Showing 1657–1668 of 7598 results
Infineon Technologies IRF1010EPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Series |
HEXFET® |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
12mOhm |
| Voltage - Rated DC |
60V |
| Current Rating |
84A |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
170W |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
12 ns |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
84A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
78ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
53 ns |
| Turn-Off Delay Time |
48 ns |
| Continuous Drain Current (ID) |
84A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
60V |
| Dual Supply Voltage |
60V |
| Nominal Vgs |
4 V |
| Height |
16.51mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF1010ESTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
12mOhm |
| Voltage - Rated DC |
60V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
84A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
53 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
84A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
78ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
48 ns |
| Continuous Drain Current (ID) |
84A |
| Power Dissipation |
170W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
60V |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
12 ns |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF1010EZSTRLP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
38 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Series |
HEXFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Power Dissipation (Max) |
140W Tc |
| Resistance |
8.5MOhm |
| Rise Time |
90ns |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 51A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2810pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
140W |
| Fall Time (Typ) |
54 ns |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF1010ZLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
140W |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
36 ns |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Voltage - Rated DC |
55V |
| Current Rating |
75A |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2840pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Rise Time |
150ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
92 ns |
| FET Type |
N-Channel |
| Turn On Delay Time |
18 ns |
| Drain to Source Breakdown Voltage |
55V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 75A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF1310NSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
3.8W |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
36mOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
42A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
3.8W Ta 160W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
42A |
| Turn On Delay Time |
11 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
36m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
42A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
56ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Turn-Off Delay Time |
45 ns |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
420 mJ |
| Recovery Time |
270 ns |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF1324LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
83 ns |
| FET Type |
N-Channel |
| Mount |
Through Hole |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
300W |
| Turn On Delay Time |
17 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Rds On (Max) @ Id, Vgs |
1.65mOhm @ 195A, 10V |
| Drain to Source Breakdown Voltage |
24V |
| Input Capacitance |
7.59nF |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
190ns |
| Drain to Source Voltage (Vdss) |
24V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
120 ns |
| Continuous Drain Current (ID) |
340A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7590pF @ 24V |
| Drain to Source Resistance |
1.65mOhm |
| Rds On Max |
1.65 mΩ |
| Nominal Vgs |
4 V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF1324S-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
86 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
24V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
429A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G6 |
| Published |
2006 |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1m Ω @ 160A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7700pF @ 19V |
| Gate Charge (Qg) (Max) @ Vgs |
252nC @ 10V |
| Rise Time |
240ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
93 ns |
| Continuous Drain Current (ID) |
429A |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Drain Current-Max (Abs) (ID) |
240A |
| Drain to Source Breakdown Voltage |
24V |
| Dual Supply Voltage |
24V |
| Avalanche Energy Rating (Eas) |
230 mJ |
| Recovery Time |
107 ns |
| Nominal Vgs |
4 V |
| Height |
4.5466mm |
| Length |
10.795mm |
| Width |
8.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF1324SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
83 ns |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
300W |
| Turn On Delay Time |
17 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Rds On (Max) @ Id, Vgs |
1.65mOhm @ 195A, 10V |
| Drain to Source Breakdown Voltage |
24V |
| Dual Supply Voltage |
24V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
190ns |
| Drain to Source Voltage (Vdss) |
24V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
120 ns |
| Continuous Drain Current (ID) |
340A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7590pF @ 24V |
| Input Capacitance |
7.59nF |
| Drain to Source Resistance |
1.65mOhm |
| Rds On Max |
1.65 mΩ |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF1324STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
83 ns |
| Turn On Delay Time |
17 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
300W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
195A |
| Rds On (Max) @ Id, Vgs |
1.65mOhm @ 195A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
7590pF @ 24V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
190ns |
| Drain to Source Voltage (Vdss) |
24V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
120 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
24V |
| FET Type |
N-Channel |
| Input Capacitance |
7.59nF |
| Rds On Max |
1.65 mΩ |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF1404LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
162A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 200W Tc |
| Turn Off Delay Time |
72 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Element Configuration |
Single |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
4mOhm |
| Voltage - Rated DC |
40V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
162A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
162A |
| Power Dissipation |
200W |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 95A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
140ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
26 ns |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
650A |
| Nominal Vgs |
4 V |
| Height |
9.652mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies IRF1405ZLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Current Rating |
75A |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
4.9MOhm |
| Voltage - Rated DC |
55V |
| Turn Off Delay Time |
48 ns |
| Power Dissipation |
230W |
| Fall Time (Typ) |
82 ns |
| Continuous Drain Current (ID) |
75A |
| Rds On (Max) @ Id, Vgs |
4.9m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4780pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
110ns |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF1503PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330W Tc |
| Turn Off Delay Time |
59 ns |
| Power Dissipation |
330W |
| Factory Lead Time |
12 Weeks |
| Published |
2002 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Current Rating |
75A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~175°C TJ |
| Case Connection |
DRAIN |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 140A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5730pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
130ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
48 ns |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
4V |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
960A |
| Avalanche Energy Rating (Eas) |
980 mJ |
| Nominal Vgs |
4 V |
| Height |
16.51mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |