Showing 1633–1644 of 7598 results
Infineon Technologies IPW60R070CFD7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
156W Tc |
| Published |
2014 |
| Series |
CoolMOS™ CFD7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2721pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
67nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 15.1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 760μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
31A |
| Drain-source On Resistance-Max |
0.07Ohm |
| Pulsed Drain Current-Max (IDM) |
129A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
151 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPW60R075CPAFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
yes |
| Mount |
Through Hole |
| Package / Case |
TO-247 |
| Number of Pins |
3 |
| Number of Elements |
1 |
| Turn Off Delay Time |
110 ns |
| Published |
2010 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
18 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| JESD-609 Code |
e3 |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
39A |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
40 ns |
| Transistor Application |
SWITCHING |
| Rise Time |
17ns |
| Drain to Source Voltage (Vdss) |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Fall Time (Typ) |
7 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.075Ohm |
| Avalanche Energy Rating (Eas) |
1150 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPW60R099C6FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
37.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
278W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
26 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
3.5V @ 1.21mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2660pF @ 100V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 18.1A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
119nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
37.9A |
| Drain-source On Resistance-Max |
0.099Ohm |
| Pulsed Drain Current-Max (IDM) |
112A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
796 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPW60R120P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
95W Tc |
| Terminal Finish |
Tin (Sn) |
| Vgs(th) (Max) @ Id |
4V @ 410μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1544pF @ 400V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 8.2A, 10V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.12Ohm |
| Pulsed Drain Current-Max (IDM) |
78A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
82 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPW60R125CPFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Turn Off Delay Time |
50 ns |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
3.5V @ 1.1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 100V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
208W |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 16A, 10V |
| Current Rating |
25A |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
82A |
| Avalanche Energy Rating (Eas) |
708 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
Infineon Technologies IPW60R180C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
68W Tc |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 260μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 5.3A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1080pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| Terminal Position |
SINGLE |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
13A |
| Drain-source On Resistance-Max |
0.18Ohm |
| Pulsed Drain Current-Max (IDM) |
45A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
53 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPW60R199CPFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
139W Tc |
| Voltage - Rated DC |
600V |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
50 ns |
| Terminal Position |
SINGLE |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
199m Ω @ 9.9A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
139W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
16A |
| Vgs(th) (Max) @ Id |
3.5V @ 660μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1520pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
16A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPW60R280C6FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Turn Off Delay Time |
100 ns |
| Packaging |
Tube |
| Published |
2007 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Rise Time |
11ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
104W |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 430μA |
| Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 100V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
13.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
284 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
Infineon Technologies IPW60R280P6FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Max Operating Temperature |
150°C |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO247-3 |
| Weight |
38.000013g |
| Current - Continuous Drain (Id) @ 25℃ |
13.8A Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
36 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ P6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
280mOhm @ 5.2A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 430μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1190pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
25.5nC @ 10V |
| Rise Time |
6ns |
| Number of Channels |
1 |
| Min Operating Temperature |
-55°C |
| Continuous Drain Current (ID) |
13.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Input Capacitance |
1.19nF |
| Drain to Source Resistance |
252mOhm |
| Rds On Max |
280 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
104W |
| Lead Free |
Lead Free |
Infineon Technologies IPW65R099C6FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
278W Tc |
| Turn Off Delay Time |
77 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2780pF @ 100V |
| Pin Count |
3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
278W |
| Turn On Delay Time |
10.6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 12.8A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs |
127nC @ 10V |
| Rise Time |
9ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
38A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.099Ohm |
| Avalanche Energy Rating (Eas) |
845 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSFM-T3 |
| Lead Free |
Lead Free |
Infineon Technologies IPW65R110CFDAFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
yes |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
Automotive, AEC-Q101, CoolMOS™ |
| Number of Elements |
1 |
| Factory Lead Time |
18 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-609 Code |
e3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 12.7A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 1.3mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3240pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C |
31.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
118nC @ 10V |
| Rise Time |
11ns |
| Power Dissipation-Max |
277.8W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
6 ns |
| Turn-Off Delay Time |
68 ns |
| Continuous Drain Current (ID) |
31.2A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.11Ohm |
| Pulsed Drain Current-Max (IDM) |
99.6A |
| Avalanche Energy Rating (Eas) |
845 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPW65R190C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
72W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Max Operating Temperature |
150°C |
| Factory Lead Time |
18 Weeks |
| Turn Off Delay Time |
54 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ C7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Elements |
1 |
| Min Operating Temperature |
-55°C |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
190mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 290μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Power Dissipation |
72W |
| Turn On Delay Time |
11 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Input Capacitance |
1.15nF |
| Drain to Source Resistance |
404mOhm |
| Rds On Max |
190 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |