Showing 1849–1860 of 7598 results
Infineon Technologies IRF7834PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
18 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
19A |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Continuous Drain Current (ID) |
19A |
| Power Dissipation |
2.5W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3710pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 4.5V |
| Rise Time |
14.3ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0045Ohm |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
25 mJ |
| Nominal Vgs |
2.25 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
13.7 ns |
| Lead Free |
Lead Free |
Infineon Technologies IRF7854PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~150°C TJ |
| FET Type |
N-Channel |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
13.4MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Output Current |
2.5A |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
9.4 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Dual Supply Voltage |
80V |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
8.5ns |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.6 ns |
| Continuous Drain Current (ID) |
10A |
| Threshold Voltage |
4.9V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Input Capacitance |
1.62nF |
| Recovery Time |
65 ns |
| Rds On (Max) @ Id, Vgs |
13.4mOhm @ 10A, 10V |
| Drain to Source Resistance |
13.4mOhm |
| Rds On Max |
13.4 mΩ |
| Nominal Vgs |
4.9 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1620pF @ 25V |
| Lead Free |
Lead Free |
Infineon Technologies IRF7855PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Power Dissipation |
97mW |
| Turn Off Delay Time |
16 ns |
| Packaging |
Tube |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
9.4MOhm |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Threshold Voltage |
4.9V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Rise Time |
13ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Turn On Delay Time |
8.7 ns |
| Recovery Time |
50 ns |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
9.4m Ω @ 12A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRF8304MTR1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
19 ns |
| Package / Case |
DirectFET™ Isometric MX |
| Number of Pins |
7 |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
28A Ta 170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Min Operating Temperature |
-40°C |
| Power Dissipation (Max) |
2.8W Ta 100W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
16 ns |
| Rds On (Max) @ Id, Vgs |
2.2mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 4.5V |
| Rise Time |
22ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
170A |
| Power Dissipation |
2.8W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
4.7nF |
| Drain to Source Resistance |
3.2mOhm |
| Rds On Max |
2.2 mΩ |
| Radiation Hardening |
No |
| FET Type |
N-Channel |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF8714TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| JESD-609 Code |
e3 |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
8.7MOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Ta |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Turn-Off Delay Time |
11 ns |
| Continuous Drain Current (ID) |
14A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.7m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1020pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
14A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
9.9ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Turn On Delay Time |
10 ns |
| Power Dissipation |
2.5W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
65 mJ |
| Nominal Vgs |
1.8 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRF8721GPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
8.1 ns |
| FET Type |
N-Channel |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
8.2 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
1.04nF |
| Drain to Source Resistance |
12.5mOhm |
| Rds On (Max) @ Id, Vgs |
8.5mOhm @ 14A, 10V |
| Rds On Max |
8.5 mΩ |
| Nominal Vgs |
2.35 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Input Capacitance (Ciss) (Max) @ Vds |
1040pF @ 15V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRF8721GTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
8.1 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Rise Time |
11ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
8.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1040pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Terminal Form |
GULL WING |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF9332TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
73 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Finish |
Matte Tin (Sn) |
| Input Capacitance (Ciss) (Max) @ Vds |
1270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
17.5m Ω @ 9.8A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 25μA |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Rise Time |
47ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
58 ns |
| Continuous Drain Current (ID) |
9.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF9388PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V 20V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Packaging |
Tube |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
80 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Turn On Delay Time |
19 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 12A, 20V |
| Vgs(th) (Max) @ Id |
2.4V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1680pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Rise Time |
57ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Fall Time (Typ) |
66 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Length |
4.9784mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRF9392TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
73 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V 20V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
17 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Finish |
Matte Tin (Sn) |
| Input Capacitance (Ciss) (Max) @ Vds |
1270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.1m Ω @ 7.8A, 20V |
| Vgs(th) (Max) @ Id |
2.4V @ 25μA |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Rise Time |
47ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
58 ns |
| Continuous Drain Current (ID) |
9.8A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
-30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF9393PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V 20V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
55 ns |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
44ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
16 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13.3m Ω @ 9.2A, 20V |
| Vgs(th) (Max) @ Id |
2.4V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1110pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
49 ns |
| Continuous Drain Current (ID) |
9.2A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
75A |
| Length |
5mm |
| Radiation Hardening |
No |
| Power Dissipation |
2.5W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRF9530NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
200mOhm |
| Voltage - Rated DC |
-100V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
79W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
79W |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
15 ns |
| Threshold Voltage |
-4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 8.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
760pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
14A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Rise Time |
58ns |
| Drain to Source Voltage (Vdss) |
100V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Turn-Off Delay Time |
45 ns |
| Continuous Drain Current (ID) |
-14A |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
56A |
| Dual Supply Voltage |
-100V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Recovery Time |
190 ns |
| Nominal Vgs |
-4 V |
| Height |
15.24mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |