Showing 1777–1788 of 7598 results
Infineon Technologies IRF6711STRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SQ |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Ta 84A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Factory Lead Time |
26 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
R-XBCC-N4 |
| Turn Off Delay Time |
7.1 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
5.4 ns |
| Continuous Drain Current (ID) |
19A |
| Turn On Delay Time |
7.7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1810pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 4.5V |
| Rise Time |
13ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
42W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
84A |
| Drain-source On Resistance-Max |
0.0038Ohm |
| Drain to Source Breakdown Voltage |
25V |
| Avalanche Energy Rating (Eas) |
62 mJ |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF6712STRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
BOTTOM |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SQ |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Ta 68A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 36W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
14 ns |
| Published |
2009 |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
4.9MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
36W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.9m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1570pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-XBCC-N2 |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
25V |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IRF6713STR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SQ |
| Number of Pins |
6 |
| Supplier Device Package |
DIRECTFET™ SQ |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta 95A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Turn Off Delay Time |
9.2 ns |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
3MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Power Dissipation |
2.2W |
| Turn On Delay Time |
12 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Rds On (Max) @ Id, Vgs |
3mOhm @ 22A, 10V |
| Dual Supply Voltage |
25V |
| Input Capacitance |
2.88nF |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 4.5V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
22A |
| Threshold Voltage |
1.9V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
25V |
| Vgs(th) (Max) @ Id |
2.4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2880pF @ 13V |
| Recovery Time |
30 ns |
| Drain to Source Resistance |
4.6mOhm |
| Rds On Max |
3 mΩ |
| Nominal Vgs |
1.9 V |
| Height |
508μm |
| Length |
3.95mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6714MTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
29A Ta 166A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
13 ns |
| JESD-30 Code |
R-XBCC-N3 |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.1MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Position |
BOTTOM |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.1m Ω @ 29A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3890pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 4.5V |
| Rise Time |
26ns |
| Fall Time (Typ) |
9.6 ns |
| Continuous Drain Current (ID) |
29mA |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
29A |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
234A |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
89W |
| Lead Free |
Lead Free |
Infineon Technologies IRF6716MTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
39A Ta 180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 78W Tc |
| Turn Off Delay Time |
25 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
R-XBCC-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
1.9V |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5150pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
59nC @ 4.5V |
| Rise Time |
105ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
41 ns |
| Continuous Drain Current (ID) |
39A |
| Case Connection |
DRAIN |
| Power Dissipation |
78W |
| Drain Current-Max (Abs) (ID) |
180A |
| Drain-source On Resistance-Max |
0.0016Ohm |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
330 mJ |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
26 ns |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF6721STRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric SQ |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta 60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| JESD-30 Code |
R-XBCC-N2 |
| Factory Lead Time |
10 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Position |
BOTTOM |
| Turn Off Delay Time |
9.3 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.3 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.3m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1430pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Rise Time |
8.9ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
42W |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0073Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
62 mJ |
| Height |
506μm |
| Length |
4.826mm |
| Width |
3.95mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF6724MTR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Current - Continuous Drain (Id) @ 25℃ |
27A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 27A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4404pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
Infineon Technologies IRF6725MTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Ta 170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 100W Tc |
| Turn Off Delay Time |
19 ns |
| Power Dissipation |
100W |
| Factory Lead Time |
17 Weeks |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
R-XBCC-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-40°C~150°C TJ |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
28A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 28A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 4.5V |
| Rise Time |
22ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
170A |
| Threshold Voltage |
1.8V |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Drain-source On Resistance-Max |
0.0022Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
220A |
| Avalanche Energy Rating (Eas) |
190 mJ |
| Nominal Vgs |
1.8 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF6726MTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2007 |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MT |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Ta 180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-XBCC-N3 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
180A |
| Power Dissipation |
89W |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.7m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6140pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
77nC @ 4.5V |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
32A |
| Operating Mode |
ENHANCEMENT MODE |
| Drain-source On Resistance-Max |
0.0017Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
260 mJ |
| Nominal Vgs |
1.7 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies IRF6728MTR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
23A Ta 140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 75W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
19 ns |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Power Dissipation |
75W |
| Turn On Delay Time |
16 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
4.11nF |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 4.5V |
| Rise Time |
34ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
140A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Rds On (Max) @ Id, Vgs |
2.5mOhm @ 23A, 10V |
| Drain to Source Resistance |
3.6mOhm |
| Rds On Max |
2.5 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
530μm |
| Length |
5.45mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Input Capacitance (Ciss) (Max) @ Vds |
4110pF @ 15V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF6728MTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Ta 140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 75W Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
R-XBCC-N3 |
| Turn Off Delay Time |
19 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4110pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 4.5V |
| Rise Time |
34ns |
| Power Dissipation |
75W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
23A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0025Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
180A |
| Avalanche Energy Rating (Eas) |
230 mJ |
| Nominal Vgs |
1.8 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF6794MTR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
32A Ta 200A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.8W Ta 100W Tc |
| Turn Off Delay Time |
9.7 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Operating Temperature |
-40°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Resistance |
1.3mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Power Dissipation |
100W |
| Turn On Delay Time |
15 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance |
4.42nF |
| FET Feature |
Schottky Diode (Body) |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 4.5V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.6 ns |
| Continuous Drain Current (ID) |
32A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
25V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Rds On (Max) @ Id, Vgs |
1.7mOhm @ 32A, 10V |
| Drain to Source Resistance |
3mOhm |
| Rds On Max |
1.7 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Input Capacitance (Ciss) (Max) @ Vds |
4420pF @ 13V |
| RoHS Status |
RoHS Compliant |