Showing 1981–1992 of 7598 results
Infineon Technologies IRFR3709ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
86A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
2330pF @ 15V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.0065Ohm |
| Pulsed Drain Current-Max (IDM) |
340A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
100 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR3806TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Power Dissipation |
71W |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
15.8MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
71W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Turn-Off Delay Time |
49 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15.8m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
43A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
40ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
47 ns |
| Continuous Drain Current (ID) |
43mA |
| JEDEC-95 Code |
TO-252AA |
| Turn On Delay Time |
6.3 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Nominal Vgs |
2 V |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
Infineon Technologies IRFR4104TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
12 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
2950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
89nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 42A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
42A |
| Drain-source On Resistance-Max |
0.0055Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
145 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR4105ZTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
48W Tc |
| Power Dissipation |
48W |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Turn Off Delay Time |
26 ns |
| Turn On Delay Time |
10 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
740pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Rise Time |
40ns |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
24 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
24.5mOhm @ 18A, 10V |
| Drain to Source Breakdown Voltage |
55V |
| Input Capacitance |
740pF |
| Drain to Source Resistance |
24.5mOhm |
| Rds On Max |
24.5 mΩ |
| Height |
2.38mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFR4615PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
144W Tc |
| Turn Off Delay Time |
25 ns |
| Power Dissipation |
144W |
| Contact Plating |
Tin |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
42MOhm |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
15 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1750pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
35ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
33A |
| Threshold Voltage |
5V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 21A, 10V |
| Dual Supply Voltage |
150V |
| Nominal Vgs |
5 V |
| Height |
1.778mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR4620TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
78MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
144W Tc |
| Element Configuration |
Single |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
144W |
| Fall Time (Typ) |
14.8 ns |
| Turn-Off Delay Time |
25.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
78m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1710pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
24A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Rise Time |
22.4ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13.4 ns |
| Continuous Drain Current (ID) |
24A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Max Junction Temperature (Tj) |
175°C |
| Height |
2.52mm |
| Length |
10.3886mm |
| Width |
6.73mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR48ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
91W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
91W |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
11MOhm |
| Voltage - Rated DC |
55V |
| Current Rating |
62A |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1720pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
61ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
42A |
| Threshold Voltage |
4V |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Turn On Delay Time |
15 ns |
| Recovery Time |
40 ns |
| Nominal Vgs |
4 V |
| Height |
2.3876mm |
| Length |
10.3886mm |
| Width |
6.73mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 37A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFR5305PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Published |
2000 |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
31A |
| Drain-source On Resistance-Max |
0.065Ohm |
| Pulsed Drain Current-Max (IDM) |
110A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
280 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR540ZTRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
14 ns |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
91W Tc |
| Turn Off Delay Time |
43 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
91W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
59nC @ 10V |
| Rise Time |
42ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
34 ns |
| Continuous Drain Current (ID) |
35A |
| Rds On (Max) @ Id, Vgs |
28.5mOhm @ 21A, 10V |
| FET Type |
N-Channel |
| Input Capacitance |
1.69nF |
| Drain to Source Resistance |
28.5mOhm |
| Rds On Max |
28.5 mΩ |
| Height |
2.26mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFR5505PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
57W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
650pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 9.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
18A |
| Drain-source On Resistance-Max |
0.11Ohm |
| Pulsed Drain Current-Max (IDM) |
64A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
150 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR6215TRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1998 |
| Reach Compliance Code |
not_compliant |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
-150V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
295m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
36ns |
| Current Rating |
-13A |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
13A |
| JEDEC-95 Code |
TO-252AA |
| Drain-source On Resistance-Max |
0.295Ohm |
| Pulsed Drain Current-Max (IDM) |
44A |
| Avalanche Energy Rating (Eas) |
310 mJ |
| RoHS Status |
Non-RoHS Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Contains Lead |
Infineon Technologies IRFR7446TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Series |
HEXFET®, StrongIRFET™ |
| JESD-609 Code |
e3 |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
98W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Turn On Delay Time |
9.8 ns |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
56A |
| Rds On (Max) @ Id, Vgs |
3.9m Ω @ 56A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3150pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
56A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
40V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
520A |
| DS Breakdown Voltage-Min |
40V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |