Showing 1921–1932 of 7598 results
Infineon Technologies IRFH8325TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 82A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
14 ns |
| Packaging |
Cut Tape (CT) |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
5MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Power Dissipation |
3.6W |
| Turn On Delay Time |
12 ns |
| Published |
2013 |
| Rds On (Max) @ Id, Vgs |
5mOhm @ 20A, 10V |
| Input Capacitance |
2.487nF |
| Recovery Time |
24 ns |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Rise Time |
16ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
7.1 ns |
| Continuous Drain Current (ID) |
21A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2487pF @ 10V |
| Drain to Source Resistance |
5mOhm |
| Rds On Max |
5 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
1.17mm |
| Length |
5.85mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH8330TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
17A Ta 56A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
10 ns |
| Packaging |
Cut Tape (CT) |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Resistance |
6.6MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.3W |
| Element Configuration |
Single |
| Power Dissipation |
3.3W |
| Turn On Delay Time |
9.2 ns |
| Published |
2012 |
| Rds On (Max) @ Id, Vgs |
6.6mOhm @ 20A, 10V |
| Input Capacitance |
1.45nF |
| Recovery Time |
21 ns |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
5.7 ns |
| Continuous Drain Current (ID) |
17A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1450pF @ 25V |
| Drain to Source Resistance |
6.6mOhm |
| Rds On Max |
6.6 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
1.17mm |
| Length |
5.85mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH8334TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta 44A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
7 ns |
| Packaging |
Cut Tape (CT) |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Resistance |
9MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.2W |
| Element Configuration |
Single |
| Power Dissipation |
3.2W |
| Turn On Delay Time |
8.3 ns |
| Published |
2013 |
| Rds On (Max) @ Id, Vgs |
9mOhm @ 20A, 10V |
| Input Capacitance |
1.18nF |
| Recovery Time |
20 ns |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
14ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
14A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1180pF @ 10V |
| Drain to Source Resistance |
9mOhm |
| Rds On Max |
9 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
1.17mm |
| Length |
5.85mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFH8334TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta 44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta 30W Tc |
| Turn Off Delay Time |
7 ns |
| Terminal Form |
FLAT |
| Factory Lead Time |
12 Weeks |
| Published |
2007 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
14ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1180pF @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-F5 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.009Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
35 mJ |
| Nominal Vgs |
1.8 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFH8337TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta 27W Tc |
| Terminal Position |
DUAL |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Turn Off Delay Time |
5.7 ns |
| Terminal Form |
FLAT |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Rise Time |
12ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.8m Ω @ 16.2A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
790pF @ 10V |
| JESD-30 Code |
R-PDSO-F5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.1 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
65A |
| Nominal Vgs |
1.8 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFHM3911TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
FLAT |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.2A Ta 20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.8W Ta 29W Tc |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
92mOhm |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
115m Ω @ 6.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 35μA |
| Input Capacitance (Ciss) (Max) @ Vds |
760pF @ 50V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
20A |
| Threshold Voltage |
4V |
| Drain Current-Max (Abs) (ID) |
3.2A |
| Pulsed Drain Current-Max (IDM) |
36A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
41 mJ |
| REACH SVHC |
No SVHC |
| JESD-30 Code |
S-PDSO-F5 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFHM4231TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.7W Ta 29W Tc |
| Element Configuration |
Single |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Base Part Number |
IRFHM4231 |
| JESD-30 Code |
S-PDSO-N5 |
| Turn Off Delay Time |
12 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
22A |
| Threshold Voltage |
1.6V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 35μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1270pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
28ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.9 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.7 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0046Ohm |
| DS Breakdown Voltage-Min |
25V |
| Avalanche Energy Rating (Eas) |
42 mJ |
| Height |
900μm |
| Length |
3.3mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFHM7194TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
NO LEAD |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.3A Ta 34A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.8W Ta 37W Tc |
| Published |
2013 |
| Series |
FASTIRFET™, HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Resistance |
16.9mOhm |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
733pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16.4m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.6V @ 50μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
34A |
| Drain Current-Max (Abs) (ID) |
9.3A |
| Pulsed Drain Current-Max (IDM) |
95A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
220 mJ |
| JESD-30 Code |
S-PDSO-N5 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFHM8228TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 34W Tc |
| Turn Off Delay Time |
13 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
4.2mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| JESD-30 Code |
S-PDSO-F5 |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1667pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Rise Time |
22ns |
| Drain to Source Voltage (Vdss) |
25V |
| Fall Time (Typ) |
6.2 ns |
| Continuous Drain Current (ID) |
19A |
| Number of Channels |
1 |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
65A |
| Pulsed Drain Current-Max (IDM) |
260A |
| DS Breakdown Voltage-Min |
25V |
| Avalanche Energy Rating (Eas) |
50 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies IRFHM8235TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
S-PDSO-F5 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 30W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
7.5 ns |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
6.2mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.2 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.7m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1040pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
16ns |
| Number of Channels |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
16A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IRFHM831TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta 40A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
6.2 ns |
| Packaging |
Cut Tape (CT) |
| Published |
2013 |
| Series |
HEXFET® |
| Power Dissipation |
2.5W |
| Part Status |
Obsolete |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
2.5W |
| Terminal Position |
DUAL |
| JESD-30 Code |
S-PDSO-N5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
6.9 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.8m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Rise Time |
12ns |
| Fall Time (Typ) |
4.7 ns |
| Continuous Drain Current (ID) |
14A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Case Connection |
DRAIN |
| Avalanche Energy Rating (Eas) |
50 mJ |
| Recovery Time |
22 ns |
| Nominal Vgs |
1.8 V |
| Height |
990.6μm |
| Length |
3.2766mm |
| Width |
3.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| FET Type |
N-Channel |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFHM8329TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta 57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.6W Ta 33W Tc |
| JESD-30 Code |
S-PDSO-F5 |
| Factory Lead Time |
39 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Turn Off Delay Time |
14 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.1m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1710pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
74ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.6W |
| Continuous Drain Current (ID) |
16A |
| Threshold Voltage |
1.7V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
230A |
| Avalanche Energy Rating (Eas) |
43 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |