Showing 1957–1968 of 7598 results
Infineon Technologies IRFPS37N50APBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Voltage - Rated DC |
500V |
| Package / Case |
TO-274AA |
| Number of Pins |
3 |
| Supplier Device Package |
SUPER-247™ (TO-274AA) |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
446W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Power Dissipation |
446W |
| Current Rating |
36A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
130mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5579pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
98ns |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
36A |
| Drain to Source Breakdown Voltage |
500V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR024NTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
75mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Current Rating |
17A |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
45W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
38W |
| Number of Terminations |
2 |
| Turn On Delay Time |
4.9 ns |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
370pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
17A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
34ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27 ns |
| Turn-Off Delay Time |
19 ns |
| Continuous Drain Current (ID) |
17A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Dual Supply Voltage |
55V |
| Recovery Time |
83 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
2.52mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFR1010ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
42 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Element Configuration |
Single |
| Factory Lead Time |
14 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
42A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Published |
2004 |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-252AA |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 42A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2840pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Rise Time |
76ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
48 ns |
| Continuous Drain Current (ID) |
42A |
| Power Dissipation |
140W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0075Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Avalanche Energy Rating (Eas) |
220 mJ |
| Nominal Vgs |
4 V |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR1205TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
69W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
27mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
37A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
107W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-252AA |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
44A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
69ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Turn-Off Delay Time |
47 ns |
| Continuous Drain Current (ID) |
37A |
| Turn On Delay Time |
7.3 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
98 ns |
| Nominal Vgs |
4 V |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.8mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFR12N25D
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
144W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
260m Ω @ 8.4A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
810pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±30V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRFR13N20DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
830pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
235m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±30V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
13A |
| Drain-source On Resistance-Max |
0.235Ohm |
| Pulsed Drain Current-Max (IDM) |
52A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
130 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR13N20DTR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
830pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
235m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±30V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
13A |
| Drain-source On Resistance-Max |
0.235Ohm |
| Pulsed Drain Current-Max (IDM) |
52A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
130 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRFR220NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
43W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR220NTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
43W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
20A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
46 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRFR220NTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
6.4 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
600MOhm |
| Termination |
SMD/SMT |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
5A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
43W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
43W |
| Case Connection |
DRAIN |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
200V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
5A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Rise Time |
11ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
5A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| FET Type |
N-Channel |
| Pulsed Drain Current-Max (IDM) |
20A |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
46 mJ |
| Recovery Time |
140 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Switching Current |
5A |
| Height |
2.52mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.9A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFR2405TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2000 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Qualification Status |
Not Qualified |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Part Status |
Active |
| Number of Elements |
1 |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2430pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
56A Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
110W Tc |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.016Ohm |
| Pulsed Drain Current-Max (IDM) |
220A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
130 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR2407TRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
42A |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Series |
HEXFET® |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
75V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
90ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
26m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
42A |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.026Ohm |
| Pulsed Drain Current-Max (IDM) |
170A |
| Avalanche Energy Rating (Eas) |
130 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Contains Lead |