Showing 1861–1872 of 7598 results
Infineon Technologies IRF9540NSTRR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 140W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
-100V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Published |
2003 |
| Current Rating |
-23A |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
97nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
117m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
67ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
23A |
| Drain-source On Resistance-Max |
0.117Ohm |
| Pulsed Drain Current-Max (IDM) |
92A |
| Avalanche Energy Rating (Eas) |
84 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IRF9Z24NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
Through Hole |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
P-Channel |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
175mOhm |
| Voltage - Rated DC |
-55V |
| Current Rating |
-12A |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
45W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
45W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 7.2A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
12A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
55ns |
| Drain to Source Voltage (Vdss) |
55V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Turn-Off Delay Time |
23 ns |
| Continuous Drain Current (ID) |
-12A |
| Threshold Voltage |
-4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-55V |
| Transistor Application |
SWITCHING |
| Pulsed Drain Current-Max (IDM) |
48A |
| Dual Supply Voltage |
-55V |
| Avalanche Energy Rating (Eas) |
96 mJ |
| Recovery Time |
71 ns |
| Nominal Vgs |
-4 V |
| Height |
15.24mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Lead Free |
Lead Free |
Infineon Technologies IRF9Z34NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
DRAIN |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
100mOhm |
| Voltage - Rated DC |
-55V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-19A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
68W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
56W |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
-4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
19A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
55ns |
| Drain to Source Voltage (Vdss) |
55V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
41 ns |
| Turn-Off Delay Time |
30 ns |
| Continuous Drain Current (ID) |
-19A |
| FET Type |
P-Channel |
| Turn On Delay Time |
13 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-55V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Dual Supply Voltage |
-55V |
| Recovery Time |
82 ns |
| Nominal Vgs |
-4 V |
| Height |
8.77mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
Infineon Technologies IRFB3206PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3MOhm |
| Voltage - Rated DC |
60V |
| Current Rating |
210A |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
300W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Part Status |
Active |
| Turn On Delay Time |
19 ns |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6540pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
120A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
82ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
83 ns |
| Turn-Off Delay Time |
55 ns |
| Continuous Drain Current (ID) |
210A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
840A |
| Recovery Time |
50 ns |
| Max Junction Temperature (Tj) |
175°C |
| Height |
19.8mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFB3256PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
55 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
300W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
64 ns |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6600pF @ 48V |
| Gate Charge (Qg) (Max) @ Vgs |
195nC @ 10V |
| Rise Time |
77ns |
| Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
4V |
| Drain to Source Breakdown Voltage |
60V |
| Height |
9.02mm |
| Length |
10.67mm |
| Width |
4.83mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFB3306GPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Element Configuration |
Single |
| Factory Lead Time |
10 Weeks |
| Packaging |
Tube |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Turn Off Delay Time |
40 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
77 ns |
| Continuous Drain Current (ID) |
160A |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4520pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
76ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
620A |
| Nominal Vgs |
4 V |
| Height |
16.51mm |
| Length |
10.668mm |
| Width |
4.826mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFB3307PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
51 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
200W |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
6.3MOhm |
| Voltage - Rated DC |
75V |
| Current Rating |
130A |
| Lead Pitch |
2.54mm |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
26 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5150pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
120ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
63 ns |
| Continuous Drain Current (ID) |
130A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
75V |
| Dual Supply Voltage |
75V |
| Avalanche Energy Rating (Eas) |
270 mJ |
| Nominal Vgs |
4 V |
| Height |
4.82mm |
| Length |
10.6426mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRFB3407ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
230W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.4m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4750pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFB3507PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
52 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
97A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Voltage - Rated DC |
75V |
| Mount |
Through Hole |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation (Max) |
190W Tc |
| Current Rating |
97A |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
49 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.8mOhm @ 58A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3540pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
81ns |
| Drain to Source Voltage (Vdss) |
75V |
| Power Dissipation |
190W |
| Turn On Delay Time |
20 ns |
| Continuous Drain Current (ID) |
97A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Input Capacitance |
3.54nF |
| Drain to Source Resistance |
7mOhm |
| Rds On Max |
8.8 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFB3607PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET® |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
9MOhm |
| Number of Elements |
1 |
| Power Dissipation-Max |
140W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
140W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance (Ciss) (Max) @ Vds |
3070pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Rise Time |
110ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
96 ns |
| Turn-Off Delay Time |
43 ns |
| Continuous Drain Current (ID) |
80A |
| Threshold Voltage |
4V |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 46A, 10V |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
75V |
| Dual Supply Voltage |
75V |
| Recovery Time |
50 ns |
| Nominal Vgs |
4 V |
| Height |
9.017mm |
| Length |
10.6426mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Lead Free |
Lead Free |
Infineon Technologies IRFB4115PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Turn On Delay Time |
18 ns |
| Factory Lead Time |
12 Weeks |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Peak Reflow Temperature (Cel) |
250 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
380W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
380W |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5270pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
104A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
73ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
39 ns |
| Turn-Off Delay Time |
41 ns |
| Continuous Drain Current (ID) |
104A |
| Threshold Voltage |
5V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 62A, 10V |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
420A |
| Dual Supply Voltage |
150V |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
5 V |
| Height |
19.8mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFB4137PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
34 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
69MOhm |
| Power Dissipation (Max) |
341W Tc |
| Power Dissipation |
341W |
| Continuous Drain Current (ID) |
38A |
| Threshold Voltage |
5V |
| Rds On (Max) @ Id, Vgs |
69m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5168pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
125nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
300V |
| Height |
9.02mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |