Showing 1741–1752 of 7598 results
Infineon Technologies IRF6608TR1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Package / Case |
DirectFET™ Isometric ST |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta 55A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.1W Ta 42W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2120pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF6609TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MT |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta 89W Tc |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Current Rating |
31A |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
20V |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Rise Time |
95ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
89W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 31A, 10V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6290pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 4.5V |
| JESD-30 Code |
R-XBCC-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
9.8 ns |
| Continuous Drain Current (ID) |
150mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.002Ohm |
| Drain to Source Breakdown Voltage |
20V |
| Avalanche Energy Rating (Eas) |
240 mJ |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6610TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SQ |
| Number of Pins |
5 |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 66A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
20V |
| Current Rating |
15A |
| Power Dissipation |
42W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.8m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1520pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6611TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.9W Ta 89W Tc |
| Turn Off Delay Time |
24 ns |
| Operating Temperature |
-40°C~150°C TJ |
| JESD-30 Code |
R-XBCC-N3 |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
32A |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Packaging |
Tape & Reel (TR) |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
6.5 ns |
| Continuous Drain Current (ID) |
22A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 27A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4860pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 4.5V |
| Rise Time |
57ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
89W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0026Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
220A |
| Avalanche Energy Rating (Eas) |
310 mJ |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6612TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
24A Ta 136A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
21 ns |
| Power Dissipation |
89W |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
3.3MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
30V |
| Current Rating |
24A |
| Operating Temperature |
-40°C~150°C TJ |
| Turn On Delay Time |
15 ns |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
3.97nF |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3970pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 4.5V |
| Rise Time |
52ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.8 ns |
| Continuous Drain Current (ID) |
19A |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3mOhm @ 24A, 10V |
| Drain to Source Resistance |
4.4mOhm |
| Rds On Max |
3.3 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6613TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MT |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MT |
| Current - Continuous Drain (Id) @ 25℃ |
23A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
27 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Turn On Delay Time |
18 ns |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
3.4MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
40V |
| Current Rating |
23A |
| Power Dissipation |
89W |
| Packaging |
Tape & Reel (TR) |
| FET Type |
N-Channel |
| Dual Supply Voltage |
40V |
| Input Capacitance |
5.95nF |
| Input Capacitance (Ciss) (Max) @ Vds |
5950pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 4.5V |
| Rise Time |
47ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.9 ns |
| Continuous Drain Current (ID) |
18A |
| Threshold Voltage |
1.35V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Rds On (Max) @ Id, Vgs |
3.4mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Recovery Time |
57 ns |
| Drain to Source Resistance |
4.1mOhm |
| Rds On Max |
3.4 mΩ |
| Nominal Vgs |
1.35 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6614TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric ST |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ ST |
| Current - Continuous Drain (Id) @ 25℃ |
12.7A Ta 55A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 42W Tc |
| Turn Off Delay Time |
18 ns |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Power Dissipation |
2.1W |
| Turn On Delay Time |
13 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Rds On (Max) @ Id, Vgs |
8.3mOhm @ 12.7A, 10V |
| Dual Supply Voltage |
40V |
| Input Capacitance |
2.56nF |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Rise Time |
27ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.6 ns |
| Continuous Drain Current (ID) |
10.1A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2560pF @ 20V |
| Recovery Time |
23 ns |
| Drain to Source Resistance |
9.9mOhm |
| Rds On Max |
8.3 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
508μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF6614TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric ST |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12.7A Ta 55A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 42W Tc |
| Turn Off Delay Time |
18 ns |
| Current Rating |
12.7A |
| Factory Lead Time |
12 Weeks |
| Published |
2006 |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
8.3MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
40V |
| Terminal Position |
BOTTOM |
| Operating Temperature |
-40°C~150°C TJ |
| JESD-30 Code |
R-XBCC-N3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.6 ns |
| Power Dissipation |
42W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.3m Ω @ 12.7A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2560pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Rise Time |
27ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
10.1A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
22 mJ |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6616TR1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
2.8W |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
19A Ta 106A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
21 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
30V |
| Current Rating |
19A |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance (Ciss) (Max) @ Vds |
3765pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 4.5V |
| Rise Time |
19ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.4 ns |
| Reverse Recovery Time |
15 ns |
| Continuous Drain Current (ID) |
19A |
| Rds On (Max) @ Id, Vgs |
5mOhm @ 19A, 10V |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
40V |
| Dual Supply Voltage |
40V |
| Input Capacitance |
3.765nF |
| Drain to Source Resistance |
3.7mOhm |
| Rds On Max |
5 mΩ |
| Nominal Vgs |
1.8 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
Non-RoHS Compliant |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Lead Free |
Lead Free |
Infineon Technologies IRF6618
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Cut Tape (CT) |
| Package / Case |
DirectFET™ Isometric MT |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta 170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.75 |
| Terminal Position |
BOTTOM |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
2.35V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5640pF @ 15V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 30A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-XBCC-N3 |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.0022Ohm |
| Pulsed Drain Current-Max (IDM) |
240A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
210 mJ |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF6618TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MT |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MT |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta 170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
27 ns |
| Power Dissipation |
89W |
| Mount |
Surface Mount |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
2.2MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
30V |
| Current Rating |
30A |
| Operating Temperature |
-40°C~150°C TJ |
| Turn On Delay Time |
21 ns |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
5.64nF |
| Vgs(th) (Max) @ Id |
2.35V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5640pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 4.5V |
| Rise Time |
71ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.1 ns |
| Continuous Drain Current (ID) |
23A |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.2mOhm @ 30A, 10V |
| Drain to Source Resistance |
3.4mOhm |
| Rds On Max |
2.2 mΩ |
| Nominal Vgs |
1.64 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6618TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MT |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta 170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
27 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2007 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.2MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
30V |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
30A |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
8.1 ns |
| Continuous Drain Current (ID) |
170mA |
| Power Dissipation |
89W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5640pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 4.5V |
| Rise Time |
71ns |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-XBCC-N3 |
| Threshold Voltage |
1.64V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
29A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Height |
508μm |
| Length |
6.35mm |
| Width |
5.0546mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |