Showing 1729–1740 of 7598 results
Infineon Technologies IRF5806TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
6 |
| Current - Continuous Drain (Id) @ 25℃ |
4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
94 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
86MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
4A |
| Rds On (Max) @ Id, Vgs |
86m Ω @ 4A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
594pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
11.4nC @ 4.5V |
| Rise Time |
27ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
126 ns |
| Continuous Drain Current (ID) |
-4A |
| Threshold Voltage |
-1.2V |
| Turn On Delay Time |
6.2 ns |
| Power Dissipation |
2W |
| Drain to Source Breakdown Voltage |
-20V |
| Dual Supply Voltage |
-20V |
| Nominal Vgs |
-1.2 V |
| Height |
1mm |
| Length |
3.1mm |
| Width |
1.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
P-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF6215LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 110W Tc |
| Turn Off Delay Time |
53 ns |
| FET Type |
P-Channel |
| Mount |
Through Hole |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
110W |
| Turn On Delay Time |
14 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Rds On (Max) @ Id, Vgs |
290mOhm @ 6.6A, 10V |
| Drain to Source Breakdown Voltage |
-150V |
| Input Capacitance |
860pF |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
36ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
-13A |
| Threshold Voltage |
-4V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Drain to Source Resistance |
290mOhm |
| Rds On Max |
290 mΩ |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6215PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Turn On Delay Time |
14 ns |
| Factory Lead Time |
14 Weeks |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
290mOhm |
| Voltage - Rated DC |
-150V |
| Current Rating |
-13A |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
110W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
P-Channel |
| Threshold Voltage |
-4V |
| JEDEC-95 Code |
TO-220AB |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
13A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
36ns |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Turn-Off Delay Time |
53 ns |
| Continuous Drain Current (ID) |
-13A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 6.6A, 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-150V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Dual Supply Voltage |
-150V |
| Recovery Time |
240 ns |
| Nominal Vgs |
-4 V |
| Height |
15.24mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6215STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
2 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
290mOhm |
| Voltage - Rated DC |
-150V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-13A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
3.8W Ta 110W Tc |
| Element Configuration |
Single |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
110W |
| Turn-Off Delay Time |
53 ns |
| Continuous Drain Current (ID) |
-13A |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
13A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
36ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| Threshold Voltage |
-4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-150V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Dual Supply Voltage |
150V |
| Nominal Vgs |
-4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF6215STRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 6.6A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Reach Compliance Code |
not_compliant |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
13A |
| Drain-source On Resistance-Max |
0.29Ohm |
| Pulsed Drain Current-Max (IDM) |
44A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
310 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF6218PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
27A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Power Dissipation |
250W |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2003 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
-150V |
| Current Rating |
-27A |
| Element Configuration |
Single |
| Turn Off Delay Time |
35 ns |
| Turn On Delay Time |
21 ns |
| Drain to Source Breakdown Voltage |
-150V |
| Dual Supply Voltage |
-150V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2210pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
70ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
-27A |
| Threshold Voltage |
-5V |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
150mOhm @ 16A, 10V |
| Input Capacitance |
2.21nF |
| Drain to Source Resistance |
150mOhm |
| Rds On Max |
150 mΩ |
| Nominal Vgs |
-5 V |
| Height |
15.24mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6218SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
27A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Turn Off Delay Time |
35 ns |
| Packaging |
Tube |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Published |
2004 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
2210pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
250W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Rise Time |
70ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
-150A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
27A |
| Radiation Hardening |
No |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF6218STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
21 ns |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
250W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
250W |
| Case Connection |
DRAIN |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Continuous Drain Current (ID) |
-150A |
| Threshold Voltage |
-5V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
27A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
70ns |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Turn-Off Delay Time |
35 ns |
| Transistor Application |
SWITCHING |
| FET Type |
P-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
27A |
| Drain to Source Breakdown Voltage |
-150V |
| Nominal Vgs |
-5 V |
| Height |
4.572mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 16A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF630NS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
82W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
225 |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
575pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 5.4A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
9.3A |
| Drain-source On Resistance-Max |
0.3Ohm |
| Pulsed Drain Current-Max (IDM) |
37A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
94 mJ |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF630NSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
82W Tc |
| Turn Off Delay Time |
27 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| JESD-30 Code |
R-PSSO-G2 |
| Contact Plating |
Tin |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
300mOhm |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
9.3A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Published |
1997 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
9.3A |
| Threshold Voltage |
4V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 5.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
575pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
82W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Avalanche Energy Rating (Eas) |
94 mJ |
| Recovery Time |
176 ns |
| Nominal Vgs |
4 V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF630NSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
300mOhm |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
9.3A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
82W Tc |
| Element Configuration |
Single |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
82W |
| Fall Time (Typ) |
15 ns |
| Turn-Off Delay Time |
27 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 5.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
575pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
9.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
14ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.9 ns |
| Continuous Drain Current (ID) |
9.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Avalanche Energy Rating (Eas) |
94 mJ |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF6604TR1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MQ |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MQ |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 49A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 7V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.3W Ta 42W Tc |
| Power Dissipation |
2.3W |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Resistance |
11.5mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Turn Off Delay Time |
18 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Input Capacitance (Ciss) (Max) @ Vds |
2270pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Reverse Recovery Time |
31 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
2.1V |
| Gate to Source Voltage (Vgs) |
12V |
| Rds On (Max) @ Id, Vgs |
11.5mOhm @ 12A, 7V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
| Input Capacitance |
2.27nF |
| Drain to Source Resistance |
11.5Ohm |
| Rds On Max |
11.5 mΩ |
| Nominal Vgs |
2.1 V |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |