Showing 1549–1560 of 7598 results
Infineon Technologies IPP50R520CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
66W Tc |
| Turn Off Delay Time |
80 ns |
| Pin Count |
3 |
| Factory Lead Time |
8 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Qualification Status |
Not Qualified |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
66W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
520m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
7.1A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain-source On Resistance-Max |
0.52Ohm |
| Drain to Source Breakdown Voltage |
550V |
| Pulsed Drain Current-Max (IDM) |
15A |
| Avalanche Energy Rating (Eas) |
166 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPP530N15N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
68W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
13 ns |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
887pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
53m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 35μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
21A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Infineon Technologies IPP60R090CFD7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
125W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
OptiMOS™ |
| Factory Lead Time |
18 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 11.4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 570μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2103pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP60R099C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
18 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1819pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 9.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 490μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
22A |
| JEDEC-95 Code |
TO-220AB |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.099Ohm |
| Pulsed Drain Current-Max (IDM) |
83A |
| Avalanche Energy Rating (Eas) |
97 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPP60R120P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
95W Tc |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1544pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 8.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 410μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.12Ohm |
| Pulsed Drain Current-Max (IDM) |
78A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
82 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP60R125CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Not For New Designs |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Number of Elements |
1 |
| Factory Lead Time |
12 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
25A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Pbfree Code |
yes |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
650V |
| Power Dissipation |
208W |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.1mA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C |
25A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Power Dissipation-Max |
208W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
50 ns |
| Continuous Drain Current (ID) |
25A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
82A |
| Avalanche Energy Rating (Eas) |
708 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPP60R190E6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
151W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Vgs(th) (Max) @ Id |
3.5V @ 630μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.19Ohm |
| Pulsed Drain Current-Max (IDM) |
59A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
418 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP60R1K4C6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
3.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
28.4W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
40 ns |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
3.2A |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 90μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
1.1nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate to Source Voltage (Vgs) |
30V |
| Max Dual Supply Voltage |
600V |
| Drain to Source Breakdown Voltage |
650V |
| Height |
15.95mm |
| Length |
10.36mm |
| Width |
4.57mm |
| RoHS Status |
RoHS Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Infineon Technologies IPP60R280E6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 430μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 6.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
284 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP60R280P6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
104W Tc |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO220-3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
13.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Turn Off Delay Time |
36 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Drain to Source Voltage (Vdss) |
600V |
| Power Dissipation |
104W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
280mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 430μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Rise Time |
6ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
13.8A |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain to Source Breakdown Voltage |
600V |
| Input Capacitance |
950pF |
| Drain to Source Resistance |
252mOhm |
| Rds On Max |
280 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
12 ns |
| Lead Free |
Lead Free |
Infineon Technologies IPP60R360P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
41W Tc |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
4V @ 140μA |
| Input Capacitance (Ciss) (Max) @ Vds |
555pF @ 400V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
360m Ω @ 2.7A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.36Ohm |
| Pulsed Drain Current-Max (IDM) |
26A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
27 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP60R385CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Packaging |
Tube |
| Published |
2007 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
790pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
385m Ω @ 5.2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 340μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.385Ohm |
| Pulsed Drain Current-Max (IDM) |
27A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
227 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |