Showing 1573–1584 of 7598 results
Infineon Technologies IPP80N04S2L03AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
77 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2006 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
300W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
213nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP80N04S306AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Packaging |
Tube |
| Published |
2007 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| HTS Code |
8541.29.00.95 |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 52μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3250pF @ 25V |
| Reach Compliance Code |
compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain-source On Resistance-Max |
0.0057Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
125 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPP80N04S4L04AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
71W Tc |
| Packaging |
Tube |
| Published |
2010 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
12ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 35μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4690pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Vgs (Max) |
+20V, -16V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Avalanche Energy Rating (Eas) |
100 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies IPP80N06S207AKSA4
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
10 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
3400pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.6m Ω @ 68A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 180μA |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Terminal Position |
SINGLE |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain-source On Resistance-Max |
0.0066Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
530 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP80N06S208AKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
32 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2006 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
215W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
96nC @ 10V |
| Rise Time |
15ns |
| Current |
80A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
215W |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 58A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2860pF @ 25V |
| Voltage |
55V |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.008Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
450 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP80N06S2H5AKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
48 ns |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
14 Weeks |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
80A |
| Power Dissipation |
300W |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 230μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.0055Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Height |
15.65mm |
| Length |
10mm |
| Width |
4.4mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP80N06S2L-07
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
210W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Mounting Type |
Through Hole |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN |
| Packaging |
Tube |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
3160pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 150μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain-source On Resistance-Max |
0.01Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
450 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP80N06S3L-06
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Turn Off Delay Time |
55 ns |
| Packaging |
Tube |
| Published |
2007 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
196nC @ 10V |
| Rise Time |
43ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
136W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.9m Ω @ 56A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9417pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Current Rating |
80A |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
39 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.0059Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Infineon Technologies IPP80N06S407AKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
23 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2006 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
79W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Rise Time |
3ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0071Ohm |
| Avalanche Energy Rating (Eas) |
71 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP80N08S207AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
61 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
50ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
26 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 25V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
75V |
| Drain-source On Resistance-Max |
0.0074Ohm |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP80P03P405AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO220-3-1 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
137W Tc |
| Turn On Delay Time |
35 ns |
| Turn Off Delay Time |
70 ns |
| Packaging |
Tube |
| Published |
2008 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Continuous Drain Current (ID) |
80A |
| Rds On (Max) @ Id, Vgs |
5mOhm @ 80A, 10V |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
10300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-30V |
| FET Type |
P-Channel |
| Input Capacitance |
7.9nF |
| Drain to Source Resistance |
5mOhm |
| Rds On Max |
5 mΩ |
| Height |
15.65mm |
| Length |
10mm |
| Width |
4.4mm |
| RoHS Status |
RoHS Compliant |
| Vgs(th) (Max) @ Id |
4V @ 253μA |
| Lead Free |
Contains Lead |
Infineon Technologies IPP80P03P4L04AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
137W Tc |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Turn Off Delay Time |
140 ns |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
30V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Turn On Delay Time |
17 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
4.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 253μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
11300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| Rise Time |
11ns |
| Vgs (Max) |
+5V, -16V |
| Fall Time (Typ) |
40 ns |
| Terminal Position |
SINGLE |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
5V |
| Max Dual Supply Voltage |
-30V |
| Drain-source On Resistance-Max |
0.007Ohm |
| Avalanche Energy Rating (Eas) |
410 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |