Showing 1753–1764 of 7598 results
Infineon Technologies IRF6619TR1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Current Rating |
30A |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
20V |
| Turn Off Delay Time |
25 ns |
| Power Dissipation |
2.8W |
| Continuous Drain Current (ID) |
24A |
| Threshold Voltage |
2.45V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5040pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 4.5V |
| Rise Time |
71ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.3 ns |
| Reverse Recovery Time |
29 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.2mOhm @ 30A, 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Dual Supply Voltage |
20V |
| Input Capacitance |
5.04nF |
| Drain to Source Resistance |
1.65Ohm |
| Rds On Max |
2.2 mΩ |
| Nominal Vgs |
2.45 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6619TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
25 ns |
| Turn On Delay Time |
21 ns |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
20V |
| Current Rating |
30A |
| Power Dissipation |
89W |
| Operating Temperature |
-40°C~150°C TJ |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
20V |
| Dual Supply Voltage |
20V |
| Input Capacitance (Ciss) (Max) @ Vds |
5040pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 4.5V |
| Rise Time |
71ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.3 ns |
| Continuous Drain Current (ID) |
24A |
| Threshold Voltage |
1.55V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
2.2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Input Capacitance |
5.04nF |
| Drain to Source Resistance |
3mOhm |
| Rds On Max |
2.2 mΩ |
| Nominal Vgs |
1.55 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6620TR1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
27A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Turn On Delay Time |
18 ns |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Resistance |
2.7mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
20V |
| Current Rating |
27A |
| Power Dissipation |
2.8W |
| Packaging |
Tape & Reel (TR) |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance (Ciss) (Max) @ Vds |
4130pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 4.5V |
| Rise Time |
80ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.6 ns |
| Reverse Recovery Time |
23 ns |
| Continuous Drain Current (ID) |
22A |
| Threshold Voltage |
2.45V |
| Rds On (Max) @ Id, Vgs |
2.7mOhm @ 27A, 10V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Dual Supply Voltage |
20V |
| Input Capacitance |
4.13nF |
| Drain to Source Resistance |
2.1Ohm |
| Rds On Max |
2.7 mΩ |
| Nominal Vgs |
2.45 V |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6622TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SQ |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 34W Tc |
| Turn Off Delay Time |
13 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
25V |
| Terminal Position |
BOTTOM |
| Current Rating |
15A |
| JESD-30 Code |
R-XBCC-N3 |
| Operating Temperature |
-40°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
12A |
| Turn On Delay Time |
9.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.3m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1450pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
34W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0063Ohm |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
13 mJ |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6623TR1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
DirectFET™ Isometric ST |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ ST |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta 55A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.4W Ta 42W Tc |
| Turn Off Delay Time |
12 ns |
| Power Dissipation |
2.1W |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Resistance |
5.7mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
20V |
| Current Rating |
16A |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
5.7mOhm @ 15A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1360pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Rise Time |
40ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Reverse Recovery Time |
20 ns |
| Continuous Drain Current (ID) |
55A |
| Threshold Voltage |
2.2V |
| Drain to Source Breakdown Voltage |
20V |
| Dual Supply Voltage |
20V |
| FET Type |
N-Channel |
| Input Capacitance |
1.36nF |
| Drain to Source Resistance |
4.4Ohm |
| Rds On Max |
5.7 mΩ |
| Nominal Vgs |
2.2 V |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
Non-RoHS Compliant |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Lead Free |
Lead Free |
Infineon Technologies IRF6626
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Package / Case |
DirectFET™ Isometric ST |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta 72A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Position |
BOTTOM |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
2.35V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2380pF @ 15V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.4m Ω @ 16A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-XBCC-N3 |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
16A |
| Drain-source On Resistance-Max |
0.0054Ohm |
| Pulsed Drain Current-Max (IDM) |
130A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
24 mJ |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF6626TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric ST |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ ST |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta 72A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Turn Off Delay Time |
17 ns |
| Power Dissipation |
42W |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Resistance |
5.4MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
30V |
| Current Rating |
16A |
| Operating Temperature |
-40°C~150°C TJ |
| Turn On Delay Time |
13 ns |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
2.38nF |
| Vgs(th) (Max) @ Id |
2.35V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2380pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.5 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.4mOhm @ 16A, 10V |
| Drain to Source Resistance |
7.1mOhm |
| Rds On Max |
5.4 mΩ |
| Nominal Vgs |
2.35 V |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6629TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
20 ns |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
29A Ta 180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.8W Ta 100W Tc |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2006 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
2.1MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
25V |
| Current Rating |
29A |
| Power Dissipation |
100W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
25V |
| Dual Supply Voltage |
25V |
| Input Capacitance (Ciss) (Max) @ Vds |
4260pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 4.5V |
| Rise Time |
67ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7.4 ns |
| Continuous Drain Current (ID) |
23A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
2.1mOhm @ 29A, 10V |
| FET Type |
N-Channel |
| Input Capacitance |
4.26nF |
| Drain to Source Resistance |
2.7mOhm |
| Rds On Max |
2.1 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
506μm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Lead Free |
Lead Free |
Infineon Technologies IRF6631TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SQ |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta 57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Turn Off Delay Time |
18 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
30V |
| Terminal Position |
BOTTOM |
| Current Rating |
13A |
| JESD-30 Code |
R-XBCC-N3 |
| Packaging |
Tape & Reel (TR) |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
10A |
| Threshold Voltage |
1.8V |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.8m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1450pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
| Rise Time |
18ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.9 ns |
| Power Dissipation |
42W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0078Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
1.8 V |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6633TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
9.7 ns |
| Package / Case |
DirectFET™ Isometric MP |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MP |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta 59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.3W Ta 89W Tc |
| Turn Off Delay Time |
12 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
5.6MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
20V |
| Current Rating |
16A |
| Power Dissipation |
89W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
1.25nF |
| Input Capacitance (Ciss) (Max) @ Vds |
1250pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Rise Time |
31ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.3 ns |
| Continuous Drain Current (ID) |
13A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
5.6mOhm @ 16A, 10V |
| FET Type |
N-Channel |
| Drain to Source Resistance |
9.4mOhm |
| Rds On Max |
5.6 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
676μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Lead Free |
Lead Free |
Infineon Technologies IRF6637TR1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MP |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MP |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta 59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.3W Ta 42W Tc |
| Turn Off Delay Time |
14 ns |
| Current Rating |
14A |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
30V |
| Operating Temperature |
-40°C~150°C TJ |
| Power Dissipation |
2.3W |
| Continuous Drain Current (ID) |
14A |
| Threshold Voltage |
1.8V |
| Vgs(th) (Max) @ Id |
2.35V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1330pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.8 ns |
| Reverse Recovery Time |
13 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.7mOhm @ 14A, 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Input Capacitance |
1.33nF |
| Rds On Max |
7.7 mΩ |
| Nominal Vgs |
1.8 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6641TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2007 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MZ |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MZ |
| Current - Continuous Drain (Id) @ 25℃ |
4.6A Ta 26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
31 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Turn On Delay Time |
16 ns |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
200V |
| Current Rating |
4.6A |
| Element Configuration |
Single |
| Power Dissipation |
89W |
| Packaging |
Cut Tape (CT) |
| FET Type |
N-Channel |
| Dual Supply Voltage |
200V |
| Input Capacitance |
2.29nF |
| Input Capacitance (Ciss) (Max) @ Vds |
2290pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.5 ns |
| Continuous Drain Current (ID) |
3.7A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Rds On (Max) @ Id, Vgs |
59.9mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4.9V @ 150μA |
| Recovery Time |
130 ns |
| Drain to Source Resistance |
59.9mOhm |
| Rds On Max |
59.9 mΩ |
| Nominal Vgs |
4 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |