Showing 1897–1908 of 7598 results
Infineon Technologies IRFH5206TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PDSO-N5 |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta 89A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 100W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2007 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
6.7MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
8.2 ns |
| Continuous Drain Current (ID) |
89A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.7m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2490pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
350A |
| Height |
838.2μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Power Dissipation |
3.6W |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5207TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta 71A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
20 ns |
| Packaging |
Cut Tape (CT) |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Power Dissipation |
3.6W |
| Turn On Delay Time |
7.2 ns |
| Published |
2007 |
| Rds On (Max) @ Id, Vgs |
9.6mOhm @ 43A, 10V |
| Input Capacitance |
2.474nF |
| Recovery Time |
39 ns |
| Gate Charge (Qg) (Max) @ Vgs |
59nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
75V |
| Fall Time (Typ) |
7.1 ns |
| Continuous Drain Current (ID) |
71A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2474pF @ 25V |
| Drain to Source Resistance |
9.6mOhm |
| Rds On Max |
9.6 mΩ |
| Nominal Vgs |
2 V |
| Height |
838.2μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFH5207TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta 71A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 105W Tc |
| JESD-30 Code |
R-PDSO-N5 |
| Turn Off Delay Time |
20 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
9.6MOhm |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Contact Plating |
Tin |
| Rise Time |
12ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.6m Ω @ 43A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2474pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
59nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7.1 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
71A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Height |
838.2μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Power Dissipation |
3.6W |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5220TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Package / Case |
8-VQFN Exposed Pad |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Ta 20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 8.3W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
14 ns |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| JESD-30 Code |
R-PDSO-N5 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.4 ns |
| Turn On Delay Time |
7.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99.9m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1380pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
4.7ns |
| Power Dissipation |
3.6W |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
3.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain-source On Resistance-Max |
0.0999Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
47A |
| Avalanche Energy Rating (Eas) |
290 mJ |
| Radiation Hardening |
No |
| Case Connection |
DRAIN |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFH5250DTR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
40A Ta 100A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
23 ns |
| Packaging |
Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs |
1.4mOhm @ 50A, 10V |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Power Dissipation |
250W |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance |
706pF |
| Input Capacitance (Ciss) (Max) @ Vds |
6115pF @ 13V |
| Rise Time |
72ns |
| Drain to Source Voltage (Vdss) |
25V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
25V |
| Recovery Time |
41 ns |
| Drain to Source Resistance |
2.2mOhm |
| Vgs(th) (Max) @ Id |
2.35V @ 150μA |
| Rds On Max |
1.4 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
838.2μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Gate Charge (Qg) (Max) @ Vgs |
83nC @ 10V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFH5255TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 51A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 26W Tc |
| Turn Off Delay Time |
6.5 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Surface Mount |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
6MOhm |
| Terminal Position |
DUAL |
| JESD-30 Code |
R-PDSO-N5 |
| Operating Temperature |
-55°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
3.8 ns |
| Continuous Drain Current (ID) |
51A |
| Turn On Delay Time |
7.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
988pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
14.5nC @ 10V |
| Rise Time |
10.7ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
3.6W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Avalanche Energy Rating (Eas) |
53 mJ |
| Height |
838.2μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5301TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PQFN (5×6) Single Die |
| Current - Continuous Drain (Id) @ 25℃ |
35A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 110W Tc |
| Turn On Delay Time |
21 ns |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
1.85MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
110W |
| Turn Off Delay Time |
22 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
5.114nF |
| Input Capacitance (Ciss) (Max) @ Vds |
5114pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
77nC @ 10V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
1.85mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Drain to Source Resistance |
1.55mOhm |
| Rds On Max |
1.85 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
850μm |
| Length |
6mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5302DTR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PQFN (5×6) Single Die |
| Current - Continuous Drain (Id) @ 25℃ |
29A Ta 100A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
20 ns |
| Packaging |
Cut Tape (CT) |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Power Dissipation |
104W |
| Turn On Delay Time |
16 ns |
| Published |
2010 |
| Rds On (Max) @ Id, Vgs |
2.5mOhm @ 50A, 10V |
| Input Capacitance |
3.635nF |
| Recovery Time |
29 ns |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
2.35V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3635pF @ 25V |
| Drain to Source Resistance |
2.5mOhm |
| Rds On Max |
2.5 mΩ |
| Nominal Vgs |
2.35 V |
| Height |
838.2μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFH5302TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2009 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PQFN (5×6) Single Die |
| Current - Continuous Drain (Id) @ 25℃ |
32A Ta 100A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~150°C TJ |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Power Dissipation |
100W |
| Turn On Delay Time |
18 ns |
| Packaging |
Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs |
2.1mOhm @ 50A, 10V |
| Input Capacitance |
4.4nF |
| Recovery Time |
29 ns |
| Gate Charge (Qg) (Max) @ Vgs |
76nC @ 10V |
| Rise Time |
51ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4400pF @ 15V |
| Drain to Source Resistance |
2.1mOhm |
| Rds On Max |
2.1 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
810μm |
| Length |
5mm |
| Width |
6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH5303TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
23A Ta 82A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 46W Tc |
| Turn On Delay Time |
11 ns |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
3.6W |
| Turn Off Delay Time |
8.8 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
2.19nF |
| Input Capacitance (Ciss) (Max) @ Vds |
2190pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
31ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.1 ns |
| Continuous Drain Current (ID) |
23A |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
4.2mOhm @ 49A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 50μA |
| Recovery Time |
29 ns |
| Drain to Source Resistance |
4.2mOhm |
| Rds On Max |
4.2 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
838.2μm |
| Length |
5.9944mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFH5304TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta 79A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
12 ns |
| Packaging |
Cut Tape (CT) |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Power Dissipation |
46W |
| Turn On Delay Time |
13 ns |
| Published |
2010 |
| Rds On (Max) @ Id, Vgs |
4.5mOhm @ 47A, 10V |
| Input Capacitance |
1.65nF |
| Recovery Time |
29 ns |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
6.6 ns |
| Continuous Drain Current (ID) |
79A |
| Threshold Voltage |
2.35V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2360pF @ 10V |
| Drain to Source Resistance |
4.5mOhm |
| Rds On Max |
4 mΩ |
| Nominal Vgs |
2.35 V |
| Height |
810μm |
| Length |
5mm |
| Width |
5.0038mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFH5306TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PQFN (5×6) Single Die |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 44A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
9.1 ns |
| Packaging |
Cut Tape (CT) |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
8.1MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Power Dissipation |
3.6W |
| Turn On Delay Time |
9 ns |
| Published |
2013 |
| Rds On (Max) @ Id, Vgs |
8.1mOhm @ 15A, 10V |
| Input Capacitance |
1.125nF |
| Recovery Time |
26 ns |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
26ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
6.1 ns |
| Continuous Drain Current (ID) |
44A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1125pF @ 15V |
| Drain to Source Resistance |
8.1mOhm |
| Rds On Max |
8.1 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
900μm |
| Length |
6mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |