Showing 1705–1716 of 7598 results
Infineon Technologies IRF3711STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Voltage - Rated DC |
20V |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
3.1W Ta 120W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
6MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
110A |
| Rds On (Max) @ Id, Vgs |
6mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2980pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 4.5V |
| Rise Time |
220ns |
| Drain to Source Voltage (Vdss) |
20V |
| Power Dissipation |
120W |
| Current Rating |
110A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
2.98nF |
| Drain to Source Resistance |
8.5mOhm |
| Rds On Max |
6 mΩ |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF3711ZSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
92A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| FET Type |
N-Channel |
| Published |
2003 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
6mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Current Rating |
92A |
| Element Configuration |
Single |
| Power Dissipation |
79W |
| Turn On Delay Time |
12 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Dual Supply Voltage |
20V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 4.5V |
| Rise Time |
16ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.4 ns |
| Continuous Drain Current (ID) |
92A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
2.15nF |
| Recovery Time |
24 ns |
| Rds On (Max) @ Id, Vgs |
6mOhm @ 15A, 10V |
| Drain to Source Resistance |
7.3mOhm |
| Rds On Max |
6 mΩ |
| Nominal Vgs |
2 V |
| Height |
4.699mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
2150pF @ 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF3805L-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount, Through Hole |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
300W |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 140A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7820pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
130ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
52 ns |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF3805PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Power Dissipation |
130W |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3.3MOhm |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn Off Delay Time |
93 ns |
| Case Connection |
DRAIN |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7960pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
290nC @ 10V |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
78 ns |
| Continuous Drain Current (ID) |
75A |
| Turn On Delay Time |
150 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
890A |
| Avalanche Energy Rating (Eas) |
940 mJ |
| Height |
9.017mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF3805S-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Published |
2006 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
7820pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 140A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G6 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
160A |
| Drain-source On Resistance-Max |
0.0026Ohm |
| Pulsed Drain Current-Max (IDM) |
1000A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
680 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF3805SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
7960pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
290nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Pulsed Drain Current-Max (IDM) |
890A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
940 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF3805STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
DRAIN |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
3.3MOhm |
| Number of Terminations |
2 |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
75A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
300W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
130W |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
4V |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7960pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
75A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
290nC @ 10V |
| Rise Time |
20ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Forward Voltage |
1.3V |
| Fall Time (Typ) |
87 ns |
| Turn-Off Delay Time |
87 ns |
| FET Type |
N-Channel |
| Turn On Delay Time |
20 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
890A |
| Avalanche Energy Rating (Eas) |
940 mJ |
| Nominal Vgs |
4 V |
| Height |
4.699mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Contains Lead |
Infineon Technologies IRF3808PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2002 |
| Series |
HEXFET® |
| Part Status |
Active |
| FET Type |
N-Channel |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
7Ohm |
| Voltage - Rated DC |
75V |
| Current Rating |
140A |
| Number of Elements |
1 |
| Power Dissipation-Max |
330W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Transistor Application |
SWITCHING |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance (Ciss) (Max) @ Vds |
5310pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
140A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
| Rise Time |
140ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
120 ns |
| Turn-Off Delay Time |
68 ns |
| Continuous Drain Current (ID) |
140A |
| Threshold Voltage |
4V |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 82A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
550A |
| Dual Supply Voltage |
75V |
| Nominal Vgs |
4 V |
| Height |
16.51mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF3808STRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
106A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
68 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
14 Weeks |
| Published |
2007 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
120 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 82A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5310pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
| Rise Time |
140ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Continuous Drain Current (ID) |
106A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.007Ohm |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
550A |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF40H210
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
125W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Factory Lead Time |
12 Weeks |
| Resistance |
1.7mOhm |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.7m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5406pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
152nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF40R207
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
83W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1999 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Resistance |
5.1mOhm |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 55A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2110pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
56A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF4905PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
74A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
61 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| Power Dissipation |
200W |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
-55V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-74A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
18 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
99ns |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
96 ns |
| Continuous Drain Current (ID) |
-74A |
| Threshold Voltage |
-4V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
64A |
| Drain-source On Resistance-Max |
0.02Ohm |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
-55V |
| Pulsed Drain Current-Max (IDM) |
260A |
| Dual Supply Voltage |
-55V |
| Recovery Time |
130 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
-4 V |
| Height |
19.8mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
P-Channel |
| Lead Free |
Contains Lead, Lead Free |