Showing 1585–1596 of 7598 results
Infineon Technologies IPP80P04P4L04AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Turn Off Delay Time |
119 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
+5V, -16V |
| Fall Time (Typ) |
65 ns |
| Turn On Delay Time |
28 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
4.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
176nC @ 10V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
40V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
-40V |
| Drain-source On Resistance-Max |
0.0071Ohm |
| Avalanche Energy Rating (Eas) |
60 mJ |
| Height |
15.65mm |
| Length |
10mm |
| Width |
4.4mm |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP80P04P4L08AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
75W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
42 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
+5V, -16V |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
8.2m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 120μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5430pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
| Rise Time |
11ns |
| Element Configuration |
Single |
| Turn On Delay Time |
12 ns |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
-40V |
| Height |
15.65mm |
| Length |
10mm |
| Width |
4.4mm |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPP80R1K4P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
32W Tc |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 70μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1.4A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Terminal Position |
SINGLE |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Pulsed Drain Current-Max (IDM) |
8.9A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
8 mJ |
| FET Feature |
Super Junction |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP80R280P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
101W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Published |
2013 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 7.2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 360μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
45A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
43 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP80R600P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
60W Tc |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
3.5V @ 170μA |
| Input Capacitance (Ciss) (Max) @ Vds |
570pF @ 500V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 3.4A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
22A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPP90R1K2C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Turn Off Delay Time |
400 ns |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
28nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
83W |
| Turn On Delay Time |
70 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 2.8A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 310μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
710pF @ 100V |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Pin Count |
3 |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
5.1A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
900V |
| Avalanche Energy Rating (Eas) |
68 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IPP90R800C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
104W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 100V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 4.1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 460μA |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Drain to Source Voltage (Vdss) |
900V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
6.9A |
| Drain-source On Resistance-Max |
0.8Ohm |
| Pulsed Drain Current-Max (IDM) |
15A |
| DS Breakdown Voltage-Min |
900V |
| Avalanche Energy Rating (Eas) |
157 mJ |
| JESD-30 Code |
R-PSFM-T3 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPS031N03LGAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Package / Case |
TO-251-3 |
| Number of Pins |
3 |
| Number of Elements |
1 |
| Turn Off Delay Time |
34 ns |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Qualification Status |
Not Qualified |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
94W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
9 ns |
| Transistor Application |
SWITCHING |
| Halogen Free |
Halogen Free |
| Rise Time |
6ns |
| Drain to Source Voltage (Vdss) |
30V |
| Polarity/Channel Type |
N-CHANNEL |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
90A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Element Configuration |
Single |
| Input Capacitance |
4nF |
| Avalanche Energy Rating (Eas) |
60 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance |
3.1mOhm |
| Rds On Max |
3.1 mΩ |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| Power Dissipation |
94W |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPS040N03LGAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Turn Off Delay Time |
27 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tube |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
79W |
| Turn On Delay Time |
7.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3900pF @ 15V |
| Drain to Source Voltage (Vdss) |
30V |
| Continuous Drain Current (ID) |
90A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
89A |
| Drain-source On Resistance-Max |
0.0059Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| REACH SVHC |
No SVHC |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IPS050N03LGAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
68W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3200pF @ 15V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 30A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-251AA |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain-source On Resistance-Max |
0.0073Ohm |
| Pulsed Drain Current-Max (IDM) |
350A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPS06N03LZ G
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Published |
2008 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
2V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2653pF @ 15V |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.9m Ω @ 30A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 5V |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Pulsed Drain Current-Max (IDM) |
350A |
| DS Breakdown Voltage-Min |
25V |
| Avalanche Energy Rating (Eas) |
225 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPS090N03LGAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
42W Tc |
| Terminal Finish |
Tin (Sn) |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 30A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
42W |
| FET Type |
N-Channel |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Pulsed Drain Current-Max (IDM) |
280A |
| Avalanche Energy Rating (Eas) |
70 mJ |
| RoHS Status |
RoHS Compliant |