Showing 1825–1836 of 7598 results
Transistors - FETs/MOSFETs - Single
Infineon Technologies IRF7495PBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
7.3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.5W Ta |
Terminal Position |
DUAL |
Factory Lead Time |
12 Weeks |
Published |
2003 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Operating Temperature |
-55°C~150°C TJ |
Terminal Form |
GULL WING |
Input Capacitance (Ciss) (Max) @ Vds |
1530pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
51nC @ 10V |
JESD-30 Code |
R-PDSO-G8 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
22m Ω @ 4.4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Drain to Source Voltage (Vdss) |
100V |
Vgs (Max) |
±20V |
JEDEC-95 Code |
MS-012AA |
Drain Current-Max (Abs) (ID) |
7.3A |
Drain-source On Resistance-Max |
0.022Ohm |
Pulsed Drain Current-Max (IDM) |
58A |
DS Breakdown Voltage-Min |
100V |
Avalanche Energy Rating (Eas) |
180 mJ |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF7521D1PBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Number of Pins |
8 |
Supplier Device Package |
Micro8™ |
Current - Continuous Drain (Id) @ 25℃ |
2.4A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.3W Ta |
Power Dissipation |
1.25W |
Turn Off Delay Time |
15 ns |
Packaging |
Tube |
Published |
2004 |
Series |
FETKY™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Fall Time (Typ) |
16 ns |
FET Type |
N-Channel |
Vgs(th) (Max) @ Id |
700mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
260pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
8nC @ 4.5V |
Rise Time |
24ns |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±12V |
Continuous Drain Current (ID) |
2.4A |
Gate to Source Voltage (Vgs) |
12V |
Turn On Delay Time |
5.7 ns |
Drain to Source Breakdown Voltage |
20V |
Input Capacitance |
260pF |
FET Feature |
Schottky Diode (Isolated) |
Drain to Source Resistance |
135mOhm |
Rds On Max |
135 mΩ |
Radiation Hardening |
No |
Rds On (Max) @ Id, Vgs |
135mOhm @ 1.7A, 4.5V |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7524D1PBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Number of Pins |
8 |
Current - Continuous Drain (Id) @ 25℃ |
1.7A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.25W Ta |
Turn Off Delay Time |
38 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2005 |
Series |
FETKY™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Power Dissipation |
1.25W |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
270m Ω @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id |
700mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
240pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
8.2nC @ 4.5V |
Rise Time |
35ns |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±12V |
Fall Time (Typ) |
43 ns |
Continuous Drain Current (ID) |
-1.7A |
Gate to Source Voltage (Vgs) |
12V |
Drain to Source Breakdown Voltage |
-20V |
FET Feature |
Schottky Diode (Isolated) |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7526D1TRPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Number of Pins |
8 |
Current - Continuous Drain (Id) @ 25℃ |
2A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.25W Ta |
Turn Off Delay Time |
19 ns |
Turn On Delay Time |
9.7 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
1999 |
Series |
FETKY™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Configuration |
Single |
Power Dissipation |
800mW |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Continuous Drain Current (ID) |
-2A |
Rds On (Max) @ Id, Vgs |
200m Ω @ 1.2A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
180pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
Rise Time |
12ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
9.3 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
2A |
FET Type |
P-Channel |
Drain to Source Breakdown Voltage |
-30V |
FET Feature |
Schottky Diode (Isolated) |
Height |
910μm |
Length |
3.048mm |
Width |
3.048mm |
Radiation Hardening |
No |
Vgs(th) (Max) @ Id |
1V @ 250μA |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7665S2TRPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
DirectFET™ Isometric SB |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.1A Ta 14.4A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.4W Ta 30W Tc |
Turn Off Delay Time |
7.1 ns |
Operating Mode |
ENHANCEMENT MODE |
Operating Temperature |
-55°C~175°C TJ |
Published |
2009 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Terminal Position |
BOTTOM |
JESD-30 Code |
R-XBCC-N2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Mount |
Surface Mount |
Factory Lead Time |
13 Weeks |
Continuous Drain Current (ID) |
14.4A |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
62m Ω @ 8.9A, 10V |
Vgs(th) (Max) @ Id |
5V @ 25μA |
Input Capacitance (Ciss) (Max) @ Vds |
515pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
Rise Time |
6.4ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
3.6 ns |
Threshold Voltage |
4V |
Gate to Source Voltage (Vgs) |
20V |
Power Dissipation |
30W |
Drain-source On Resistance-Max |
0.062Ohm |
Drain to Source Breakdown Voltage |
100V |
Pulsed Drain Current-Max (IDM) |
58A |
Nominal Vgs |
4 V |
Height |
508μm |
Length |
4.826mm |
Width |
3.9624mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
Turn On Delay Time |
3.8 ns |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF7701TRPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Max Operating Temperature |
150°C |
Package / Case |
8-TSSOP (0.173, 4.40mm Width) |
Number of Pins |
8 |
Supplier Device Package |
8-TSSOP |
Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Power Dissipation (Max) |
1.5W Ta |
Operating Temperature |
-55°C~150°C TJ |
Number of Elements |
1 |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Series |
HEXFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
11MOhm |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Continuous Drain Current (ID) |
-10A |
Gate to Source Voltage (Vgs) |
8V |
Rds On (Max) @ Id, Vgs |
11mOhm @ 10A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5050pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
100nC @ 4.5V |
Drain to Source Voltage (Vdss) |
12V |
Vgs (Max) |
±8V |
Power Dissipation |
1.5W |
Min Operating Temperature |
-55°C |
Drain to Source Breakdown Voltage |
-12V |
Input Capacitance |
5.05nF |
Drain to Source Resistance |
11mOhm |
Rds On Max |
11 mΩ |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
