Showing 1597–1608 of 7598 results
Infineon Technologies IPS110N12N3GBKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
136W Tc |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Halogen Free |
Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4310pF @ 60V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 83μA |
| Terminal Position |
SINGLE |
| Terminal Finish |
Tin (Sn) |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
75A |
| Max Dual Supply Voltage |
120V |
| Drain-source On Resistance-Max |
0.011Ohm |
| Avalanche Energy Rating (Eas) |
120 mJ |
| RoHS Status |
RoHS Compliant |
| Pin Count |
4 |
| Lead Free |
Contains Lead |
Infineon Technologies IPS60R800CEAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Surface Mount |
NO |
| Number of Elements |
1 |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Reach Compliance Code |
not_compliant |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-251 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Transistor Application |
SWITCHING |
| Halogen Free |
Halogen Free |
| Drain to Source Voltage (Vdss) |
600V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.8Ohm |
| Pulsed Drain Current-Max (IDM) |
15.7A |
| Avalanche Energy Rating (Eas) |
72 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPS65R1K0CEAKMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Current - Continuous Drain (Id) @ 25℃ |
7.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
68W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ CE |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
328pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
15.3nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPS65R1K4C6AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
3.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
28W Tc |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
33 ns |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
225pF @ 100V |
| Reach Compliance Code |
not_compliant |
| Element Configuration |
Single |
| Power Dissipation |
28W |
| Turn On Delay Time |
7.7 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 100μA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 10V |
| Vgs (Max) |
±20V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Continuous Drain Current (ID) |
3.2A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies IPS65R600E6AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Packaging |
Tube |
| Published |
2015 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ E6 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 100V |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 210μA |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
7.3A |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
18A |
| Avalanche Energy Rating (Eas) |
142 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies IPS65R650CEAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
86W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
650m Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 210μA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| JESD-30 Code |
R-PSIP-T3 |
| Vgs (Max) |
±20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.65Ohm |
| Pulsed Drain Current-Max (IDM) |
18A |
| Avalanche Energy Rating (Eas) |
142 mJ |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Infineon Technologies IPS70R1K4CEAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Current - Continuous Drain (Id) @ 25℃ |
5.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
53W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 100μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
225pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
5.4A |
| Max Dual Supply Voltage |
700V |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPS70R360P7SAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
12.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
59.5W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
360m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
517pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
16.4nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±16V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPS80R1K4P7AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
32W Tc |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1.4A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
3.5V @ 700μA |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Terminal Position |
SINGLE |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
4A |
| Pulsed Drain Current-Max (IDM) |
8.9A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
8 mJ |
| FET Feature |
Super Junction |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPS80R750P7AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
51W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
3.5V @ 140μA |
| Input Capacitance (Ciss) (Max) @ Vds |
460pF @ 500V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 2.7A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.75Ohm |
| Pulsed Drain Current-Max (IDM) |
17A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
16 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPSA70R1K4P7SAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
22.7W Tc |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 700mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 40μA |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
158pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
4.7nC @ 400V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±16V |
| Pulsed Drain Current-Max (IDM) |
8.2A |
| DS Breakdown Voltage-Min |
700V |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPSA70R600CEAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
86W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
18 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
3.5V @ 210μA |
| Input Capacitance (Ciss) (Max) @ Vds |
474pF @ 100V |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 1A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
18A |
| DS Breakdown Voltage-Min |
700V |
| Avalanche Energy Rating (Eas) |
55 mJ |
| RoHS Status |
ROHS3 Compliant |