Showing 1801–1812 of 7598 results
Infineon Technologies IRF7403TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
8 |
| Mount |
Surface Mount, Through Hole |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
HEXFET® |
| Part Status |
Active |
| Power Dissipation |
2.5W |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
22mOhm |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
8.5A |
| Number of Elements |
1 |
| Row Spacing |
6.3 mm |
| Power Dissipation-Max |
2.5W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
1V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
8.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Rise Time |
37ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Turn-Off Delay Time |
42 ns |
| Continuous Drain Current (ID) |
8.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6.7A |
| Turn On Delay Time |
10 ns |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Recovery Time |
78 ns |
| Nominal Vgs |
1 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 4A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF7404QTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Configuration |
Single |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
6.7A Ta |
| Number of Elements |
1 |
| Turn Off Delay Time |
100 ns |
| Published |
2015 |
| Series |
HEXFET® |
| Packaging |
Cut Tape (CT) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
2.5W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
65 ns |
| Continuous Drain Current (ID) |
-6.7A |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 3.2A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 4.5V |
| Rise Time |
32ns |
| Drain to Source Voltage (Vdss) |
20V |
| Turn On Delay Time |
14 ns |
| Power Dissipation |
2.5W |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
7.7A |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| FET Type |
P-Channel |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7413PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Position |
DUAL |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
79nC @ 10V |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 7.3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
13A |
| Drain-source On Resistance-Max |
0.011Ohm |
| Pulsed Drain Current-Max (IDM) |
58A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
260 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF7413ZGTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Power Dissipation |
2.5W |
| Turn Off Delay Time |
11 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
13A |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
2.25V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1210pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Rise Time |
6.3ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.8 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Turn On Delay Time |
8.7 ns |
| Input Capacitance |
1.21nF |
| Drain to Source Resistance |
10mOhm |
| Rds On Max |
10 mΩ |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| Rds On (Max) @ Id, Vgs |
10mOhm @ 13A, 10V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7422D2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
4.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
-55°C~150°C TJ |
| FET Type |
P-Channel |
| Mount |
Surface Mount |
| Series |
FETKY™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
-20V |
| Current Rating |
-4.3A |
| Element Configuration |
Single |
| Power Dissipation |
2W |
| Turn On Delay Time |
8.1 ns |
| Forward Current |
4A |
| Packaging |
Tube |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 2.2A, 4.5V |
| Drain Current-Max (Abs) (ID) |
4.6A |
| Drain to Source Breakdown Voltage |
-20V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 4.5V |
| Rise Time |
26ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Forward Voltage |
520mV |
| Fall Time (Typ) |
33 ns |
| Continuous Drain Current (ID) |
-4.3A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
12V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
610pF @ 15V |
| Dual Supply Voltage |
-20V |
| Max Forward Surge Current (Ifsm) |
20A |
| FET Feature |
Schottky Diode (Isolated) |
| Nominal Vgs |
4 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7424TR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
Single |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
13.5m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4030pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
11A |
| Drain-source On Resistance-Max |
0.0135Ohm |
| DS Breakdown Voltage-Min |
30V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7425PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Packaging |
Tube |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.2m Ω @ 15A, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
7980pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 4.5V |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
15A |
| Drain-source On Resistance-Max |
0.0082Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
20V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF7455
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
3480pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 5V |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
15A |
| Drain-source On Resistance-Max |
0.0075Ohm |
| Pulsed Drain Current-Max (IDM) |
120A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7456TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
8 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Active |
| Power Dissipation |
2.5W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
6.5mOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
16A |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
20 ns |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
12V |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3640pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
16A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 5V |
| Rise Time |
25ns |
| Drive Voltage (Max Rds On,Min Rds On) |
2.8V 10V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
52 ns |
| Turn-Off Delay Time |
50 ns |
| Continuous Drain Current (ID) |
16A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
20V |
| Dual Supply Voltage |
20V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Recovery Time |
72 ns |
| Nominal Vgs |
2 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7460PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
12A |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
12 ns |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2050pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
6.9ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.3 ns |
| FET Type |
N-Channel |
| Power Dissipation |
2.5W |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
2.05nF |
| Drain to Source Resistance |
14mOhm |
| Rds On Max |
10 mΩ |
| Nominal Vgs |
3 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
10mOhm @ 12A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF7463PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Packaging |
Tube |
| Published |
2004 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Mounting Type |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3150pF @ 15V |
| JESD-30 Code |
R-PDSO-G8 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±12V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
14A |
| Drain-source On Resistance-Max |
0.008Ohm |
| Pulsed Drain Current-Max (IDM) |
110A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
320 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF7464PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
1.2A |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
1.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
18 ns |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
200V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Threshold Voltage |
5.5V |
| Gate to Source Voltage (Vgs) |
30V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
9.5ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
1.2A |
| FET Type |
N-Channel |
| Power Dissipation |
2.5W |
| Drain to Source Breakdown Voltage |
200V |
| Dual Supply Voltage |
200V |
| Input Capacitance |
280pF |
| Drain to Source Resistance |
730mOhm |
| Rds On Max |
730 mΩ |
| Nominal Vgs |
5.5 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
730mOhm @ 720mA, 10V |
| Lead Free |
Lead Free |