Showing 1885–1896 of 7598 results
Infineon Technologies IRFB7537PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
173A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Element Configuration |
Single |
| Turn Off Delay Time |
82 ns |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
173A |
| Power Dissipation |
230W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
210nC @ 10V |
| Rise Time |
105ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
84 ns |
| Threshold Voltage |
3.7V |
| JEDEC-95 Code |
TO-220AB |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
700A |
| Avalanche Energy Rating (Eas) |
554 mJ |
| Height |
16.51mm |
| Length |
10.67mm |
| Width |
4.83mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
15 ns |
| Lead Free |
Lead Free |
Infineon Technologies IRFB812PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
78W Tc |
| Power Dissipation |
78W |
| Turn Off Delay Time |
24 ns |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
2.2Ohm |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
15 Weeks |
| Threshold Voltage |
3V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.2 Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
810pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
22ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
3.6A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
14 ns |
| Drain to Source Breakdown Voltage |
500V |
| Recovery Time |
110 ns |
| Height |
16.51mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
Infineon Technologies IRFH3702TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (3×3) |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta 42A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
11 ns |
| Packaging |
Cut Tape (CT) |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Published |
2010 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
7.1MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
2.8W |
| Element Configuration |
Single |
| Power Dissipation |
2.8W |
| Turn On Delay Time |
9.6 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Recovery Time |
26 ns |
| Drain to Source Resistance |
7.1mOhm |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
5.8 ns |
| Continuous Drain Current (ID) |
16A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
1.51nF |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Rds On (Max) @ Id, Vgs |
7.1mOhm @ 16A, 10V |
| Rds On Max |
7.1 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
939.8μm |
| Length |
2.9972mm |
| Width |
2.9972mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1510pF @ 15V |
| Lead Free |
Lead Free |
Infineon Technologies IRFH3707TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (3×3) |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 29A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta |
| Turn Off Delay Time |
9.9 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
12.4MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
2.8W |
| Turn On Delay Time |
7.8 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance |
755pF |
| Recovery Time |
30 ns |
| Gate Charge (Qg) (Max) @ Vgs |
8.1nC @ 4.5V |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.6 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Rds On (Max) @ Id, Vgs |
12.4mOhm @ 12A, 10V |
| Drain to Source Resistance |
12.4mOhm |
| Rds On Max |
12.4 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
939.8μm |
| Length |
2.9972mm |
| Width |
2.9972mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
755pF @ 15V |
| Lead Free |
Lead Free |
Infineon Technologies IRFH4234TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
8 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
5 |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation |
3.5W |
| Contact Plating |
Copper, Silver, Tin |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Power Dissipation (Max) |
3.5W Ta 27W Tc |
| Turn On Delay Time |
7.8 ns |
| Continuous Drain Current (ID) |
22A |
| Threshold Voltage |
1.6V |
| Vgs(th) (Max) @ Id |
2.1V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1011pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.3 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.6m Ω @ 30A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
60A |
| Height |
900μm |
| Length |
6mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5015TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta 56A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
14 ns |
| Packaging |
Cut Tape (CT) |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Published |
2013 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
31MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Power Dissipation |
3.6W |
| Turn On Delay Time |
9.4 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance |
2.3nF |
| Recovery Time |
78 ns |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
9.7ns |
| Drain to Source Voltage (Vdss) |
150V |
| Fall Time (Typ) |
3.4 ns |
| Continuous Drain Current (ID) |
56A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Vgs(th) (Max) @ Id |
5V @ 150μA |
| Rds On (Max) @ Id, Vgs |
31mOhm @ 34A, 10V |
| Drain to Source Resistance |
31mOhm |
| Rds On Max |
31 mΩ |
| Nominal Vgs |
5 V |
| Height |
990.6μm |
| Length |
6.1468mm |
| Width |
5.15mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
2300pF @ 50V |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5020TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
DRAIN |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
55MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| JESD-30 Code |
R-PDSO-N5 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Power Dissipation-Max |
3.6W Ta 8.3W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.6W |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
55m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2290pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C |
5.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Rise Time |
7.7ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Turn-Off Delay Time |
21 ns |
| Continuous Drain Current (ID) |
5.1A |
| FET Type |
N-Channel |
| Turn On Delay Time |
9.3 ns |
| Drain Current-Max (Abs) (ID) |
43A |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
63A |
| Avalanche Energy Rating (Eas) |
320 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.05mm |
| Length |
6mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5053TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
8.6 ns |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PQFN (5×6) Single Die |
| Current - Continuous Drain (Id) @ 25℃ |
9.3A Ta 46A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
18 ns |
| Published |
2008 |
| Series |
HEXFET® |
| Packaging |
Cut Tape (CT) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.1W |
| Element Configuration |
Single |
| Power Dissipation |
3.1W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
1.51nF |
| Input Capacitance (Ciss) (Max) @ Vds |
1510pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
7.5ns |
| Drain to Source Voltage (Vdss) |
100V |
| Fall Time (Typ) |
4.1 ns |
| Continuous Drain Current (ID) |
9.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
18mOhm @ 9.3A, 10V |
| FET Type |
N-Channel |
| Drain to Source Resistance |
18mOhm |
| Rds On Max |
18 mΩ |
| Height |
939.8μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5106TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 114W Tc |
| Turn Off Delay Time |
23 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Operating Mode |
ENHANCEMENT MODE |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| JESD-30 Code |
R-PDSO-N5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Threshold Voltage |
2V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.6m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3090pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
13ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.5 ns |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0056Ohm |
| Power Dissipation |
114W |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
96 mJ |
| Nominal Vgs |
2 V |
| Height |
838.2μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Turn On Delay Time |
8.1 ns |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5204TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Package / Case |
8-VQFN Exposed Pad |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 105W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
18 ns |
| Published |
2011 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| JESD-30 Code |
R-PDSO-N5 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.3 ns |
| Turn On Delay Time |
8.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.3m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2460pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
14ns |
| Power Dissipation |
105W |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
22A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0043Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Nominal Vgs |
4 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Case Connection |
DRAIN |
| RoHS Status |
RoHS Compliant |