Showing 1993–2004 of 7598 results
Infineon Technologies IRFR7540TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
140W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 66A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
90A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR7546TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
99W Tc |
| Turn Off Delay Time |
36 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Published |
2007 |
| Series |
StrongIRFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.9m Ω @ 43A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Rise Time |
28ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
56A |
| Threshold Voltage |
3.7V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0079Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| DS Breakdown Voltage-Min |
60V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR7740TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
87A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
55 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.2m Ω @ 52A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4430pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
126nC @ 10V |
| Rise Time |
36ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
87A |
| Threshold Voltage |
3.7V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0072Ohm |
| DS Breakdown Voltage-Min |
75V |
| Avalanche Energy Rating (Eas) |
242 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFR812PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
3.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
78W Tc |
| Turn Off Delay Time |
24 ns |
| Packaging |
Tube |
| Published |
2004 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
3.6A |
| Threshold Voltage |
3V |
| Rds On (Max) @ Id, Vgs |
2.2 Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
810pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
22ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Turn On Delay Time |
14 ns |
| Power Dissipation |
78W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Recovery Time |
110 ns |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| REACH SVHC |
No SVHC |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR9024NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
38W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
11A |
| Drain-source On Resistance-Max |
0.175Ohm |
| Pulsed Drain Current-Max (IDM) |
44A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
62 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR9024NTRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
38W Tc |
| Turn Off Delay Time |
23 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Published |
2004 |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Turn On Delay Time |
13 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
55ns |
| Drain to Source Voltage (Vdss) |
55V |
| Power Dissipation |
38W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
-11A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-55V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Avalanche Energy Rating (Eas) |
62 mJ |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR9120NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1998 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
480m Ω @ 3.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Reach Compliance Code |
not_compliant |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
6.6A |
| Drain-source On Resistance-Max |
0.48Ohm |
| Pulsed Drain Current-Max (IDM) |
26A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
100 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR9120NTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Published |
1998 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
480m Ω @ 3.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
6.6A |
| Drain-source On Resistance-Max |
0.48Ohm |
| Pulsed Drain Current-Max (IDM) |
26A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
100 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRFR9N20DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
86W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
14 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±30V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
9.4A |
| Drain-source On Resistance-Max |
0.38Ohm |
| Pulsed Drain Current-Max (IDM) |
38A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
100 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFR9N20DTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
not_compliant |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
86W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Published |
2000 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
200V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Current Rating |
9.4A |
| Rise Time |
16ns |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
9.4A |
| JEDEC-95 Code |
TO-252AA |
| Drain-source On Resistance-Max |
0.38Ohm |
| Pulsed Drain Current-Max (IDM) |
38A |
| Avalanche Energy Rating (Eas) |
100 mJ |
| RoHS Status |
Non-RoHS Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Contains Lead |
Infineon Technologies IRFS17N20DTRLP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
18 ns |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Max Operating Temperature |
175°C |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation (Max) |
3.8W Ta 140W Tc |
| Min Operating Temperature |
-55°C |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±30V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
170mOhm @ 9.8A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
19ns |
| Element Configuration |
Single |
| Power Dissipation |
140W |
| Fall Time (Typ) |
6.6 ns |
| Continuous Drain Current (ID) |
16A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
200V |
| Input Capacitance |
1.1nF |
| Rds On Max |
170 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFS23N20DTRLP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
3.8W |
| Factory Lead Time |
14 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
100mOhm |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
24A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
3.8W Ta 170W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
24A |
| Threshold Voltage |
5.5V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1960pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
24A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Rise Time |
32ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
16 ns |
| Turn-Off Delay Time |
26 ns |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Nominal Vgs |
5.5 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |