Showing 2005–2016 of 7598 results
Infineon Technologies IRFS3006TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
118 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
2.5MOhm |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Rise Time |
182ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
375W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 170A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8970pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
189 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Continuous Drain Current (ID) |
195A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
270A |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IRFS31N20DTRRP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2000 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
2370pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
107nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
82m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±30V |
| Drain Current-Max (Abs) (ID) |
31A |
| Drain-source On Resistance-Max |
0.082Ohm |
| Pulsed Drain Current-Max (IDM) |
124A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
420 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFS3207PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2006 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
7600pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.0045Ohm |
| Pulsed Drain Current-Max (IDM) |
720A |
| DS Breakdown Voltage-Min |
75V |
| Avalanche Energy Rating (Eas) |
910 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFS3207TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
300W |
| Factory Lead Time |
12 Weeks |
| Resistance |
4.5MOhm |
| Voltage - Rated DC |
75V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
180A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
300W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
180A |
| Threshold Voltage |
4V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7600pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
170A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
| Rise Time |
120ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
74 ns |
| Turn-Off Delay Time |
68 ns |
| Turn On Delay Time |
29 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
720A |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS3307PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
200W |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
51 ns |
| Published |
2006 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
6.2MOhm |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
130A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5150pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
120ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
63 ns |
| FET Type |
N-Channel |
| Turn On Delay Time |
26 ns |
| Drain to Source Breakdown Voltage |
75V |
| Height |
4.572mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
6.3m Ω @ 75A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFS3307TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
51 ns |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
6.3MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
26 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5150pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
120ns |
| Fall Time (Typ) |
63 ns |
| Continuous Drain Current (ID) |
120A |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
75V |
| Avalanche Energy Rating (Eas) |
270 mJ |
| Height |
4.572mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
200W |
| Lead Free |
Lead Free |
Infineon Technologies IRFS3607TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Power Dissipation-Max |
140W Tc |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
96 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3070pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Rise Time |
110ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Case Connection |
DRAIN |
| Power Dissipation |
140W |
| Turn-Off Delay Time |
43 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.009Ohm |
| Drain to Source Breakdown Voltage |
75V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
16 ns |
| Lead Free |
Lead Free |
Infineon Technologies IRFS38N20DTRLP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
320W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
54mOhm |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
38A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
3.8W Ta 300W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
44A |
| Threshold Voltage |
5V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
54m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
43A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
91nC @ 10V |
| Rise Time |
95ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
47 ns |
| Turn-Off Delay Time |
29 ns |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
200V |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
460 mJ |
| Recovery Time |
240 ns |
| Nominal Vgs |
5 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4010-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
190A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2005 |
| Power Dissipation |
380W |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G6 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Threshold Voltage |
4V |
| Turn On Delay Time |
19 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 110A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9830pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Rise Time |
56ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
48 ns |
| Reverse Recovery Time |
60 ns |
| Continuous Drain Current (ID) |
190A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.004Ohm |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
330 mJ |
| Nominal Vgs |
4 V |
| Height |
4.55mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4010TRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2008 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
77 ns |
| Continuous Drain Current (ID) |
180A |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.7m Ω @ 106A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9575pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
215nC @ 10V |
| Rise Time |
86ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
375W |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0047Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
720A |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4020PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
16 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount, Through Hole |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Published |
2007 |
| Power Dissipation |
100W |
| Threshold Voltage |
4.9V |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.3 ns |
| Continuous Drain Current (ID) |
18A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.8 ns |
| Drain-source On Resistance-Max |
0.105Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
52A |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
94 mJ |
| Recovery Time |
120 ns |
| Nominal Vgs |
4.9 V |
| Height |
4.83mm |
| Length |
10.668mm |
| Width |
4.826mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFS4115TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
11.8MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
375W Tc |
| Element Configuration |
Single |
| Part Status |
Active |
| Power Dissipation |
375W |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
39 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.1m Ω @ 62A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5270pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
195A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
73ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| Turn-Off Delay Time |
41 ns |
| Continuous Drain Current (ID) |
195A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
99A |
| Drain to Source Breakdown Voltage |
150V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.652mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |