Showing 1765–1776 of 7598 results
Infineon Technologies IRF6645TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SJ |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ SJ |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Ta 25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Turn Off Delay Time |
18 ns |
| Power Dissipation |
42W |
| Contact Plating |
Copper, Silver, Tin |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
35MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
100V |
| Current Rating |
5.7A |
| Element Configuration |
Single |
| Operating Temperature |
-40°C~150°C TJ |
| Turn On Delay Time |
9.2 ns |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Vgs(th) (Max) @ Id |
4.9V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
890pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.1 ns |
| Continuous Drain Current (ID) |
4.5A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
35mOhm @ 5.7A, 10V |
| Input Capacitance |
890pF |
| Recovery Time |
47 ns |
| Drain to Source Resistance |
28mOhm |
| Rds On Max |
35 mΩ |
| Nominal Vgs |
3 V |
| Height |
530μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6646TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
17 ns |
| Package / Case |
DirectFET™ Isometric MN |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MN |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 68A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
31 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2005 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
9.5MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
80V |
| Current Rating |
12A |
| Element Configuration |
Single |
| Power Dissipation |
89W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Dual Supply Voltage |
80V |
| Input Capacitance |
2.06nF |
| Input Capacitance (Ciss) (Max) @ Vds |
2060pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
9.6A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Rds On (Max) @ Id, Vgs |
9.5mOhm @ 12A, 10V |
| FET Type |
N-Channel |
| Recovery Time |
54 ns |
| Drain to Source Resistance |
7.6mOhm |
| Rds On Max |
9.5 mΩ |
| Nominal Vgs |
3 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Vgs(th) (Max) @ Id |
4.9V @ 150μA |
| Lead Free |
Lead Free |
Infineon Technologies IRF6655TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-XBCC-N2 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SH |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.2A Ta 19A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Turn Off Delay Time |
14 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
100V |
| Terminal Position |
BOTTOM |
| Current Rating |
4.2A |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Fall Time (Typ) |
4.3 ns |
| Continuous Drain Current (ID) |
4.2mA |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
62m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4.8V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
530pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11.7nC @ 10V |
| Rise Time |
2.8ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.062Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
34A |
| Avalanche Energy Rating (Eas) |
11 mJ |
| Height |
508μm |
| Length |
4.826mm |
| Width |
3.9624mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
42W |
| Lead Free |
Lead Free |
Infineon Technologies IRF6662TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
8.3A |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MZ |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta 47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
24 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
31MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
100V |
| Terminal Position |
BOTTOM |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.9 ns |
| Power Dissipation |
89W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 8.2A, 10V |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
7.5ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-XBCC-N3 |
| Continuous Drain Current (ID) |
6.6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
66A |
| Avalanche Energy Rating (Eas) |
39 mJ |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IRF6665TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SH |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Power Dissipation |
42W |
| Part Status |
Active |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Voltage - Rated DC |
100V |
| Terminal Position |
BOTTOM |
| Current Rating |
4.2A |
| JESD-30 Code |
R-XBCC-N2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.2W Ta 42W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Turn-Off Delay Time |
14 ns |
| Turn On Delay Time |
7.4 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
62m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
530pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
4.2A Ta 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Rise Time |
2.8ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.3 ns |
| Continuous Drain Current (ID) |
3.4A |
| Threshold Voltage |
5V |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.062Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Nominal Vgs |
5 V |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF6674TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MZ |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MZ |
| Current - Continuous Drain (Id) @ 25℃ |
13.4A Ta 67A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 89W Tc |
| Turn Off Delay Time |
12 ns |
| Turn On Delay Time |
7 ns |
| Mount |
Surface Mount |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Element Configuration |
Dual |
| Power Dissipation |
3.6W |
| Operating Temperature |
-40°C~150°C TJ |
| FET Type |
N-Channel |
| Dual Supply Voltage |
60V |
| Input Capacitance |
1.35nF |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.7 ns |
| Continuous Drain Current (ID) |
13.4A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Rds On (Max) @ Id, Vgs |
11mOhm @ 13.4A, 10V |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Recovery Time |
48 ns |
| Drain to Source Resistance |
9mOhm |
| Rds On Max |
11 mΩ |
| Nominal Vgs |
4 V |
| Height |
533.4μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF6674TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MZ |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13.4A Ta 67A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 89W Tc |
| Turn Off Delay Time |
12 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
R-XBCC-N3 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
8.7 ns |
| Power Dissipation |
89W |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 13.4A, 10V |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
67A |
| Threshold Voltage |
4V |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
98 mJ |
| Nominal Vgs |
4 V |
| Height |
530μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Case Connection |
DRAIN |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF6678
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
30A |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
27 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 4.5V |
| Rise Time |
71ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.8W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5640pF @ 15V |
| JESD-30 Code |
R-XBCC-N3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.1 ns |
| Continuous Drain Current (ID) |
24A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0022Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
210 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
Infineon Technologies IRF6678TR1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
2.8W |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
27 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
30V |
| Current Rating |
30A |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Threshold Voltage |
2.25V |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance (Ciss) (Max) @ Vds |
5640pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 4.5V |
| Rise Time |
71ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.1 ns |
| Reverse Recovery Time |
43 ns |
| Continuous Drain Current (ID) |
30A |
| Rds On (Max) @ Id, Vgs |
2.2mOhm @ 30A, 10V |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Input Capacitance |
5.64nF |
| Drain to Source Resistance |
1.7Ohm |
| Rds On Max |
2.2 mΩ |
| Nominal Vgs |
2.25 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
Non-RoHS Compliant |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Lead Free |
Lead Free |
Infineon Technologies IRF6709S2TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric S1 |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET S1 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 39A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta 21W Tc |
| Turn Off Delay Time |
9.1 ns |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
7.8MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
1.8W |
| Turn On Delay Time |
8.4 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Rds On (Max) @ Id, Vgs |
7.8mOhm @ 12A, 10V |
| Dual Supply Voltage |
25V |
| Input Capacitance |
1.01nF |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.5 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
25V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1010pF @ 13V |
| Recovery Time |
23 ns |
| Drain to Source Resistance |
13.5mOhm |
| Rds On Max |
7.8 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
558.8μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6710S2TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric S1 |
| Number of Pins |
6 |
| Supplier Device Package |
DIRECTFET S1 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 37A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta 15W Tc |
| Turn Off Delay Time |
5.2 ns |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Resistance |
5.9MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
1.8W |
| Turn On Delay Time |
7.9 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Rds On (Max) @ Id, Vgs |
5.9mOhm @ 12A, 10V |
| Dual Supply Voltage |
25V |
| Input Capacitance |
1.19nF |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 4.5V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
25V |
| Vgs(th) (Max) @ Id |
2.4V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1190pF @ 13V |
| Recovery Time |
21 ns |
| Drain to Source Resistance |
11.9mOhm |
| Rds On Max |
5.9 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
558.8μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6711STR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Package / Case |
DirectFET™ Isometric SQ |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ SQ |
| Current - Continuous Drain (Id) @ 25℃ |
19A Ta 84A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
7.1 ns |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Power Dissipation |
42W |
| Turn On Delay Time |
7.7 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
25V |
| Input Capacitance |
1.81nF |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 4.5V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.4 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Rds On (Max) @ Id, Vgs |
3.8mOhm @ 19A, 10V |
| Drain to Source Resistance |
6.5mOhm |
| Rds On Max |
3.8 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Input Capacitance (Ciss) (Max) @ Vds |
1810pF @ 13V |
| RoHS Status |
RoHS Compliant |