Showing 1537–1548 of 7598 results
Transistors - FETs/MOSFETs - Single
Infineon Technologies IPP200N15N3GXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Active |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2008 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Pbfree Code |
yes |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Mount |
Through Hole |
Factory Lead Time |
13 Weeks |
Rise Time |
11ns |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
14 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
20m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id |
4V @ 90μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
1820pF @ 75V |
Current - Continuous Drain (Id) @ 25°C |
50A Tc |
Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) |
8V 10V |
Vgs (Max) |
±20V |
Power Dissipation-Max |
150W Tc |
Fall Time (Typ) |
6 ns |
Turn-Off Delay Time |
23 ns |
Continuous Drain Current (ID) |
50A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
150V |
Drain-source On Resistance-Max |
0.02Ohm |
Pulsed Drain Current-Max (IDM) |
200A |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
150W |
Lead Free |
Lead Free |
Infineon Technologies IPP410N30NAKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
300W Tc |
Turn Off Delay Time |
43 ns |
JESD-30 Code |
R-PSFM-T3 |
Operating Temperature |
-55°C~175°C TJ |
Published |
2013 |
Series |
OptiMOS™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
13 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
Number of Channels |
1 |
Power Dissipation |
300W |
Case Connection |
DRAIN |
Turn On Delay Time |
16 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
41m Ω @ 44A, 10V |
Vgs(th) (Max) @ Id |
4V @ 270μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
7180pF @ 100V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
44A |
Configuration |
SINGLE WITH BUILT-IN DIODE |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
300V |
Drain to Source Breakdown Voltage |
300V |
Avalanche Energy Rating (Eas) |
240 mJ |
Max Junction Temperature (Tj) |
175°C |
Height |
20.7mm |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Contains Lead |
Infineon Technologies IPP45N06S3L-13
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
45A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
65W Tc |
Turn Off Delay Time |
58 ns |
Voltage - Rated DC |
55V |
Operating Temperature |
-55°C~175°C TJ |
Published |
2007 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
Current Rating |
45A |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
65W |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
13.4m Ω @ 26A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 30μA |
Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
Rise Time |
46ns |
Peak Reflow Temperature (Cel) |
260 |
Vgs (Max) |
±16V |
Fall Time (Typ) |
124 ns |
Continuous Drain Current (ID) |
45A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
16V |
Drain to Source Breakdown Voltage |
55V |
Avalanche Energy Rating (Eas) |
95 mJ |
RoHS Status |
RoHS Compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Lead Free |
Lead Free |
Infineon Technologies IPP45N06S409AKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Turn Off Delay Time |
20 ns |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
45A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Terminal Position |
SINGLE |
Mount |
Through Hole |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2006 |
Series |
OptiMOS™ |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Power Dissipation (Max) |
71W Tc |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Rise Time |
40ns |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
9.4m Ω @ 45A, 10V |
Vgs(th) (Max) @ Id |
4V @ 34μA |
Input Capacitance (Ciss) (Max) @ Vds |
3785pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Fall Time (Typ) |
5 ns |
Continuous Drain Current (ID) |
45A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
60V |
Drain-source On Resistance-Max |
0.0094Ohm |
Pulsed Drain Current-Max (IDM) |
180A |
Avalanche Energy Rating (Eas) |
97 mJ |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP47N10SL26AKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
175W Tc |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Operating Temperature |
-55°C~175°C TJ |
Published |
2001 |
Series |
SIPMOS® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Package / Case |
TO-220-3 |
Mounting Type |
Through Hole |
Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
26m Ω @ 33A, 10V |
Vgs(th) (Max) @ Id |
2V @ 2mA |
Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
Drain to Source Voltage (Vdss) |
100V |
Vgs (Max) |
±20V |
Reach Compliance Code |
compliant |
JEDEC-95 Code |
TO-220AB |
Drain Current-Max (Abs) (ID) |
47A |
Drain-source On Resistance-Max |
0.04Ohm |
Pulsed Drain Current-Max (IDM) |
188A |
DS Breakdown Voltage-Min |
100V |
Avalanche Energy Rating (Eas) |
400 mJ |
JESD-30 Code |
R-PSFM-T3 |
RoHS Status |
RoHS Compliant |
Infineon Technologies IPP50R140CPXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2008 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
192W Tc |
Operating Temperature |
-55°C~150°C TJ |
Qualification Status |
Not Qualified |
Factory Lead Time |
8 Weeks |
Series |
CoolMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Packaging |
Tube |
Element Configuration |
Single |
Drain to Source Voltage (Vdss) |
550V |
Vgs (Max) |
±20V |
Case Connection |
ISOLATED |
Turn On Delay Time |
35 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
140m Ω @ 14A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 930μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
2540pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
Rise Time |
14ns |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
192W |
Fall Time (Typ) |
8 ns |
Continuous Drain Current (ID) |
23A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
3.5V |
Max Dual Supply Voltage |
500V |
Drain-source On Resistance-Max |
0.14Ohm |
Drain to Source Breakdown Voltage |
500V |
Pulsed Drain Current-Max (IDM) |
56A |
Avalanche Energy Rating (Eas) |
616 mJ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IPP50R199CPXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2008 |
Series |
CoolMOS™ |
JESD-609 Code |
e3 |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Pbfree Code |
yes |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Power Dissipation-Max |
139W Tc |
Element Configuration |
Single |
Mounting Type |
Through Hole |
Factory Lead Time |
12 Weeks |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
199m Ω @ 9.9A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 660μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 100V |
Current - Continuous Drain (Id) @ 25°C |
17A Tc |
Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
Rise Time |
14ns |
Drain to Source Voltage (Vdss) |
550V |
Case Connection |
ISOLATED |
Power Dissipation |
139W |
Fall Time (Typ) |
10 ns |
Turn-Off Delay Time |
80 ns |
Continuous Drain Current (ID) |
17A |
Threshold Voltage |
3V |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.199Ohm |
Drain to Source Breakdown Voltage |
500V |
Pulsed Drain Current-Max (IDM) |
40A |
REACH SVHC |
No SVHC |
Turn On Delay Time |
35 ns |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP50R299CPXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2008 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
104W Tc |
Turn Off Delay Time |
80 ns |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
3 |
Packaging |
Tube |
Series |
CoolMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
12 Weeks |
Rise Time |
14ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation |
104W |
Case Connection |
ISOLATED |
Turn On Delay Time |
35 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
299m Ω @ 6.6A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 440μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
1190pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
Drain to Source Voltage (Vdss) |
550V |
Vgs (Max) |
±20V |
Qualification Status |
Not Qualified |
Fall Time (Typ) |
12 ns |
Continuous Drain Current (ID) |
12A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
500V |
Drain-source On Resistance-Max |
0.299Ohm |
Drain to Source Breakdown Voltage |
500V |
Pulsed Drain Current-Max (IDM) |
26A |
Avalanche Energy Rating (Eas) |
289 mJ |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Lead Free |
Infineon Technologies IPP50R380CEXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9.9A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
13V |
Number of Elements |
1 |
Power Dissipation (Max) |
73W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Turn Off Delay Time |
35 ns |
Published |
2008 |
Series |
CoolMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
18 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
24.8nC @ 10V |
Rise Time |
5.6ns |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
73W |
Turn On Delay Time |
7.2 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
380m Ω @ 3.2A, 13V |
Vgs(th) (Max) @ Id |
3.5V @ 260μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
584pF @ 100V |
Qualification Status |
Not Qualified |
Pin Count |
3 |
Vgs (Max) |
±20V |
Fall Time (Typ) |
8.6 ns |
Continuous Drain Current (ID) |
32.4A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
500V |
Drain to Source Breakdown Voltage |
550V |
FET Feature |
Super Junction |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
Infineon Technologies IPP50R399CPXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
83W Tc |
Turn Off Delay Time |
80 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2008 |
Series |
CoolMOS™ |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Threshold Voltage |
3V |
JEDEC-95 Code |
TO-220AB |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
399m Ω @ 4.9A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 330μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
890pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
4nC @ 10V |
Rise Time |
14ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
14 ns |
Continuous Drain Current (ID) |
9A |
Case Connection |
ISOLATED |
Power Dissipation |
83W |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
500V |
Drain Current-Max (Abs) (ID) |
9A |
Drain to Source Breakdown Voltage |
500V |
Pulsed Drain Current-Max (IDM) |
20A |
Avalanche Energy Rating (Eas) |
215 mJ |
Height |
15.95mm |
Length |
10.36mm |
Width |
4.57mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
35 ns |
Lead Free |
Lead Free |
Infineon Technologies IPP50R500CEXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Surface Mount |
NO |
Number of Pins |
3 |
Current - Continuous Drain (Id) @ 25℃ |
7.6A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
13V |
Number of Elements |
1 |
Turn Off Delay Time |
30 ns |
Packaging |
Tube |
Published |
2008 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Series |
CoolMOS™ |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
57W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Element Configuration |
Single |
Package / Case |
TO-220-3 |
Mounting Type |
Through Hole |
Continuous Drain Current (ID) |
7.6A |
JEDEC-95 Code |
TO-220AB |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
500m Ω @ 2.3A, 13V |
Vgs(th) (Max) @ Id |
3.5V @ 200μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
433pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
18.7nC @ 10V |
Rise Time |
5ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
12 ns |
Turn On Delay Time |
6 ns |
Power Dissipation |
57W |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.5Ohm |
Drain to Source Breakdown Voltage |
500V |
Pulsed Drain Current-Max (IDM) |
24A |
Avalanche Energy Rating (Eas) |
129 mJ |
FET Feature |
Super Junction |
Height |
15.95mm |
Length |
10.36mm |
Width |
4.57mm |
FET Type |
N-Channel |
RoHS Status |
RoHS Compliant |