Showing 1669–1680 of 7598 results
Infineon Technologies IRF1503SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
59 ns |
| Element Configuration |
Single |
| Factory Lead Time |
14 Weeks |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
3.3MOhm |
| Voltage - Rated DC |
30V |
| Current Rating |
75A |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
200W |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 140A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5730pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
130ns |
| Vgs (Max) |
±20V |
| Forward Voltage |
1.3V |
| Fall Time (Typ) |
48 ns |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF150P220XKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
StrongIRFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
203A |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
556W Tc |
| Operating Temperature |
-55°C~175°C |
| Packaging |
Tube |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.7m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4.6V @ 265μA |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF1607PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
380W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
142A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Turn Off Delay Time |
84 ns |
| Packaging |
Tube |
| Published |
2001 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
7.5Ohm |
| Voltage - Rated DC |
75V |
| Current Rating |
142A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 85A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7750pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
320nC @ 10V |
| Rise Time |
130ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
86 ns |
| Continuous Drain Current (ID) |
142A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
22 ns |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
570A |
| Dual Supply Voltage |
75V |
| Nominal Vgs |
4 V |
| Height |
16.51mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF2204LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Min Operating Temperature |
-55°C |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Power Dissipation (Max) |
200W Tc |
| Voltage - Rated DC |
40V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.6mOhm @ 130A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5890pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
140ns |
| Current Rating |
170A |
| Power Dissipation |
200W |
| Continuous Drain Current (ID) |
170A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Input Capacitance |
5.89nF |
| Rds On Max |
3.6 mΩ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF2804STRR7PP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK (7-Lead) |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
330W Tc |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Turn Off Delay Time |
130 ns |
| Power Dissipation |
330W |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
130 ns |
| Rds On (Max) @ Id, Vgs |
1.6mOhm @ 160A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6930pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
| Rise Time |
120ns |
| Drain to Source Voltage (Vdss) |
40V |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Input Capacitance |
6.93nF |
| Drain to Source Resistance |
2mOhm |
| Rds On Max |
1.6 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF2804STRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
10 Weeks |
| Published |
2003 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6450pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 75A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.002Ohm |
| Pulsed Drain Current-Max (IDM) |
1080A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
540 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF2805LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
135A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
68 ns |
| Power Dissipation |
200W |
| Mount |
Through Hole |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Voltage - Rated DC |
55V |
| Current Rating |
135A |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
14 ns |
| Continuous Drain Current (ID) |
135A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5110pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Rise Time |
120ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
110 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.7m Ω @ 104A, 10V |
| Drain to Source Breakdown Voltage |
55V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF2807SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
82A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2002 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
3820pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 43A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.013Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| DS Breakdown Voltage-Min |
75V |
| Avalanche Energy Rating (Eas) |
340 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF2807ZSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
170W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Element Configuration |
Single |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
9.4mOhm |
| Voltage - Rated DC |
75V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
75A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
75A |
| Power Dissipation |
170W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.4m Ω @ 53A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
79ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain Current-Max (Abs) (ID) |
89A |
| Drain to Source Breakdown Voltage |
75V |
| Dual Supply Voltage |
75V |
| Nominal Vgs |
4 V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies IRF2903ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
290W Tc |
| Turn Off Delay Time |
48 ns |
| Turn On Delay Time |
24 ns |
| Factory Lead Time |
12 Weeks |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
290W |
| Case Connection |
DRAIN |
| Operating Temperature |
-55°C~175°C TJ |
| FET Type |
N-Channel |
| Drain Current-Max (Abs) (ID) |
260A |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6320pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
100ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 75A, 10V |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
820 mJ |
| Recovery Time |
51 ns |
| Nominal Vgs |
4 V |
| Height |
9.02mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF2903ZSTRLP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
290W Tc |
| Turn Off Delay Time |
48 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
16 Weeks |
| Published |
2005 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
2.4MOhm |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
100ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
290W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6320pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
1020A |
| Avalanche Energy Rating (Eas) |
820 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF2907ZSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Discontinued |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
270nC @ 10V |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |