Showing 1945–1956 of 7598 results
Infineon Technologies IRFP260MPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
17 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Peak Reflow Temperature (Cel) |
250 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Power Dissipation-Max |
300W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-247AC |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4057pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
50A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
234nC @ 10V |
| Rise Time |
60ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
48 ns |
| Turn-Off Delay Time |
55 ns |
| Continuous Drain Current (ID) |
50A |
| Transistor Application |
SWITCHING |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.04Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Avalanche Energy Rating (Eas) |
560 mJ |
| Height |
21.1mm |
| Length |
16.129mm |
| Width |
5.2mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 28A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFP3077PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2007 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
340W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
15 ns |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
3.3MOhm |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
340W |
| Case Connection |
DRAIN |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Drain Current-Max (Abs) (ID) |
200A |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9400pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
| Rise Time |
76ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
77 ns |
| Continuous Drain Current (ID) |
120A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
850A |
| FET Type |
N-Channel |
| Dual Supply Voltage |
75V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Recovery Time |
63 ns |
| Nominal Vgs |
4 V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 75A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFP3710PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Bulk |
| Published |
1998 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
100V |
| Current Rating |
57A |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
180W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.025Ohm |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
57A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Rise Time |
59ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
48 ns |
| Turn-Off Delay Time |
58 ns |
| Continuous Drain Current (ID) |
57A |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-247AC |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 28A, 10V |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Recovery Time |
320 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
24.99mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFP4127PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
341W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
21m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5380pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
75A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFP4137PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
34 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
69MOhm |
| Power Dissipation (Max) |
341W Tc |
| Power Dissipation |
341W |
| Continuous Drain Current (ID) |
38A |
| Threshold Voltage |
3V |
| Rds On (Max) @ Id, Vgs |
69m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5168pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
125nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
300V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFP4227PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Active |
| FET Type |
N-Channel |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
25MOhm |
| Additional Feature |
FAST SWITCHING |
| Number of Elements |
1 |
| Power Dissipation-Max |
330W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
33 ns |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-247AC |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 46A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
65A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 10V |
| Rise Time |
20ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
31 ns |
| Turn-Off Delay Time |
21 ns |
| Continuous Drain Current (ID) |
65A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
200V |
| Transistor Application |
SWITCHING |
| Pulsed Drain Current-Max (IDM) |
260A |
| Dual Supply Voltage |
240V |
| Recovery Time |
150 ns |
| Nominal Vgs |
5 V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Lead Free |
Lead Free |
Infineon Technologies IRFP4232PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Bulk |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-247AC |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
430W Tc |
| Turn Off Delay Time |
64 ns |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Resistance |
35.7MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
250V |
| Current Rating |
60A |
| Operating Temperature |
-40°C~175°C TJ |
| Power Dissipation |
430W |
| Drain to Source Breakdown Voltage |
250V |
| Dual Supply Voltage |
250V |
| Rds On (Max) @ Id, Vgs |
35.7mOhm @ 42A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7290pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Turn On Delay Time |
37 ns |
| FET Type |
N-Channel |
| Input Capacitance |
7.29nF |
| Drain to Source Resistance |
35.7mOhm |
| Rds On Max |
35.7 mΩ |
| Nominal Vgs |
5 V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFP4410ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
16 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
97A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Turn Off Delay Time |
43 ns |
| Packaging |
Bulk |
| Published |
2004 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| Mount |
Through Hole |
| Factory Lead Time |
10 Weeks |
| Drain-source On Resistance-Max |
0.009Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4820pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
52ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
57 ns |
| Continuous Drain Current (ID) |
97A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| FET Type |
N-Channel |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
242 mJ |
| Recovery Time |
57 ns |
| Nominal Vgs |
4 V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 58A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFP4668PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Turn On Delay Time |
41 ns |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
9.7MOhm |
| Peak Reflow Temperature (Cel) |
250 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
520W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
520W |
| Case Connection |
DRAIN |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-247AC |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10720pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
130A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
241nC @ 10V |
| Rise Time |
105ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
74 ns |
| Turn-Off Delay Time |
64 ns |
| Continuous Drain Current (ID) |
130A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
200V |
| FET Type |
N-Channel |
| Pulsed Drain Current-Max (IDM) |
520A |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
760 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
5 V |
| Height |
24.99mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
9.7m Ω @ 81A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFP4868PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Transistor Application |
SWITCHING |
| Number of Terminations |
3 |
| Resistance |
32MOhm |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
517W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
517W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-247AC |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C |
70A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
270nC @ 10V |
| Rise Time |
16ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Turn-Off Delay Time |
62 ns |
| Continuous Drain Current (ID) |
70A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
300V |
| Rds On (Max) @ Id, Vgs |
32m Ω @ 42A, 10V |
| Pulsed Drain Current-Max (IDM) |
280A |
| Recovery Time |
351 ns |
| Max Junction Temperature (Tj) |
175°C |
| Height |
24.99mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
10774pF @ 50V |
| Lead Free |
Lead Free |
Infineon Technologies IRFP7718PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
517W Tc |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Channels |
1 |
| Turn Off Delay Time |
266 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
160 ns |
| Turn On Delay Time |
58 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
29550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
830nC @ 10V |
| Rise Time |
164ns |
| Drain to Source Voltage (Vdss) |
75V |
| Power Dissipation |
517W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
195A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
75V |
| Avalanche Energy Rating (Eas) |
2004 mJ |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFP9140NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Bulk |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
117mOhm |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Voltage - Rated DC |
-100V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-23A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Elements |
1 |
| Power Dissipation-Max |
140W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
120W |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
-4V |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
117m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
23A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
97nC @ 10V |
| Rise Time |
67ns |
| Drain to Source Voltage (Vdss) |
100V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
51 ns |
| Continuous Drain Current (ID) |
-23A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
15 ns |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
76A |
| Dual Supply Voltage |
-100V |
| Recovery Time |
220 ns |
| Nominal Vgs |
-4 V |
| Height |
20.3mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Contains Lead, Lead Free |