Showing 1645–1656 of 7598 results
Infineon Technologies IPW65R190CFDFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
151W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
4.5V @ 730μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1850pF @ 100V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 7.3A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
17.5A |
| Drain-source On Resistance-Max |
0.19Ohm |
| Pulsed Drain Current-Max (IDM) |
57.2A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
484 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPW65R280C6FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Turn Off Delay Time |
105 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Published |
2009 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
104W |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 4.4A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 440μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
13.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
39A |
| Avalanche Energy Rating (Eas) |
290 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPW65R420CFDFKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83.3W Tc |
| Turn Off Delay Time |
38 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Rise Time |
7ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
83.3W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 340μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 100V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
8.7A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain-source On Resistance-Max |
0.42Ohm |
| Pulsed Drain Current-Max (IDM) |
27A |
| Avalanche Energy Rating (Eas) |
227 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPW90R1K0C3FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
89W Tc |
| Turn Off Delay Time |
400 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
6 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Pin Count |
3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
89W |
| Turn On Delay Time |
70 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 3.3A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 370μA |
| Input Capacitance (Ciss) (Max) @ Vds |
850pF @ 100V |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
5.7A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
900V |
| Drain-source On Resistance-Max |
1Ohm |
| Pulsed Drain Current-Max (IDM) |
12A |
| Avalanche Energy Rating (Eas) |
97 mJ |
| RoHS Status |
RoHS Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
Infineon Technologies IPW90R340C3FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
40 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 100V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
340m Ω @ 9.2A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
94nC @ 10V |
| Drain to Source Voltage (Vdss) |
900V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
15A |
| Drain-source On Resistance-Max |
0.34Ohm |
| Pulsed Drain Current-Max (IDM) |
34A |
| DS Breakdown Voltage-Min |
900V |
| Avalanche Energy Rating (Eas) |
678 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPZ40N04S58R4ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7V 10V |
| Number of Elements |
1 |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
34W Tc |
| Terminal Position |
DUAL |
| Vgs(th) (Max) @ Id |
3.4V @ 10μA |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.4m Ω @ 20A, 10V |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
771pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
13.7nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0099Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
24 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPZ40N04S5L7R4ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Number of Elements |
1 |
| Factory Lead Time |
16 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-N3 |
| Pbfree Code |
yes |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
34W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
2 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.4m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 10μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
920pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
40A Tc |
| Number of Channels |
1 |
| Power Dissipation-Max |
34W Tc |
| Vgs (Max) |
±16V |
| Turn-Off Delay Time |
6 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
40V |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
24 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Height |
1.15mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPZ60R060C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
162W Tc |
| Published |
2015 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2850pF @ 400V |
| JESD-30 Code |
R-PSFM-T4 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 15.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 800μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
35A |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.06Ohm |
| Avalanche Energy Rating (Eas) |
159 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
Infineon Technologies IPZ60R099C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 9.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 490μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1819pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
22A |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.099Ohm |
| Pulsed Drain Current-Max (IDM) |
83A |
| Avalanche Energy Rating (Eas) |
97 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSFM-T4 |
| Lead Free |
Lead Free |
Infineon Technologies IPZ60R099P6FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
37.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ P6 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Power Dissipation (Max) |
278W Tc |
| Terminal Finish |
Tin (Sn) |
| Vgs(th) (Max) @ Id |
4.5V @ 1.21mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3330pF @ 100V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T4 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 14.5A, 10V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
37.9A |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.099Ohm |
| Pulsed Drain Current-Max (IDM) |
109A |
| Avalanche Energy Rating (Eas) |
796 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPZA60R037P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2017 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Power Dissipation (Max) |
255W Tc |
| Terminal Finish |
Tin (Sn) |
| Vgs(th) (Max) @ Id |
4V @ 1.48mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5243pF @ 400V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T4 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
37m Ω @ 29.5A, 10V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
121nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.037Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
295 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF100S201
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK (TO-263AB) |
| Current - Continuous Drain (Id) @ 25℃ |
192A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
441W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.2mOhm @ 115A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9500pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
255nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
192A |
| Input Capacitance |
9.5nF |
| Drain to Source Resistance |
3.5mOhm |
| Rds On Max |
4.2 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |