Showing 1789–1800 of 7598 results
Infineon Technologies IRF6794MTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
5 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
32A Ta 200A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 100W Tc |
| Turn On Delay Time |
15 ns |
| Turn Off Delay Time |
9.7 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Power Dissipation |
100W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
1.7mOhm @ 32A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
4420pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 4.5V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.6 ns |
| Continuous Drain Current (ID) |
32A |
| Drain to Source Breakdown Voltage |
25V |
| Input Capacitance |
4.42nF |
| FET Type |
N-Channel |
| FET Feature |
Schottky Diode (Body) |
| Drain to Source Resistance |
3mOhm |
| Rds On Max |
1.7 mΩ |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF6797MTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
36A Ta 210A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
HEXFET® |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Turn Off Delay Time |
20 ns |
| JESD-30 Code |
R-XBCC-N3 |
| Rise Time |
32ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
89W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5790pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 4.5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
36A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
300A |
| Avalanche Energy Rating (Eas) |
260 mJ |
| Height |
506μm |
| Length |
6.35mm |
| Width |
5.05mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF6894MTR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
2.1W |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
32A Ta 160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.1W Ta 54W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
20 ns |
| Published |
2011 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
1.3MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
32A |
| Gate to Source Voltage (Vgs) |
16V |
| Vgs(th) (Max) @ Id |
2.1V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4160pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 4.5V |
| Rise Time |
42ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
14 ns |
| FET Type |
N-Channel |
| Turn On Delay Time |
16 ns |
| Drain to Source Breakdown Voltage |
25V |
| Input Capacitance |
4.16nF |
| FET Feature |
Schottky Diode (Body) |
| Drain to Source Resistance |
1.7mOhm |
| Rds On Max |
1.3 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
1.3mOhm @ 33A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF7204
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Tc |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Mounting Type |
Surface Mount |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Operating Temperature |
-55°C~150°C TJ |
| HTS Code |
8541.29.00.95 |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 5.3A, 10V |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Drain Current-Max (Abs) (ID) |
5.3A |
| Drain-source On Resistance-Max |
0.06Ohm |
| DS Breakdown Voltage-Min |
20V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7204TR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.3A Ta |
| Number of Elements |
1 |
| Packaging |
Cut Tape (CT) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Published |
1997 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Mounting Type |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 5.3A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Drain to Source Voltage (Vdss) |
20V |
| Drain Current-Max (Abs) (ID) |
5.3A |
| Drain-source On Resistance-Max |
0.06Ohm |
| DS Breakdown Voltage-Min |
20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7204TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Resistance |
60mOhm |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
14 ns |
| Number of Terminations |
8 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
-20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
-5.3A |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Output Current |
5.3A |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
-5.3A |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
5.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
26ns |
| Drain to Source Voltage (Vdss) |
20V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
68 ns |
| Turn-Off Delay Time |
100 ns |
| Threshold Voltage |
-2.5V |
| Gate to Source Voltage (Vgs) |
12V |
| FET Type |
P-Channel |
| Drain to Source Breakdown Voltage |
-20V |
| Dual Supply Voltage |
-20V |
| Recovery Time |
100 ns |
| Nominal Vgs |
-2.5 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 5.3A, 10V |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF7205TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
8 |
| Resistance |
70mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
-30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-5.3A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Tc |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Turn-Off Delay Time |
97 ns |
| Turn On Delay Time |
14 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 4.6A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
4.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Rise Time |
21ns |
| Drain to Source Voltage (Vdss) |
30V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
71 ns |
| Continuous Drain Current (ID) |
-4.6A |
| Threshold Voltage |
-3V |
| Power Dissipation |
2.5W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Dual Supply Voltage |
-30V |
| Recovery Time |
100 ns |
| Nominal Vgs |
-3 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
P-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF7207PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
5.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Tc |
| Current Rating |
-5.4A |
| Mount |
Surface Mount |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
-20V |
| Turn Off Delay Time |
43 ns |
| Power Dissipation |
2.5W |
| Continuous Drain Current (ID) |
-5.4A |
| Threshold Voltage |
-700mV |
| Rds On (Max) @ Id, Vgs |
60mOhm @ 5.4A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
780pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 4.5V |
| Rise Time |
24ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
41 ns |
| Turn On Delay Time |
11 ns |
| FET Type |
P-Channel |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
-20V |
| Input Capacitance |
780pF |
| Drain to Source Resistance |
60mOhm |
| Rds On Max |
60 mΩ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7220GTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Min Operating Temperature |
-55°C |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
1.04 μs |
| Rds On (Max) @ Id, Vgs |
12mOhm @ 11A, 4.5V |
| Vgs(th) (Max) @ Id |
600mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8075pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
125nC @ 5V |
| Rise Time |
420ns |
| Drain to Source Voltage (Vdss) |
14V |
| Power Dissipation |
2.5W |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
-14V |
| Input Capacitance |
8.075nF |
| Drain to Source Resistance |
12mOhm |
| Rds On Max |
12 mΩ |
| FET Type |
P-Channel |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7240PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2005 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 10.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
9250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
10.5A |
| Drain-source On Resistance-Max |
0.015Ohm |
| Pulsed Drain Current-Max (IDM) |
43A |
| DS Breakdown Voltage-Min |
40V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF7241TR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Mounting Type |
Surface Mount |
| Transistor Application |
SWITCHING |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
41m Ω @ 6.2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Additional Feature |
HIGH RELIABILITY |
| Input Capacitance (Ciss) (Max) @ Vds |
3220pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
6.2A |
| Terminal Form |
GULL WING |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7402TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
6.8A |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
24 ns |
| Published |
1999 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Additional Feature |
FAST SWITCHING |
| Voltage - Rated DC |
20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
32 ns |
| Continuous Drain Current (ID) |
6.8A |
| Turn On Delay Time |
5.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 4.1A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
650pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 4.5V |
| Rise Time |
47ns |
| Vgs (Max) |
±12V |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.035Ohm |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
54A |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
2.5W |
| Lead Free |
Contains Lead, Lead Free |