FET Type |
P-Channel |
Lead Free |
Lead Free |
Infineon Technologies IRF7702TRPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
8-TSSOP (0.173, 4.40mm Width) |
Number of Pins |
8 |
Supplier Device Package |
8-TSSOP |
Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.5W Tc |
Power Dissipation |
1.5W |
Mount |
Surface Mount |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Series |
HEXFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
14mOhm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Turn Off Delay Time |
320 ns |
Turn On Delay Time |
16 ns |
Gate to Source Voltage (Vgs) |
8V |
Drain to Source Breakdown Voltage |
-12V |
Vgs(th) (Max) @ Id |
1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3470pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
81nC @ 4.5V |
Rise Time |
21ns |
Drain to Source Voltage (Vdss) |
12V |
Vgs (Max) |
±8V |
Fall Time (Typ) |
250 ns |
Continuous Drain Current (ID) |
-8A |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
14mOhm @ 8A, 4.5V |
Input Capacitance |
3.47nF |
Drain to Source Resistance |
14mOhm |
Rds On Max |
14 mΩ |
Height |
1.0414mm |
Length |
3.0988mm |
Width |
4.4958mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRF7703
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mounting Type |
Surface Mount |
Package / Case |
8-TSSOP (0.173, 4.40mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.5W Ta |
Voltage - Rated DC |
-40V |
Mount |
Surface Mount |
Published |
2005 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Additional Feature |
HIGH RELIABILITY |
Operating Temperature |
-55°C~150°C TJ |
Terminal Position |
DUAL |
Rds On (Max) @ Id, Vgs |
28m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Current Rating |
-6A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.5W |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Input Capacitance (Ciss) (Max) @ Vds |
5220pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
62nC @ 4.5V |
Drain to Source Voltage (Vdss) |
40V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
6A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
6A |
Pulsed Drain Current-Max (IDM) |
24A |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
Infineon Technologies IRF7703TRPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Min Operating Temperature |
-55°C |
Package / Case |
8-TSSOP (0.173, 4.40mm Width) |
Number of Pins |
8 |
Supplier Device Package |
8-TSSOP |
Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
1.5W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
155 ns |
Published |
2009 |
Series |
HEXFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Termination |
SMD/SMT |
Resistance |
28MOhm |
Max Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-40V |
Rds On (Max) @ Id, Vgs |
28mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5220pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
62nC @ 4.5V |
Drain to Source Voltage (Vdss) |
40V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
-6A |
Turn On Delay Time |
43 ns |
Power Dissipation |
1.5W |
Dual Supply Voltage |
-40V |
Input Capacitance |
5.22nF |
Drain to Source Resistance |
45mOhm |
Rds On Max |
28 mΩ |
Nominal Vgs |
-3 V |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
FET Type |
P-Channel |
Lead Free |
Lead Free |
Infineon Technologies IRF7705GTRPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Max Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Package / Case |
8-TSSOP (0.173, 4.40mm Width) |
Number of Pins |
8 |
Supplier Device Package |
8-TSSOP |
Current - Continuous Drain (Id) @ 25℃ |
8A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
1.5W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2009 |
Series |
HEXFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Power Dissipation |
1.5W |
Min Operating Temperature |
-55°C |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
18mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2774pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
88nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
8A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-30V |
Input Capacitance |
2.774nF |
Drain to Source Resistance |
30mOhm |
Rds On Max |
18 mΩ |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7748L1TRPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Number of Elements |
1 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Published |
2013 |
Packaging |
Tape & Reel (TR) |
Operating Temperature |
-55°C~175°C TJ |
Turn Off Delay Time |
54 ns |
ECCN Code |
EAR99 |
Power Dissipation (Max) |
3.3W Ta 94W Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Current - Continuous Drain (Id) @ 25℃ |
28A Ta 148A Tc |
Number of Pins |
13 |
Package / Case |
DirectFET™ Isometric L6 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Power Dissipation |
3.3W |
Drain to Source Voltage (Vdss) |
60V |
RoHS Status |
ROHS3 Compliant |
Radiation Hardening |
No |
Gate to Source Voltage (Vgs) |
20V |
Continuous Drain Current (ID) |
148A |
Fall Time (Typ) |
77 ns |
Vgs (Max) |
±20V |
Rise Time |
104ns |
Configuration |
Single |
Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
8075pF @ 50V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Rds On (Max) @ Id, Vgs |
2.2m Ω @ 89A, 10V |
FET Type |
N-Channel |
Turn On Delay Time |
19 ns |
Lead Free |
Lead Free |
Infineon Technologies IRF7749L1TRPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
FET Type |
N-Channel |
Mounting Type |
Surface Mount |
Package / Case |
DirectFET™ Isometric L8 |
Number of Pins |
15 |
Supplier Device Package |
DIRECTFET L8 |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Published |
2013 |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
3.3W Ta 125W Tc |
Power Dissipation |
3.3W |
Turn On Delay Time |
17 ns |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Turn-Off Delay Time |
78 ns |
Continuous Drain Current (ID) |
200A |
Current - Continuous Drain (Id) @ 25°C |
33A Ta 200A Tc |
Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
Rise Time |
43ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
39 ns |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Rds On (Max) @ Id, Vgs |
1.5mOhm @ 120A, 10V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
Input Capacitance |
12.32nF |
Drain to Source Resistance |
1.1mOhm |
Rds On Max |
1.5 mΩ |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
12320pF @ 25V |
Lead Free |
Lead Free |