Showing 1609–1620 of 7598 results
Infineon Technologies IPSA70R950CEAKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
94W Tc |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
328pF @ 100V |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 1.5A, 10V |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
15.3nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.95Ohm |
| Pulsed Drain Current-Max (IDM) |
12A |
| DS Breakdown Voltage-Min |
700V |
| Avalanche Energy Rating (Eas) |
50 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPT111N20NFDATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerSFN |
| Manufacturer Package Identifier |
PG-HSOF-8 |
| Current - Continuous Drain (Id) @ 25℃ |
96A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
375W Tc |
| ECCN Code |
EAR99 |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn Off Delay Time |
39 ns |
| Terminal Finish |
Tin (Sn) |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
375W |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
11.1m Ω @ 96A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 267μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
7000pF @ 100V |
| Reach Compliance Code |
not_compliant |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
96A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
200V |
| Drain to Source Breakdown Voltage |
200V |
| Max Junction Temperature (Tj) |
175°C |
| Height |
2.4mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPT60R150G7XTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerSFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ G7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
106W Tc |
| Terminal Position |
SINGLE |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 5.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 260μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-F3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
902pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.15Ohm |
| Pulsed Drain Current-Max (IDM) |
45A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
53 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPT65R033G7XTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Package / Case |
8-PowerSFN |
| Manufacturer Package Identifier |
PG-HSOF-8 |
| Current - Continuous Drain (Id) @ 25℃ |
69A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
391W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
85 ns |
| Published |
2013 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
5000pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Number of Channels |
1 |
| Power Dissipation |
391W |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
33m Ω @ 28.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1.44mA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Finish |
Tin (Sn) |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
69A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
650V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
2.4mm |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPU039N03LGXK
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO251-3 |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
94W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.9mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5300pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
50A |
| Input Capacitance |
5.3nF |
| Rds On Max |
3.9 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPU60R1K0CEAKMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
61W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tube |
| Series |
CoolMOS™ CE |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 130μA |
| Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
4.3A |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
1Ohm |
| Pulsed Drain Current-Max (IDM) |
12A |
| Avalanche Energy Rating (Eas) |
46 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSIP-T3 |
| Lead Free |
Contains Lead |
Infineon Technologies IPU60R1K4C6AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
28.4W Tc |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ C6 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1.1A, 10V |
| Terminal Position |
SINGLE |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
3.5V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 100V |
| Terminal Finish |
Tin (Sn) |
| Gate Charge (Qg) (Max) @ Vgs |
9.4nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
3.2A |
| Max Dual Supply Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
8A |
| Avalanche Energy Rating (Eas) |
26 mJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPU60R1K4C6BKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
28.4W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~155°C TJ |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
9.4nC @ 10V |
| Pin Count |
3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
28.4W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 100V |
| Rise Time |
7ns |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
3.2A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
8A |
| Avalanche Energy Rating (Eas) |
26 mJ |
| FET Feature |
Super Junction |
| JESD-30 Code |
R-PSIP-T3 |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IPU80R1K0CEBKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO251-3 |
| Weight |
343.085929mg |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
83W Tc |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Turn Off Delay Time |
72 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Rds On (Max) @ Id, Vgs |
950mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Halogen Free |
Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
785pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
800V |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
5.7A |
| Gate to Source Voltage (Vgs) |
30V |
| Max Dual Supply Voltage |
800V |
| Input Capacitance |
785pF |
| Drain to Source Resistance |
950mOhm |
| Rds On Max |
950 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPU80R2K4P7AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
22W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Rds On (Max) @ Id, Vgs |
2.4 Ω @ 800mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 40μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
7.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Pulsed Drain Current-Max (IDM) |
5.3A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
4 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPU80R3K3P7AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
18W Tc |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 30μA |
| Input Capacitance (Ciss) (Max) @ Vds |
120pF @ 500V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3 Ω @ 590mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
5.8nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Pulsed Drain Current-Max (IDM) |
3.8A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
2 mJ |
| JESD-30 Code |
R-PSIP-T3 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPU80R4K5P7AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
13W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Published |
2013 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
4nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 200μA |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSIP-T3 |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.5A |
| Drain-source On Resistance-Max |
4.5Ohm |
| Pulsed Drain Current-Max (IDM) |
2.6A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
1 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |