Showing 1837–1848 of 7598 results
Infineon Technologies IRF7749L2TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Package / Case |
DirectFET™ Isometric L8 |
| Number of Pins |
8 |
| Supplier Device Package |
DIRECTFET L8 |
| Current - Continuous Drain (Id) @ 25℃ |
33A Ta 375A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.3W Ta 125W Tc |
| Turn Off Delay Time |
78 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
1.5MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
125W |
| Turn On Delay Time |
17 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance |
12.32nF |
| Recovery Time |
68 ns |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Rise Time |
43ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
39 ns |
| Continuous Drain Current (ID) |
33A |
| Threshold Voltage |
2.9V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Rds On (Max) @ Id, Vgs |
1.5mOhm @ 120A, 10V |
| Drain to Source Resistance |
1.1mOhm |
| Rds On Max |
1.5 mΩ |
| Nominal Vgs |
2.9 V |
| Height |
508μm |
| Length |
9.144mm |
| Width |
7.1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
12320pF @ 25V |
| Lead Free |
Lead Free |
Infineon Technologies IRF7769L2TR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric L8 |
| Number of Pins |
11 |
| Supplier Device Package |
DIRECTFET L8 |
| Current - Continuous Drain (Id) @ 25℃ |
375A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.3W Ta 125W Tc |
| Turn Off Delay Time |
92 ns |
| Turn On Delay Time |
44 ns |
| Mount |
Surface Mount |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
3.5MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
125W |
| Operating Temperature |
-55°C~175°C TJ |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
11.56nF |
| Input Capacitance (Ciss) (Max) @ Vds |
11560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Rise Time |
32ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
41 ns |
| Continuous Drain Current (ID) |
20A |
| Threshold Voltage |
2.7V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
3.5mOhm @ 74A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Drain to Source Resistance |
2.8mOhm |
| Rds On Max |
3.5 mΩ |
| Nominal Vgs |
2.7 V |
| Height |
508μm |
| Length |
9.144mm |
| Width |
7.1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7799L2TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric L8 |
| Number of Pins |
11 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
375A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
4.3W Ta 125W Tc |
| Turn Off Delay Time |
73.9 ns |
| Power Dissipation |
125W |
| Mount |
Surface Mount |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
9 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
R-XBCC-N9 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~175°C TJ |
| Case Connection |
DRAIN |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
30V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
38m Ω @ 21A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6714pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
165nC @ 10V |
| Rise Time |
33.5ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
26.6 ns |
| Continuous Drain Current (ID) |
6.6A |
| Turn On Delay Time |
36.3 ns |
| FET Type |
N-Channel |
| Drain Current-Max (Abs) (ID) |
375A |
| Drain-source On Resistance-Max |
0.038Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
140A |
| Avalanche Energy Rating (Eas) |
325 mJ |
| Height |
508μm |
| Length |
9.144mm |
| Width |
7.112mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF7805ATRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Current Rating |
13A |
| Turn Off Delay Time |
38 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
13A |
| Turn On Delay Time |
16 ns |
| Rds On (Max) @ Id, Vgs |
11mOhm @ 7A, 4.5V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 5V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
16 ns |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
30V |
| Power Dissipation |
2.5W |
| Drain to Source Resistance |
11mOhm |
| Rds On Max |
11 mΩ |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF7805QTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2014 |
| Configuration |
Single |
| Max Power Dissipation |
2.5W |
| Min Operating Temperature |
-55°C |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Operating Mode |
ENHANCEMENT MODE |
| Series |
HEXFET® |
| Packaging |
Cut Tape (CT) |
| Turn Off Delay Time |
38 ns |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Number of Pins |
8 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Turn On Delay Time |
16 ns |
| Gate to Source Voltage (Vgs) |
12V |
| RoHS Status |
RoHS Compliant |
| Radiation Hardening |
No |
| Width |
3.9878mm |
| Length |
4.9784mm |
| Height |
1.4986mm |
| Drain to Source Breakdown Voltage |
30V |
| Continuous Drain Current (ID) |
13A |
| Power Dissipation |
2.5W |
| Fall Time (Typ) |
16 ns |
| Rise Time |
20ns |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 5V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 7A, 4.5V |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF7807D1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Surface Mount |
YES |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Operating Temperature (Max.) |
150°C |
| Power Dissipation (Max) |
2.5W Tc |
| Packaging |
Tube |
| Published |
1999 |
| Series |
FETKY™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 7A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Drain Current-Max (Abs) (ID) |
8.3A |
| FET Feature |
Schottky Diode (Isolated) |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7807D1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2004 |
| Series |
FETKY™ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
25MOhm |
| Voltage - Rated DC |
30V |
| Current Rating |
8.3A |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 7A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 5V |
| Vgs (Max) |
±12V |
| Forward Voltage |
500mV |
| Continuous Drain Current (ID) |
8.3A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
12V |
| Forward Current |
3.5A |
| Power Dissipation |
2.5W |
| FET Feature |
Schottky Diode (Isolated) |
| Nominal Vgs |
1 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF7807D1TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Power Dissipation (Max) |
2.5W Ta |
| Current Rating |
8.3A |
| Mount |
Surface Mount |
| Published |
2004 |
| Series |
FETKY™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
30V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 7A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 5V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
8.3A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| FET Feature |
Schottky Diode (Isolated) |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7807VD2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Series |
FETKY™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
25mOhm @ 7A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| FET Feature |
Schottky Diode (Isolated) |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7807VD2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
1.1 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Turn On Delay Time |
6.3 ns |
| Mount |
Surface Mount |
| Series |
FETKY™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
25MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Current Rating |
8.3A |
| Power Dissipation |
2.5W |
| Packaging |
Tube |
| Forward Current |
3.7A |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Rise Time |
1.2ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Forward Voltage |
540mV |
| Fall Time (Typ) |
2.2 ns |
| Continuous Drain Current (ID) |
8.3A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
25mOhm @ 7A, 4.5V |
| FET Feature |
Schottky Diode (Isolated) |
| Drain to Source Resistance |
25mOhm |
| Rds On Max |
25 mΩ |
| Nominal Vgs |
1 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF7807ZTR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Published |
2005 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
770pF @ 15V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13.8m Ω @ 11A, 10V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
11A |
| Drain-source On Resistance-Max |
0.0138Ohm |
| DS Breakdown Voltage-Min |
30V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRF7822PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
18A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
22 ns |
| Turn On Delay Time |
15 ns |
| Mount |
Surface Mount |
| Published |
2001 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Current Rating |
18A |
| Row Spacing |
6.3 mm |
| Power Dissipation |
3.1W |
| Operating Temperature |
-55°C~150°C TJ |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Input Capacitance (Ciss) (Max) @ Vds |
5500pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 5V |
| Rise Time |
5.5ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
18A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
12V |
| Rds On (Max) @ Id, Vgs |
6.5mOhm @ 15A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance |
5.5nF |
| Drain to Source Resistance |
6.5mOhm |
| Rds On Max |
6.5 mΩ |
| Nominal Vgs |
1 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |