Showing 1933–1944 of 7598 results
Infineon Technologies IRFI3205PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Transistor Application |
SWITCHING |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Number of Terminations |
3 |
| Resistance |
8mOhm |
| Voltage - Rated DC |
55V |
| Current Rating |
64A |
| Number of Elements |
1 |
| Power Dissipation-Max |
63W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
63W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Drain Current-Max (Abs) (ID) |
56A |
| Drain to Source Breakdown Voltage |
55V |
| Current - Continuous Drain (Id) @ 25°C |
64A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
100ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
70 ns |
| Turn-Off Delay Time |
43 ns |
| Continuous Drain Current (ID) |
64A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 34A, 10V |
| Dual Supply Voltage |
55V |
| Avalanche Energy Rating (Eas) |
480 mJ |
| Recovery Time |
170 ns |
| Isolation Voltage |
2kV |
| Nominal Vgs |
4 V |
| Height |
9.8mm |
| Length |
10.7442mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 25V |
| Lead Free |
Lead Free |
Infineon Technologies IRFI7446GPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Not For New Designs |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
40.5W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Factory Lead Time |
17 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 48A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3199pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFIZ34NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
37W Tc |
| Turn Off Delay Time |
31 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
31W |
| Factory Lead Time |
12 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
60V |
| Current Rating |
20A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Packaging |
Tube |
| Case Connection |
ISOLATED |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.04Ohm |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
49ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
21A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
86 ns |
| Isolation Voltage |
2.5kV |
| Nominal Vgs |
20 V |
| Height |
9.8mm |
| Length |
10.6172mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFIZ44NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| FET Type |
N-Channel |
| Factory Lead Time |
12 Weeks |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
60V |
| Current Rating |
30A |
| Number of Elements |
1 |
| Power Dissipation-Max |
45W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
38W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
7.3 ns |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.024Ohm |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
31A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
69ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Turn-Off Delay Time |
47 ns |
| Continuous Drain Current (ID) |
31A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
98 ns |
| Isolation Voltage |
2.5kV |
| Nominal Vgs |
4 V |
| Height |
9.8mm |
| Length |
10.6172mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFL014NTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Number of Terminations |
4 |
| Resistance |
160mOhm |
| Voltage - Rated DC |
55V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
1.9A |
| JESD-30 Code |
R-PDSO-G4 |
| Number of Elements |
1 |
| Power Dissipation-Max |
1W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
1.9A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
1.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Rise Time |
7.1ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.3 ns |
| Turn-Off Delay Time |
12 ns |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
6.6 ns |
| Drain Current-Max (Abs) (ID) |
2.7A |
| Drain to Source Breakdown Voltage |
55V |
| Recovery Time |
61 ns |
| Nominal Vgs |
4 V |
| Height |
1.4478mm |
| Length |
6.6802mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
Infineon Technologies IRFL4310PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Ta |
| Additional Feature |
HIGH RELIABILITY |
| Factory Lead Time |
10 Weeks |
| Published |
1999 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 100kHz |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 100kHz |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
1.6A |
| Drain-source On Resistance-Max |
0.2Ohm |
| DS Breakdown Voltage-Min |
100V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFL4315PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Current - Continuous Drain (Id) @ 25℃ |
2.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.8W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
1999 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
185m Ω @ 1.6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
420pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFL4315TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1999 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Resistance |
185Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
150V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
2.6A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
2.8W Ta |
| Number of Terminations |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
2.6A |
| Turn On Delay Time |
8.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
185m Ω @ 1.6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
420pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
2.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
21ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
19 ns |
| Power Dissipation |
2.8W |
| Case Connection |
DRAIN |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
150V |
| Dual Supply Voltage |
150V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
5 V |
| Height |
1.8mm |
| Length |
6.6802mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFP1405PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
310W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
95A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
310W Tc |
| Turn Off Delay Time |
140 ns |
| Packaging |
Tube |
| Published |
2003 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
5.3Ohm |
| Voltage - Rated DC |
55V |
| Current Rating |
95A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.3m Ω @ 95A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
160ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
150 ns |
| Continuous Drain Current (ID) |
95A |
| Threshold Voltage |
4V |
| Turn On Delay Time |
12 ns |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
640A |
| Dual Supply Voltage |
55V |
| Nominal Vgs |
4 V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRFP140NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
1998 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
44 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Packaging |
Bulk |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
52mOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
100V |
| Current Rating |
27A |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
4V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
52m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
94nC @ 10V |
| Rise Time |
39ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
33 ns |
| Continuous Drain Current (ID) |
33A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Power Dissipation |
94W |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Recovery Time |
250 ns |
| Nominal Vgs |
4 V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
8.2 ns |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFP150MPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Power Dissipation |
160W |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
36MOhm |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn Off Delay Time |
45 ns |
| Turn On Delay Time |
11 ns |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
36m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
56ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
42A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
140A |
| Avalanche Energy Rating (Eas) |
420 mJ |
| Nominal Vgs |
4 V |
| Height |
21.1mm |
| Length |
16.129mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFP150NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
Through Hole |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
11 ns |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
36mOhm |
| Voltage - Rated DC |
100V |
| Current Rating |
42A |
| Lead Pitch |
5.45mm |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
160W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
140W |
| Case Connection |
DRAIN |
| Number of Terminations |
3 |
| FET Type |
N-Channel |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
42A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
56ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Turn-Off Delay Time |
45 ns |
| Continuous Drain Current (ID) |
42A |
| Threshold Voltage |
4V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
36m Ω @ 23A, 10V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
420 mJ |
| Recovery Time |
270 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
24.99mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |