Showing 1681–1692 of 7598 results
Infineon Technologies IRF3000PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
2.5W Ta |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Series |
HEXFET® |
| Published |
2004 |
| Packaging |
Tube |
| Min Operating Temperature |
-55°C |
| Operating Temperature |
-55°C~150°C TJ |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
1.6A Ta |
| Supplier Device Package |
8-SO |
| Number of Pins |
8 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Current Rating |
1.6A |
| Drain to Source Voltage (Vdss) |
300V |
| RoHS Status |
RoHS Compliant |
| Rds On Max |
400 mΩ |
| Input Capacitance |
730pF |
| Drain to Source Breakdown Voltage |
300V |
| Continuous Drain Current (ID) |
1.6A |
| Vgs (Max) |
±30V |
| Rise Time |
7.2ns |
| Voltage - Rated DC |
300V |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
730pF @ 25V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Rds On (Max) @ Id, Vgs |
400mOhm @ 960mA, 10V |
| FET Type |
N-Channel |
| Power Dissipation |
2.5W |
| Lead Free |
Lead Free |
Infineon Technologies IRF3007STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
62A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
120W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
3270pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.6m Ω @ 48A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Drain to Source Voltage (Vdss) |
75V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
62A |
| Drain-source On Resistance-Max |
0.0126Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
75V |
| Avalanche Energy Rating (Eas) |
946 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
Infineon Technologies IRF3205LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2002 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Factory Lead Time |
14 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
55V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
110A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
4V |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 62A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
| Rise Time |
101ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
65 ns |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.008Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
264 mJ |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF3205STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Resistance |
8MOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
110A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Termination |
SMD/SMT |
| Turn On Delay Time |
14 ns |
| JEDEC-95 Code |
TO-252 |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 62A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
110A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
| Rise Time |
101ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
65 ns |
| Turn-Off Delay Time |
50 ns |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Avalanche Energy Rating (Eas) |
264 mJ |
| Recovery Time |
104 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
10.54mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF3205ZSTRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
170W |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
170W Tc |
| Turn Off Delay Time |
45 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
6.5MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
55V |
| Current Rating |
75A |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3450pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
95ns |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
67 ns |
| Continuous Drain Current (ID) |
75A |
| FET Type |
N-Channel |
| Turn On Delay Time |
18 ns |
| Input Capacitance |
3.45nF |
| Drain to Source Resistance |
6.5mOhm |
| Rds On Max |
6.5 mΩ |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
6.5mOhm @ 66A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF3315PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
1998 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
94W Tc |
| Turn Off Delay Time |
49 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
14 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
82mOhm |
| Voltage - Rated DC |
150V |
| Current Rating |
27A |
| Element Configuration |
Single |
| Packaging |
Tube |
| Power Dissipation |
136W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Rise Time |
32ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
38 ns |
| Continuous Drain Current (ID) |
27A |
| Threshold Voltage |
4V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9.6 ns |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Dual Supply Voltage |
150V |
| Recovery Time |
260 ns |
| Nominal Vgs |
4 V |
| Height |
8.77mm |
| Length |
10.54mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF3315STRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
9.6 ns |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 94W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
49 ns |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
94W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Rise Time |
32ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
38 ns |
| Continuous Drain Current (ID) |
21A |
| Rds On (Max) @ Id, Vgs |
82mOhm @ 12A, 10V |
| FET Type |
N-Channel |
| Input Capacitance |
1.3nF |
| Drain to Source Resistance |
82mOhm |
| Rds On Max |
82 mΩ |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF3415S
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
43A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Terminal Form |
GULL WING |
| Published |
1998 |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 22A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Peak Reflow Temperature (Cel) |
225 |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
43A |
| Drain-source On Resistance-Max |
0.042Ohm |
| Pulsed Drain Current-Max (IDM) |
150A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
590 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF3415STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
3.8W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
4.2MOhm |
| Voltage - Rated DC |
150V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
43A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
3.8W Ta 200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
43A |
| Threshold Voltage |
4V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
43A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
55ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
69 ns |
| Turn-Off Delay Time |
71 ns |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Dual Supply Voltage |
150V |
| Avalanche Energy Rating (Eas) |
590 mJ |
| Recovery Time |
390 ns |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF3704SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
77A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
87W Tc |
| Turn Off Delay Time |
12 ns |
| Current Rating |
77A |
| Mount |
Surface Mount |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
90W |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
77A |
| Rds On (Max) @ Id, Vgs |
9mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1996pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
98ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
8.4 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
1.996nF |
| Drain to Source Resistance |
13.5mOhm |
| Rds On Max |
9 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF3704ZSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
67A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
57W Tc |
| Turn Off Delay Time |
11 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Element Configuration |
Single |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
7.9MOhm |
| Voltage - Rated DC |
20V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
67A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
67A |
| Power Dissipation |
57W |
| Turn On Delay Time |
8.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.9m Ω @ 21A, 10V |
| Vgs(th) (Max) @ Id |
2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1220pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 4.5V |
| Rise Time |
38ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.2 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
42A |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
260A |
| Recovery Time |
17 ns |
| Nominal Vgs |
2.1 V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies IRF3706LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
77A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 10V |
| Power Dissipation (Max) |
88W Tc |
| Turn Off Delay Time |
17 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Current Rating |
77A |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
8.5MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs (Max) |
±12V |
| Power Dissipation |
88W |
| Rds On (Max) @ Id, Vgs |
8.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2410pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 4.5V |
| Rise Time |
87ns |
| Drain to Source Voltage (Vdss) |
20V |
| Fall Time (Typ) |
4.8 ns |
| Continuous Drain Current (ID) |
77A |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
2.41nF |
| Drain to Source Resistance |
10.5mOhm |
| Rds On Max |
8.5 mΩ |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |