Showing 1813–1824 of 7598 results
Infineon Technologies IRF7464TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
18 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
1.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Min Operating Temperature |
-55°C |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
730MOhm |
| Max Operating Temperature |
150°C |
| Power Dissipation (Max) |
2.5W Ta |
| Voltage - Rated DC |
200V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±30V |
| Power Dissipation |
2.5W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
730mOhm @ 720mA, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
9.5ns |
| Current Rating |
1.2A |
| Element Configuration |
Single |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
1.2A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
200V |
| Input Capacitance |
280pF |
| Drain to Source Resistance |
730mOhm |
| Rds On Max |
730 mΩ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7467
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 10V |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
12mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2530pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7467TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
19 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 10V |
| Number of Elements |
1 |
| Min Operating Temperature |
-55°C |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Power Dissipation (Max) |
2.5W Ta |
| Element Configuration |
Single |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
12mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2530pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 4.5V |
| Rise Time |
2.5ns |
| Drain to Source Voltage (Vdss) |
30V |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
7.8 ns |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
2.53nF |
| Drain to Source Resistance |
12mOhm |
| Rds On Max |
12 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7469TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
14 ns |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Resistance |
17MOhm |
| Voltage - Rated DC |
40V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
9A |
| Operating Temperature |
-55°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
17m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 4.5V |
| Rise Time |
2.2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.5 ns |
| Continuous Drain Current (ID) |
9A |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
11 ns |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
73A |
| Nominal Vgs |
3 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF7471TR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2820pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7475TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 4.5V |
| Power Dissipation (Max) |
2.5W Ta |
| Power Dissipation |
2.5W |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Turn Off Delay Time |
13 ns |
| Turn On Delay Time |
7.5 ns |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
12V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1590pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
33ns |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
7.5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 8.8A, 4.5V |
| Drain to Source Breakdown Voltage |
12V |
| Input Capacitance |
1.59nF |
| Drain to Source Resistance |
15mOhm |
| Rds On Max |
15 mΩ |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7477TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Current Rating |
14A |
| Power Dissipation |
2.5W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2710pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 4.5V |
| Rise Time |
9.8ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7483MTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MF |
| Current - Continuous Drain (Id) @ 25℃ |
135A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
74W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
StrongIRFET™ |
| Part Status |
Active |
| Factory Lead Time |
12 Weeks |
| Resistance |
2.3mOhm |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.3m Ω @ 81A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3913pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
81nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
135A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7488TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
44 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
6.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Resistance |
29MOhm |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
16 ns |
| Turn On Delay Time |
13 ns |
| Rds On (Max) @ Id, Vgs |
29m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1680pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
6.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Power Dissipation |
2.5W |
| Drain to Source Breakdown Voltage |
80V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF7492TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
2.5W |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
3.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
27 ns |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
79MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1820pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
59nC @ 10V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
3.7A |
| FET Type |
N-Channel |
| Turn On Delay Time |
15 ns |
| Input Capacitance |
1.82nF |
| Drain to Source Resistance |
79mOhm |
| Rds On Max |
79 mΩ |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
79mOhm @ 2.2A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF7493TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
15MOhm |
| Voltage - Rated DC |
80V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
9.3A |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
4V |
| Power Dissipation |
2.5W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1510pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| Rise Time |
7.5ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
9.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Operating Mode |
ENHANCEMENT MODE |
| Pulsed Drain Current-Max (IDM) |
74A |
| Dual Supply Voltage |
80V |
| Recovery Time |
56 ns |
| Nominal Vgs |
4 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
8.3 ns |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRF7494TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
9 ns |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
5.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
29 ns |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
44MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
2.5W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
1.783nF |
| Input Capacitance (Ciss) (Max) @ Vds |
1783pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
5.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
44mOhm @ 3.1A, 10V |
| FET Type |
N-Channel |
| Drain to Source Resistance |
44mOhm |
| Rds On Max |
44 mΩ |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
RoHS Compliant |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Lead Free |
Lead Free |