Transistors - FETs/MOSFETs - Single

Infineon Technologies IRF7495PBF

In stock

SKU: IRF7495PBF-11
Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

7.3A Ta

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

2.5W Ta

Terminal Position

DUAL

Factory Lead Time

12 Weeks

Published

2003

Series

HEXFET®

JESD-609 Code

e3

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Operating Temperature

-55°C~150°C TJ

Terminal Form

GULL WING

Input Capacitance (Ciss) (Max) @ Vds

1530pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

JESD-30 Code

R-PDSO-G8

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

22m Ω @ 4.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

JEDEC-95 Code

MS-012AA

Drain Current-Max (Abs) (ID)

7.3A

Drain-source On Resistance-Max

0.022Ohm

Pulsed Drain Current-Max (IDM)

58A

DS Breakdown Voltage-Min

100V

Avalanche Energy Rating (Eas)

180 mJ

RoHS Status

ROHS3 Compliant

Infineon Technologies IRF7521D1PBF

In stock

SKU: IRF7521D1PBF-11
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~150°C TJ

Number of Pins

8

Supplier Device Package

Micro8™

Current - Continuous Drain (Id) @ 25℃

2.4A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.7V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.3W Ta

Power Dissipation

1.25W

Turn Off Delay Time

15 ns

Packaging

Tube

Published

2004

Series

FETKY™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mounting Type

Surface Mount

Mount

Surface Mount

Fall Time (Typ)

16 ns

FET Type

N-Channel

Vgs(th) (Max) @ Id

700mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Rise Time

24ns

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±12V

Continuous Drain Current (ID)

2.4A

Gate to Source Voltage (Vgs)

12V

Turn On Delay Time

5.7 ns

Drain to Source Breakdown Voltage

20V

Input Capacitance

260pF

FET Feature

Schottky Diode (Isolated)

Drain to Source Resistance

135mOhm

Rds On Max

135 mΩ

Radiation Hardening

No

Rds On (Max) @ Id, Vgs

135mOhm @ 1.7A, 4.5V

RoHS Status

RoHS Compliant

Infineon Technologies IRF7524D1PBF

In stock

SKU: IRF7524D1PBF-11
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Number of Pins

8

Current - Continuous Drain (Id) @ 25℃

1.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.7V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.25W Ta

Turn Off Delay Time

38 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2005

Series

FETKY™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Surface Mount

Power Dissipation

1.25W

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

270m Ω @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

240pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 4.5V

Rise Time

35ns

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±12V

Fall Time (Typ)

43 ns

Continuous Drain Current (ID)

-1.7A

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

-20V

FET Feature

Schottky Diode (Isolated)

RoHS Status

RoHS Compliant

Infineon Technologies IRF7526D1TRPBF

In stock

SKU: IRF7526D1TRPBF-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Number of Pins

8

Current - Continuous Drain (Id) @ 25℃

2A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.25W Ta

Turn Off Delay Time

19 ns

Turn On Delay Time

9.7 ns

Operating Temperature

-55°C~150°C TJ

Published

1999

Series

FETKY™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Configuration

Single

Power Dissipation

800mW

Mounting Type

Surface Mount

Mount

Surface Mount

Continuous Drain Current (ID)

-2A

Rds On (Max) @ Id, Vgs

200m Ω @ 1.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Rise Time

12ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

9.3 ns

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

2A

FET Type

P-Channel

Drain to Source Breakdown Voltage

-30V

FET Feature

Schottky Diode (Isolated)

Height

910μm

Length

3.048mm

Width

3.048mm

Radiation Hardening

No

Vgs(th) (Max) @ Id

1V @ 250μA

RoHS Status

RoHS Compliant

Infineon Technologies IRF7665S2TRPBF

In stock

SKU: IRF7665S2TRPBF-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric SB

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.1A Ta 14.4A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

2.4W Ta 30W Tc

Turn Off Delay Time

7.1 ns

Operating Mode

ENHANCEMENT MODE

Operating Temperature

-55°C~175°C TJ

Published

2009

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Terminal Position

BOTTOM

JESD-30 Code

R-XBCC-N2

Configuration

SINGLE WITH BUILT-IN DIODE

Mount

Surface Mount

Factory Lead Time

13 Weeks

Continuous Drain Current (ID)

14.4A

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

62m Ω @ 8.9A, 10V

Vgs(th) (Max) @ Id

5V @ 25μA

Input Capacitance (Ciss) (Max) @ Vds

515pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Rise Time

6.4ns

Vgs (Max)

±20V

Fall Time (Typ)

3.6 ns

Threshold Voltage

4V

Gate to Source Voltage (Vgs)

20V

Power Dissipation

30W

Drain-source On Resistance-Max

0.062Ohm

Drain to Source Breakdown Voltage

100V

Pulsed Drain Current-Max (IDM)

58A

Nominal Vgs

4 V

Height

508μm

Length

4.826mm

Width

3.9624mm

Radiation Hardening

No

REACH SVHC

No SVHC

Turn On Delay Time

3.8 ns

RoHS Status

ROHS3 Compliant

Infineon Technologies IRF7701TRPBF

In stock

SKU: IRF7701TRPBF-11
Manufacturer

Infineon Technologies

Max Operating Temperature

150°C

Package / Case

8-TSSOP (0.173, 4.40mm Width)

Number of Pins

8

Supplier Device Package

8-TSSOP

Current - Continuous Drain (Id) @ 25℃

10A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Power Dissipation (Max)

1.5W Ta

Operating Temperature

-55°C~150°C TJ

Number of Elements

1

Packaging

Tape & Reel (TR)

Published

2006

Series

HEXFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

11MOhm

Mounting Type

Surface Mount

Mount

Surface Mount

Continuous Drain Current (ID)

-10A

Gate to Source Voltage (Vgs)

8V

Rds On (Max) @ Id, Vgs

11mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

5050pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

100nC @ 4.5V

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Power Dissipation

1.5W

Min Operating Temperature

-55°C

Drain to Source Breakdown Voltage

-12V

Input Capacitance

5.05nF

Drain to Source Resistance

11mOhm

Rds On Max

11 mΩ

Radiation Hardening

No

RoHS Status

RoHS Compliant

FET Type

P-Channel

Lead Free

Lead Free

Infineon Technologies IRF7702TRPBF

In stock

SKU: IRF7702TRPBF-11
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173, 4.40mm Width)

Number of Pins

8

Supplier Device Package

8-TSSOP

Current - Continuous Drain (Id) @ 25℃

8A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.5W Tc

Power Dissipation

1.5W

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2006

Series

HEXFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

14mOhm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Turn Off Delay Time

320 ns

Turn On Delay Time

16 ns

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

-12V

Vgs(th) (Max) @ Id

1.2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

3470pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

81nC @ 4.5V

Rise Time

21ns

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Fall Time (Typ)

250 ns

Continuous Drain Current (ID)

-8A

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

14mOhm @ 8A, 4.5V

Input Capacitance

3.47nF

Drain to Source Resistance

14mOhm

Rds On Max

14 mΩ

Height

1.0414mm

Length

3.0988mm

Width

4.4958mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRF7703

In stock

SKU: IRF7703-11
Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173, 4.40mm Width)

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

6A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta

Voltage - Rated DC

-40V

Mount

Surface Mount

Published

2005

Series

HEXFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Additional Feature

HIGH RELIABILITY

Operating Temperature

-55°C~150°C TJ

Terminal Position

DUAL

Rds On (Max) @ Id, Vgs

28m Ω @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Current Rating

-6A

Time@Peak Reflow Temperature-Max (s)

30

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.5W

FET Type

P-Channel

Transistor Application

SWITCHING

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Input Capacitance (Ciss) (Max) @ Vds

5220pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

62nC @ 4.5V

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±20V

Continuous Drain Current (ID)

6A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

6A

Pulsed Drain Current-Max (IDM)

24A

RoHS Status

Non-RoHS Compliant

Lead Free

Contains Lead

Infineon Technologies IRF7703TRPBF

In stock

SKU: IRF7703TRPBF-11
Manufacturer

Infineon Technologies

Min Operating Temperature

-55°C

Package / Case

8-TSSOP (0.173, 4.40mm Width)

Number of Pins

8

Supplier Device Package

8-TSSOP

Current - Continuous Drain (Id) @ 25℃

6A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

1.5W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

155 ns

Published

2009

Series

HEXFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

SMD/SMT

Resistance

28MOhm

Max Operating Temperature

150°C

Mounting Type

Surface Mount

Mount

Surface Mount

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-40V

Rds On (Max) @ Id, Vgs

28mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

5220pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

62nC @ 4.5V

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±20V

Continuous Drain Current (ID)

-6A

Turn On Delay Time

43 ns

Power Dissipation

1.5W

Dual Supply Voltage

-40V

Input Capacitance

5.22nF

Drain to Source Resistance

45mOhm

Rds On Max

28 mΩ

Nominal Vgs

-3 V

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

FET Type

P-Channel

Lead Free

Lead Free

Infineon Technologies IRF7705GTRPBF

In stock

SKU: IRF7705GTRPBF-11
Manufacturer

Infineon Technologies

Max Operating Temperature

150°C

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173, 4.40mm Width)

Number of Pins

8

Supplier Device Package

8-TSSOP

Current - Continuous Drain (Id) @ 25℃

8A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

1.5W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2009

Series

HEXFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Surface Mount

Power Dissipation

1.5W

Min Operating Temperature

-55°C

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

18mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2774pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Continuous Drain Current (ID)

8A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-30V

Input Capacitance

2.774nF

Drain to Source Resistance

30mOhm

Rds On Max

18 mΩ

RoHS Status

RoHS Compliant

Infineon Technologies IRF7748L1TRPBF

In stock

SKU: IRF7748L1TRPBF-11
Manufacturer

Infineon Technologies

Number of Elements

1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Published

2013

Packaging

Tape & Reel (TR)

Operating Temperature

-55°C~175°C TJ

Turn Off Delay Time

54 ns

ECCN Code

EAR99

Power Dissipation (Max)

3.3W Ta 94W Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

28A Ta 148A Tc

Number of Pins

13

Package / Case

DirectFET™ Isometric L6

Mounting Type

Surface Mount

Mount

Surface Mount

Factory Lead Time

12 Weeks

Power Dissipation

3.3W

Drain to Source Voltage (Vdss)

60V

RoHS Status

ROHS3 Compliant

Radiation Hardening

No

Gate to Source Voltage (Vgs)

20V

Continuous Drain Current (ID)

148A

Fall Time (Typ)

77 ns

Vgs (Max)

±20V

Rise Time

104ns

Configuration

Single

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

8075pF @ 50V

Vgs(th) (Max) @ Id

4V @ 250μA

Rds On (Max) @ Id, Vgs

2.2m Ω @ 89A, 10V

FET Type

N-Channel

Turn On Delay Time

19 ns

Lead Free

Lead Free

Infineon Technologies IRF7749L1TRPBF

In stock

SKU: IRF7749L1TRPBF-11
Manufacturer

Infineon Technologies

FET Type

N-Channel

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric L8

Number of Pins

15

Supplier Device Package

DIRECTFET L8

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Published

2013

Max Operating Temperature

175°C

Min Operating Temperature

-55°C

Number of Elements

1

Number of Channels

1

Power Dissipation-Max

3.3W Ta 125W Tc

Power Dissipation

3.3W

Turn On Delay Time

17 ns

Mount

Surface Mount

Factory Lead Time

12 Weeks

Turn-Off Delay Time

78 ns

Continuous Drain Current (ID)

200A

Current - Continuous Drain (Id) @ 25°C

33A Ta 200A Tc

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Rise Time

43ns

Drain to Source Voltage (Vdss)

60V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

39 ns

Vgs(th) (Max) @ Id

4V @ 250μA

Rds On (Max) @ Id, Vgs

1.5mOhm @ 120A, 10V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

Input Capacitance

12.32nF

Drain to Source Resistance

1.1mOhm

Rds On Max

1.5 mΩ

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds

12320pF @ 25V

Lead Free

Lead Free