m Ω @ 33A, 10V

Vgs(th) (Max) @ Id

2V @ 2mA

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Reach Compliance Code

compliant

JEDEC-95 Code

TO-220AB

Drain Current-Max (Abs) (ID)

47A

Drain-source On Resistance-Max

0.04Ohm

Pulsed Drain Current-Max (IDM)

188A

DS Breakdown Voltage-Min

100V

Avalanche Energy Rating (Eas)

400 mJ

JESD-30 Code

R-PSFM-T3

RoHS Status

RoHS Compliant

Infineon Technologies IPP50R140CPXKSA1

In stock

SKU: IPP50R140CPXKSA1-11
Manufacturer

Infineon Technologies

Published

2008

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

23A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

192W Tc

Operating Temperature

-55°C~150°C TJ

Qualification Status

Not Qualified

Factory Lead Time

8 Weeks

Series

CoolMOS™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Packaging

Tube

Element Configuration

Single

Drain to Source Voltage (Vdss)

550V

Vgs (Max)

±20V

Case Connection

ISOLATED

Turn On Delay Time

35 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

140m Ω @ 14A, 10V

Vgs(th) (Max) @ Id

3.5V @ 930μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

2540pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Rise Time

14ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

192W

Fall Time (Typ)

8 ns

Continuous Drain Current (ID)

23A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

3.5V

Max Dual Supply Voltage

500V

Drain-source On Resistance-Max

0.14Ohm

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

56A

Avalanche Energy Rating (Eas)

616 mJ

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IPP50R199CPXKSA1

In stock

SKU: IPP50R199CPXKSA1-11
Manufacturer

Infineon Technologies

Operating Mode

ENHANCEMENT MODE

Package / Case

TO-220-3

Surface Mount

NO

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2008

Series

CoolMOS™

JESD-609 Code

e3

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Pbfree Code

yes

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Qualification Status

Not Qualified

Number of Elements

1

Power Dissipation-Max

139W Tc

Element Configuration

Single

Mounting Type

Through Hole

Factory Lead Time

12 Weeks

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

199m Ω @ 9.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 660μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 100V

Current - Continuous Drain (Id) @ 25°C

17A Tc

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Rise Time

14ns

Drain to Source Voltage (Vdss)

550V

Case Connection

ISOLATED

Power Dissipation

139W

Fall Time (Typ)

10 ns

Turn-Off Delay Time

80 ns

Continuous Drain Current (ID)

17A

Threshold Voltage

3V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.199Ohm

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

40A

REACH SVHC

No SVHC

Turn On Delay Time

35 ns

RoHS Status

ROHS3 Compliant

Infineon Technologies IPP50R299CPXKSA1

In stock

SKU: IPP50R299CPXKSA1-11
Manufacturer

Infineon Technologies

Published

2008

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

12A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

104W Tc

Turn Off Delay Time

80 ns

Operating Temperature

-55°C~150°C TJ

Pin Count

3

Packaging

Tube

Series

CoolMOS™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

12 Weeks

Rise Time

14ns

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

104W

Case Connection

ISOLATED

Turn On Delay Time

35 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

299m Ω @ 6.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 440μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

1190pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Drain to Source Voltage (Vdss)

550V

Vgs (Max)

±20V

Qualification Status

Not Qualified

Fall Time (Typ)

12 ns

Continuous Drain Current (ID)

12A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

500V

Drain-source On Resistance-Max

0.299Ohm

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

26A

Avalanche Energy Rating (Eas)

289 mJ

RoHS Status

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Lead Free

Infineon Technologies IPP50R380CEXKSA1

In stock

SKU: IPP50R380CEXKSA1-11
Manufacturer

Infineon Technologies

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.9A Tc

Drive Voltage (Max Rds On, Min Rds On)

13V

Number of Elements

1

Power Dissipation (Max)

73W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Turn Off Delay Time

35 ns

Published

2008

Series

CoolMOS™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

18 Weeks

Gate Charge (Qg) (Max) @ Vgs

24.8nC @ 10V

Rise Time

5.6ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

73W

Turn On Delay Time

7.2 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

380m Ω @ 3.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 260μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

584pF @ 100V

Qualification Status

Not Qualified

Pin Count

3

Vgs (Max)

±20V

Fall Time (Typ)

8.6 ns

Continuous Drain Current (ID)

32.4A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

500V

Drain to Source Breakdown Voltage

550V

FET Feature

Super Junction

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IPP50R399CPXKSA1

In stock

SKU: IPP50R399CPXKSA1-11
Manufacturer

Infineon Technologies

Operating Mode

ENHANCEMENT MODE

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9A Ta

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

83W Tc

Turn Off Delay Time

80 ns

Operating Temperature

-55°C~150°C TJ

Published

2008

Series

CoolMOS™

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Qualification Status

Not Qualified

Element Configuration

Single

Mount

Through Hole

Factory Lead Time

8 Weeks

Threshold Voltage

3V

JEDEC-95 Code

TO-220AB

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

399m Ω @ 4.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 330μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

4nC @ 10V

Rise Time

14ns

Vgs (Max)

±20V

Fall Time (Typ)

14 ns

Continuous Drain Current (ID)

9A

Case Connection

ISOLATED

Power Dissipation

83W

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

500V

Drain Current-Max (Abs) (ID)

9A

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

20A

Avalanche Energy Rating (Eas)

215 mJ

Height

15.95mm

Length

10.36mm

Width

4.57mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

35 ns

Lead Free

Lead Free

Infineon Technologies IPP50R500CEXKSA1

In stock

SKU: IPP50R500CEXKSA1-11
Manufacturer

Infineon Technologies

Operating Mode

ENHANCEMENT MODE

Surface Mount

NO

Number of Pins

3

Current - Continuous Drain (Id) @ 25℃

7.6A Tc

Drive Voltage (Max Rds On, Min Rds On)

13V

Number of Elements

1

Turn Off Delay Time

30 ns

Packaging

Tube

Published

2008

Pbfree Code

yes

Part Status

Obsolete

Series

CoolMOS™

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

57W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Element Configuration

Single

Package / Case

TO-220-3

Mounting Type

Through Hole

Continuous Drain Current (ID)

7.6A

JEDEC-95 Code

TO-220AB

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

500m Ω @ 2.3A, 13V

Vgs(th) (Max) @ Id

3.5V @ 200μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

433pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

18.7nC @ 10V

Rise Time

5ns

Vgs (Max)

±20V

Fall Time (Typ)

12 ns

Turn On Delay Time

6 ns

Power Dissipation

57W

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.5Ohm

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

24A

Avalanche Energy Rating (Eas)

129 mJ

FET Feature

Super Junction

Height

15.95mm

Length

10.36mm

Width

4.57mm

FET Type

N-Channel

RoHS Status

RoHS Compliant