Showing 1873–1884 of 7598 results
Infineon Technologies IRFB41N15DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
200W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
41A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2003 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
150V |
| Current Rating |
41A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.045Ohm |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2520pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
63ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
41A |
| Threshold Voltage |
5.5V |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
16 ns |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
150V |
| Dual Supply Voltage |
150V |
| Avalanche Energy Rating (Eas) |
470 mJ |
| Recovery Time |
260 ns |
| Nominal Vgs |
5.5 V |
| Height |
8.763mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFB4229PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Active |
| Transistor Application |
SWITCHING |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
46MOhm |
| Number of Elements |
1 |
| Power Dissipation-Max |
330W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330mW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C |
46A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
31ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Turn-Off Delay Time |
30 ns |
| Continuous Drain Current (ID) |
46A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
250V |
| Rds On (Max) @ Id, Vgs |
46m Ω @ 26A, 10V |
| Dual Supply Voltage |
250V |
| Recovery Time |
290 ns |
| Nominal Vgs |
5 V |
| Height |
16.51mm |
| Length |
10.6426mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
4560pF @ 25V |
| Lead Free |
Lead Free |
Infineon Technologies IRFB4233PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
370W Tc |
| Power Dissipation |
370W |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-40°C |
| Element Configuration |
Single |
| Turn Off Delay Time |
51 ns |
| Turn On Delay Time |
31 ns |
| Drain to Source Breakdown Voltage |
230V |
| Dual Supply Voltage |
276V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5510pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Drain to Source Voltage (Vdss) |
230V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
56A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
37mOhm @ 28A, 10V |
| Input Capacitance |
5.51nF |
| Drain to Source Resistance |
37mOhm |
| Rds On Max |
37 mΩ |
| Nominal Vgs |
5 V |
| Height |
16.51mm |
| Length |
10.6426mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFB4310ZGPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
20 ns |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
55 ns |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
250W |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
6.86nF |
| Input Capacitance (Ciss) (Max) @ Vds |
6860pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
60ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
57 ns |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
6mOhm @ 75A, 10V |
| FET Type |
N-Channel |
| Drain to Source Resistance |
6mOhm |
| Rds On Max |
6 mΩ |
| Nominal Vgs |
4 V |
| Height |
16.51mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFB4410ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
Through Hole |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
16 ns |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
9MOhm |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Peak Reflow Temperature (Cel) |
250 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
230W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| Number of Terminations |
3 |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
97A |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4820pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
97A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
52ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
57 ns |
| Turn-Off Delay Time |
43 ns |
| Continuous Drain Current (ID) |
96A |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-220AB |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 58A, 10V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
242 mJ |
| Recovery Time |
57 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
19.8mm |
| Length |
10.6426mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFB4710PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2001 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 200W Tc |
| Turn Off Delay Time |
41 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Current Rating |
75A |
| Factory Lead Time |
12 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
14mOhm |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Voltage - Rated DC |
100V |
| Peak Reflow Temperature (Cel) |
250 |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
38 ns |
| Continuous Drain Current (ID) |
75A |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6160pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
130ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
5.5V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Recovery Time |
110 ns |
| Nominal Vgs |
5.5 V |
| Height |
8.77mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFB5620PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
144W Tc |
| Turn On Delay Time |
8.6 ns |
| Turn Off Delay Time |
17.1 ns |
| Packaging |
Tube |
| Published |
2007 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Resistance |
72.5MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
144W |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Drain to Source Breakdown Voltage |
200V |
| Rds On (Max) @ Id, Vgs |
72.5mOhm @ 15A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1710pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Rise Time |
14.6ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.9 ns |
| Continuous Drain Current (ID) |
25A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
20V |
| Dual Supply Voltage |
200V |
| Input Capacitance |
1.71nF |
| FET Type |
N-Channel |
| Drain to Source Resistance |
72.5mOhm |
| Rds On Max |
72.5 mΩ |
| Nominal Vgs |
5 V |
| Height |
9.02mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Lead Free |
Lead Free |
Infineon Technologies IRFB7430GPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Mount |
Through Hole |
| FET Type |
N-Channel |
| Max Power Dissipation |
375W |
| Rds On (Max) @ Id, Vgs |
1.3mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
460nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
195A |
| Input Capacitance |
14.24nF |
| Rds On Max |
1.3 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFB7434GPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Packaging |
Tube |
| Published |
2012 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
294W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.6mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10820pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
324nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
195A |
| Input Capacitance |
10.82nF |
| Rds On Max |
1.6 mΩ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFB7437PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Series |
HEXFET®, StrongIRFET™ |
| FET Type |
N-Channel |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2MOhm |
| Number of Elements |
1 |
| Power Dissipation-Max |
230W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| Part Status |
Active |
| Transistor Application |
SWITCHING |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Input Capacitance (Ciss) (Max) @ Vds |
7330pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
195A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
225nC @ 10V |
| Rise Time |
70ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
53 ns |
| Turn-Off Delay Time |
78 ns |
| Continuous Drain Current (ID) |
195A |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 150μA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Recovery Time |
30 ns |
| Nominal Vgs |
3 V |
| Height |
16.51mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFB7440GPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
10 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
208W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4730pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFB7446GPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
99W Tc |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Factory Lead Time |
14 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3183pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
93nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| RoHS Status |
ROHS3 Compliant |