Showing 1969–1980 of 7598 results
Infineon Technologies IRFR2905ZTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
1380pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14.5m Ω @ 36A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
42A |
| Drain-source On Resistance-Max |
0.0145Ohm |
| Pulsed Drain Current-Max (IDM) |
240A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
82 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR2905ZTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Number of Terminations |
2 |
| Resistance |
14.5MOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
42A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
110W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
110W |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14.5m Ω @ 36A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1380pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
42A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Rise Time |
66ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
35 ns |
| Turn-Off Delay Time |
31 ns |
| Continuous Drain Current (ID) |
59A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
14 ns |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
82 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
2.39mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFR3410PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Discontinued |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
3W Ta 110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| Factory Lead Time |
20 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
not_compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
39m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR3410TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
12 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
39m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.039Ohm |
| Pulsed Drain Current-Max (IDM) |
125A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
140 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR3410TRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
12 ns |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
3W Ta 110W Tc |
| Turn Off Delay Time |
40 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
110W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Rise Time |
27ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
31A |
| Rds On (Max) @ Id, Vgs |
39mOhm @ 18A, 10V |
| FET Type |
N-Channel |
| Input Capacitance |
1.69nF |
| Drain to Source Resistance |
39mOhm |
| Rds On Max |
39 mΩ |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFR3418PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
3.8W Ta 140W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3510pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
94nC @ 10V |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
Infineon Technologies IRFR3504ZTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Current |
42A |
| Number of Terminations |
2 |
| Resistance |
9MOhm |
| Voltage - Rated DC |
40V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
42A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Voltage |
40V |
| Power Dissipation-Max |
90W Tc |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs (Max) |
±20V |
| Power Dissipation |
90W |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 42A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1510pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
42A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Rise Time |
74ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Fall Time (Typ) |
38 ns |
| Turn-Off Delay Time |
30 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
77A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
77 mJ |
| Height |
2.26mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies IRFR3704TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
90W Tc |
| Voltage - Rated DC |
20V |
| Mount |
Surface Mount |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Operating Temperature |
-55°C~175°C TJ |
| Current Rating |
75A |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
75A |
| Rds On (Max) @ Id, Vgs |
9.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1996pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
98ns |
| Drain to Source Voltage (Vdss) |
20V |
| Power Dissipation |
90W |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
1.996nF |
| Drain to Source Resistance |
14mOhm |
| Rds On Max |
9.5 mΩ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR3704ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Contact Plating |
Tin |
| Voltage - Rated DC |
20V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
60A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
48W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
48W |
| Number of Terminations |
2 |
| Turn On Delay Time |
41 ns |
| Threshold Voltage |
2.1V |
| JEDEC-95 Code |
TO-252AA |
| Rds On (Max) @ Id, Vgs |
8.4m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1190pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
60A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Rise Time |
8.9ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Turn-Off Delay Time |
4.9 ns |
| Continuous Drain Current (ID) |
60A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0084Ohm |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Recovery Time |
19 ns |
| Height |
2.26mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR3706PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
88W Tc |
| Turn Off Delay Time |
17 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
88W |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
9MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Current Rating |
75A |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2410pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 4.5V |
| Rise Time |
87ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
4.8 ns |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Turn On Delay Time |
6.8 ns |
| Dual Supply Voltage |
20V |
| Input Capacitance |
2.41nF |
| Drain to Source Resistance |
11mOhm |
| Rds On Max |
9 mΩ |
| Nominal Vgs |
2 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
9mOhm @ 15A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFR3707PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
61A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
87W Tc |
| Turn Off Delay Time |
11.8 ns |
| Current Rating |
61A |
| Mount |
Surface Mount |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
13MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.3 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1990pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
30V |
| Power Dissipation |
87W |
| Turn On Delay Time |
8.5 ns |
| Continuous Drain Current (ID) |
61A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
1.99nF |
| Drain to Source Resistance |
17.5mOhm |
| Rds On Max |
13 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR3707ZTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
50W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
9.5MOhm |
| Voltage - Rated DC |
30V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
56A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
50W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Threshold Voltage |
1.8V |
| JEDEC-95 Code |
TO-252AA |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
56A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Rise Time |
11ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.3 ns |
| Turn-Off Delay Time |
12 ns |
| Continuous Drain Current (ID) |
56A |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
220A |
| Dual Supply Voltage |
30V |
| Avalanche Energy Rating (Eas) |
42 mJ |
| Nominal Vgs |
1.8 V |
| Height |
2.26mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |