Showing 1621–1632 of 7598 results
Infineon Technologies IPU80R750P7AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
51W Tc |
| Packaging |
Tube |
| Published |
2014 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 140μA |
| Input Capacitance (Ciss) (Max) @ Vds |
460pF @ 500V |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 2.7A, 10V |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.75Ohm |
| Pulsed Drain Current-Max (IDM) |
17A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
16 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPU95R750P7AKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ P7 |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
73W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2018 |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 220μA |
| Input Capacitance (Ciss) (Max) @ Vds |
712pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
950V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPW50R190CEFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
127W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Number of Terminations |
3 |
| Factory Lead Time |
6 Weeks |
| Turn Off Delay Time |
54 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Elements |
1 |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
47.2nC @ 10V |
| Rise Time |
8.5ns |
| Power Dissipation |
127W |
| Turn On Delay Time |
9.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 6.2A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 510μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1137pF @ 100V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7.5 ns |
| Continuous Drain Current (ID) |
18.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| FET Feature |
Super Junction |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPW50R280CEFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
92W Tc |
| Terminal Position |
SINGLE |
| Turn Off Delay Time |
40 ns |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
52 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
32.6nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 4.2A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 350μA |
| Input Capacitance (Ciss) (Max) @ Vds |
773pF @ 100V |
| Rise Time |
6.4ns |
| Vgs (Max) |
±20V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Fall Time (Typ) |
7.6 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
42.9A |
| FET Feature |
Super Junction |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Infineon Technologies IPW50R299CPFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1190pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
299m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 440μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-247AD |
| Drain Current-Max (Abs) (ID) |
12A |
| Drain-source On Resistance-Max |
0.299Ohm |
| Pulsed Drain Current-Max (IDM) |
26A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
289 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPW50R350CPFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
89W Tc |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1020pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 370μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-247AD |
| Drain Current-Max (Abs) (ID) |
10A |
| Drain-source On Resistance-Max |
0.35Ohm |
| Pulsed Drain Current-Max (IDM) |
22A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
246 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPW60R040C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
227W Tc |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2007 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 24.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1.24mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4340pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
107nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
50A |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.04Ohm |
| Pulsed Drain Current-Max (IDM) |
211A |
| Avalanche Energy Rating (Eas) |
249 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSFM-T3 |
| Lead Free |
Lead Free |
Infineon Technologies IPW60R040CFD7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
227W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
OptiMOS™ |
| Factory Lead Time |
18 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 24.9A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 1.25mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4354pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
109nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPW60R045CPAFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
431W Tc |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Pin Count |
3 |
| Factory Lead Time |
18 Weeks |
| Series |
Automotive, AEC-Q101, CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
431W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 3mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.045Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
230A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
25.4mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPW60R045CPFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
431W Tc |
| Turn Off Delay Time |
100 ns |
| Current Rating |
60A |
| Factory Lead Time |
49 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
431W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 3mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Rise Time |
20ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.045Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Height |
25.549mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPW60R060P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Number of Elements |
1 |
| JESD-609 Code |
e3 |
| Number of Channels |
1 |
| Current - Continuous Drain (Id) @ 25°C |
48A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
67nC @ 10V |
| Power Dissipation |
164W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 15.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 800μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2895pF @ 400V |
| Power Dissipation-Max |
164W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
79 ns |
| Continuous Drain Current (ID) |
48A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.06Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
25.4mm |
| RoHS Status |
ROHS3 Compliant |