Showing 1717–1728 of 7598 results
Infineon Technologies IRF520NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| Part Status |
Active |
| FET Type |
N-Channel |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
100V |
| Current Rating |
9.7A |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
48W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
48W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.5 ns |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
9.5A |
| Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
9.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
23ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
23 ns |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
9.7A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Recovery Time |
150 ns |
| Nominal Vgs |
4 V |
| Height |
15.24mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF520NSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
1995 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 48W Tc |
| Turn Off Delay Time |
32 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
12 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
9.7A |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
23 ns |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
23ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
9.7A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IRF5210PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
Through Hole |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
60mOhm |
| Voltage - Rated DC |
-100V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-40A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
-4V |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
40A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
86ns |
| Drain to Source Voltage (Vdss) |
100V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
81 ns |
| Turn-Off Delay Time |
79 ns |
| Continuous Drain Current (ID) |
-40A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
17 ns |
| Drain to Source Breakdown Voltage |
-100V |
| Dual Supply Voltage |
-100V |
| Avalanche Energy Rating (Eas) |
780 mJ |
| Recovery Time |
260 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
-4 V |
| Height |
19.8mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
Infineon Technologies IRF5210SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
1998 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 170W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2780pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 38A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
38A |
| Drain-source On Resistance-Max |
0.06Ohm |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
120 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF5210STRR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
1998 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
38A |
| Drain-source On Resistance-Max |
0.06Ohm |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
120 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF5305LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
P-Channel |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 110W Tc |
| Turn Off Delay Time |
39 ns |
| Packaging |
Tube |
| Published |
2003 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
60mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
110W |
| Turn On Delay Time |
14 ns |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance |
1.2nF |
| Drain to Source Resistance |
60mOhm |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Rise Time |
66ns |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
63 ns |
| Continuous Drain Current (ID) |
-31A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-55V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Rds On (Max) @ Id, Vgs |
60mOhm @ 16A, 10V |
| Rds On Max |
60 mΩ |
| Nominal Vgs |
-4 V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 25V |
| Lead Free |
Lead Free |
Infineon Technologies IRF540NLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
130W Tc |
| Turn Off Delay Time |
39 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
44MOhm |
| Voltage - Rated DC |
100V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
33A |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
33A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
44m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1960pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
71nC @ 10V |
| Rise Time |
35ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Nominal Vgs |
4 V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
130W |
| Lead Free |
Lead Free |
Infineon Technologies IRF540NSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
130W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
1960pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
71nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
44m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
33A |
| Drain-source On Resistance-Max |
0.044Ohm |
| Pulsed Drain Current-Max (IDM) |
110A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
185 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF540ZSTRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
92W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
1770pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
26.5m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
36A |
| Drain-source On Resistance-Max |
0.0265Ohm |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
120 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF5800TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
6 |
| Supplier Device Package |
Micro6™(TSOP-6) |
| Current - Continuous Drain (Id) @ 25℃ |
4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Power Dissipation |
2W |
| Turn Off Delay Time |
24 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
P-Channel |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
535pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
-4A |
| Threshold Voltage |
-1V |
| Drain to Source Breakdown Voltage |
-30V |
| Dual Supply Voltage |
-30V |
| Turn On Delay Time |
11.4 ns |
| Input Capacitance |
535pF |
| Drain to Source Resistance |
85mOhm |
| Rds On Max |
85 mΩ |
| Nominal Vgs |
-1 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
85mOhm @ 4A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF5802TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Power Dissipation |
2W |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
6 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
1.2Ohm |
| Voltage - Rated DC |
150V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
900mA |
| Number of Elements |
1 |
| Power Dissipation-Max |
2W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Turn On Delay Time |
6 ns |
| Threshold Voltage |
5.5V |
| Gate to Source Voltage (Vgs) |
30V |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 540mA, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
88pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
900mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
6.8nC @ 10V |
| Rise Time |
1.6ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
9.2 ns |
| Turn-Off Delay Time |
7.5 ns |
| Continuous Drain Current (ID) |
900mA |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain Current-Max (Abs) (ID) |
0.9A |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
7A |
| Dual Supply Voltage |
150V |
| Avalanche Energy Rating (Eas) |
9.5 mJ |
| Nominal Vgs |
5.5 V |
| Height |
900μm |
| Length |
2.9972mm |
| Width |
1.4986mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IRF5803TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
6 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Turn On Delay Time |
43 ns |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
112MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-40V |
| Current Rating |
-3.4A |
| Configuration |
Single |
| Number of Channels |
1 |
| Power Dissipation-Max |
2W Ta |
| Power Dissipation |
2W |
| Part Status |
Active |
| FET Type |
P-Channel |
| Continuous Drain Current (ID) |
-3.4A |
| Threshold Voltage |
-3V |
| Input Capacitance (Ciss) (Max) @ Vds |
1110pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
3.4A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
| Rise Time |
550ns |
| Drain to Source Voltage (Vdss) |
40V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
50 ns |
| Turn-Off Delay Time |
88 ns |
| Rds On (Max) @ Id, Vgs |
112m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-40V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.45mm |
| Length |
3.1mm |
| Width |
1.4986mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |