Showing 1909–1920 of 7598 results
Infineon Technologies IRFH5406TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Rds On (Max) @ Id, Vgs |
14.4mOhm @ 24A, 10V |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta 40A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
12 ns |
| Packaging |
Cut Tape (CT) |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Published |
2011 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Power Dissipation |
3.6W |
| Turn On Delay Time |
5.4 ns |
| FET Type |
N-Channel |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Recovery Time |
30 ns |
| Drain to Source Resistance |
14.4mOhm |
| Rise Time |
8.7ns |
| Drain to Source Voltage (Vdss) |
60V |
| Fall Time (Typ) |
3.5 ns |
| Continuous Drain Current (ID) |
40A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Input Capacitance |
1.256nF |
| Input Capacitance (Ciss) (Max) @ Vds |
1256pF @ 25V |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Rds On Max |
2.3 mΩ |
| Nominal Vgs |
2 V |
| Height |
810μm |
| Length |
5mm |
| Width |
5.0038mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFH7107TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta 75A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
20 ns |
| Power Dissipation |
3.6W |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
8.5MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Packaging |
Digi-Reel® |
| Turn On Delay Time |
9.1 ns |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3110pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
75V |
| Fall Time (Typ) |
6.5 ns |
| Continuous Drain Current (ID) |
14A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.5mOhm @ 45A, 10V |
| Drain to Source Breakdown Voltage |
75V |
| Input Capacitance |
3.11nF |
| Recovery Time |
42 ns |
| Drain to Source Resistance |
8.5mOhm |
| Rds On Max |
8.5 mΩ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH7110TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-TQFN Exposed Pad |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta 58A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.6W Ta 104W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| JESD-30 Code |
R-PDSO-F5 |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Fall Time (Typ) |
18 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13.5m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Rise Time |
23ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
11A |
| Threshold Voltage |
3V |
| Power Dissipation |
3.6W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
50A |
| Pulsed Drain Current-Max (IDM) |
240A |
| Nominal Vgs |
3 V |
| Height |
1.17mm |
| Length |
5.85mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
11 ns |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFH7440TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
85A Tc |
| Packaging |
Digi-Reel® |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4574pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
138nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
Infineon Technologies IRFH7787TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
68A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
83W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn Off Delay Time |
53 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Drain to Source Voltage (Vdss) |
75V |
| Element Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 41A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4030pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
68A |
| Gate to Source Voltage (Vgs) |
20V |
| Height |
1.17mm |
| Length |
6.15mm |
| Width |
5.1mm |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
7.3 ns |
| Lead Free |
Lead Free |
Infineon Technologies IRFH7885TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-VQFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
FASTIRFET™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
3.6W Ta 156W Tc |
| Terminal Form |
NO LEAD |
| Vgs(th) (Max) @ Id |
3.6V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2311pF @ 40V |
| JESD-30 Code |
R-PDSO-N5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.9m Ω @ 50A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
22A |
| Drain-source On Resistance-Max |
0.0039Ohm |
| Pulsed Drain Current-Max (IDM) |
250A |
| Avalanche Energy Rating (Eas) |
202 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFH7914TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 35A Tc |
| Turn Off Delay Time |
12 ns |
| Packaging |
Cut Tape (CT) |
| Published |
2008 |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
8.7MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.1W |
| Element Configuration |
Single |
| Power Dissipation |
3.1W |
| Turn On Delay Time |
11 ns |
| Series |
HEXFET® |
| Rds On (Max) @ Id, Vgs |
8.7mOhm @ 14A, 10V |
| Recovery Time |
21 ns |
| Drain to Source Resistance |
8.7mOhm |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
1.16nF |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1160pF @ 15V |
| Rds On Max |
8.7 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
950μm |
| Length |
5.2324mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH7914TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Base Part Number |
IRFH7914 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
12 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
8.7MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
35A |
| Power Dissipation |
3.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.7m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1160pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PDSO-N3 |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Nominal Vgs |
1.8 V |
| Height |
1.1684mm |
| Length |
5.2324mm |
| Width |
6.1468mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IRFH7921TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
3.1W |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 34A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
14 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
8.5MOhm |
| Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain Current-Max (Abs) (ID) |
34A |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1210pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Rise Time |
7.6ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.7 ns |
| Continuous Drain Current (ID) |
15mA |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Turn On Delay Time |
12 ns |
| Dual Supply Voltage |
30V |
| Nominal Vgs |
1.8 V |
| Height |
1.1684mm |
| Length |
5.2324mm |
| Width |
6.2484mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 15A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFH7923TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 33A Tc |
| Packaging |
Cut Tape (CT) |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.7m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1095pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
Infineon Technologies IRFH7934TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
3.1W |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Ta 76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
14 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| JESD-30 Code |
R-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Drain Current-Max (Abs) (ID) |
76A |
| Drain-source On Resistance-Max |
0.0035Ohm |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 4.5V |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7.5 ns |
| Continuous Drain Current (ID) |
24A |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
12 ns |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
190A |
| Dual Supply Voltage |
30V |
| Avalanche Energy Rating (Eas) |
97 mJ |
| Nominal Vgs |
1.8 V |
| Height |
1.1684mm |
| Length |
5.2324mm |
| Width |
6.1468mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFH8311TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-TQFN Exposed Pad |
| Number of Pins |
8 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation |
3.6W |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Configuration |
Single |
| Power Dissipation-Max |
3.6W Ta 96W Tc |
| Published |
2007 |
| Turn On Delay Time |
21 ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Vgs(th) (Max) @ Id |
2.35V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4960pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
32A Ta 169A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
26ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.1m Ω @ 20A, 10V |
| Turn-Off Delay Time |
21 ns |
| Continuous Drain Current (ID) |
32A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |