Showing 1693–1704 of 7598 results
Infineon Technologies IRF3706SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
77A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
88W Tc |
| Turn Off Delay Time |
17 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
8.5MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Current Rating |
77A |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
77A |
| Turn On Delay Time |
6.8 ns |
| Rds On (Max) @ Id, Vgs |
8.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2410pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 4.5V |
| Rise Time |
87ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
4.8 ns |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Power Dissipation |
88W |
| Dual Supply Voltage |
20V |
| Input Capacitance |
2.41nF |
| Drain to Source Resistance |
10.5mOhm |
| Rds On Max |
8.5 mΩ |
| Nominal Vgs |
2 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF3706STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
77A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 10V |
| Power Dissipation (Max) |
88W Tc |
| Min Operating Temperature |
-55°C |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Turn Off Delay Time |
17 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
4.8 ns |
| Rds On (Max) @ Id, Vgs |
8.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2410pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 4.5V |
| Rise Time |
87ns |
| Drain to Source Voltage (Vdss) |
20V |
| Power Dissipation |
88W |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
77A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
2.41nF |
| Drain to Source Resistance |
10.5mOhm |
| Rds On Max |
8.5 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF3707LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
62A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
87W Tc |
| Turn Off Delay Time |
11.8 ns |
| Current Rating |
62A |
| Mount |
Through Hole |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.3 ns |
| Rds On (Max) @ Id, Vgs |
12.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1990pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
30V |
| Power Dissipation |
87W |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
62A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
1.99nF |
| Drain to Source Resistance |
17mOhm |
| Rds On Max |
12.5 mΩ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF3707STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
87W |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
62A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
87W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
11.8 ns |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
3.3 ns |
| Continuous Drain Current (ID) |
62A |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1990pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Turn On Delay Time |
8.5 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
1.99nF |
| Drain to Source Resistance |
12.5mOhm |
| Rds On Max |
12.5 mΩ |
| Radiation Hardening |
No |
| Rds On (Max) @ Id, Vgs |
12.5mOhm @ 15A, 10V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF3707ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
57W Tc |
| Turn Off Delay Time |
12 ns |
| Operating Temperature |
-55°C~175°C TJ |
| FET Type |
N-Channel |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
9.5Ohm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Current Rating |
59A |
| Power Dissipation |
57W |
| Turn On Delay Time |
9.8 ns |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Dual Supply Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.25V @ 25μA |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Rise Time |
41ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.6 ns |
| Continuous Drain Current (ID) |
59A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
1.21nF |
| Recovery Time |
21 ns |
| Rds On (Max) @ Id, Vgs |
9.5mOhm @ 21A, 10V |
| Drain to Source Resistance |
12.5mOhm |
| Rds On Max |
9.5 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
8.763mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1210pF @ 15V |
| Lead Free |
Lead Free |
Infineon Technologies IRF3707ZSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
57W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET®, StrongIRFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
9.5mOhm |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Vgs(th) (Max) @ Id |
2.25V @ 25μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 21A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1210pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Peak Reflow Temperature (Cel) |
260 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
59A |
| Drain Current-Max (Abs) (ID) |
42A |
| Pulsed Drain Current-Max (IDM) |
230A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
40 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF3709PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
120W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 120W Tc |
| Turn Off Delay Time |
21 ns |
| Packaging |
Tube |
| Published |
2001 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
9Ohm |
| Voltage - Rated DC |
30V |
| Current Rating |
90A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2672pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 5V |
| Rise Time |
171ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.2 ns |
| Continuous Drain Current (ID) |
90A |
| Threshold Voltage |
3V |
| Turn On Delay Time |
11 ns |
| Case Connection |
DRAIN |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Nominal Vgs |
3 V |
| Height |
8.763mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF3710PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
Through Hole |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
12 ns |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
23MOhm |
| Voltage - Rated DC |
100V |
| Current Rating |
57A |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| Number of Terminations |
3 |
| FET Type |
N-Channel |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3130pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
57A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
58ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
47 ns |
| Turn-Off Delay Time |
45 ns |
| Continuous Drain Current (ID) |
57A |
| Threshold Voltage |
4V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 28A, 10V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
280 mJ |
| Recovery Time |
220 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
19.8mm |
| Length |
10.54mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF3710SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tube |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
52 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 28A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3130pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Reach Compliance Code |
not_compliant |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
57A |
| Drain-source On Resistance-Max |
0.023Ohm |
| Pulsed Drain Current-Max (IDM) |
180A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
280 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF3710ZSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Resistance |
18MOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
59A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
160W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
160W |
| Termination |
SMD/SMT |
| Turn On Delay Time |
17 ns |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
59A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
77ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
56 ns |
| Turn-Off Delay Time |
41 ns |
| Reverse Recovery Time |
50 ns |
| Continuous Drain Current (ID) |
59A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Recovery Time |
75 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF3711L
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
3.1W Ta 120W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2980pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF3711PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 120W Tc |
| Turn Off Delay Time |
17 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
120W |
| Mount |
Through Hole |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
6MOhm |
| Voltage - Rated DC |
20V |
| Current Rating |
110A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Packaging |
Tube |
| Case Connection |
DRAIN |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2980pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 4.5V |
| Rise Time |
220ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
3V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
440A |
| Dual Supply Voltage |
20V |
| Avalanche Energy Rating (Eas) |
460 mJ |
| Nominal Vgs |
3 V |
| Height |
8.763mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |