Showing 2017–2028 of 7598 results
Infineon Technologies IRFS4127TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
22MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Power Dissipation-Max |
375W Tc |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5380pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
72A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
18ns |
| Power Dissipation |
375W |
| Case Connection |
DRAIN |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
56 ns |
| Continuous Drain Current (ID) |
72A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.652mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS41N15DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
41A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2520pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±30V |
| Drain Current-Max (Abs) (ID) |
41A |
| Drain-source On Resistance-Max |
0.045Ohm |
| Pulsed Drain Current-Max (IDM) |
164A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
470 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFS4227PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
62A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330W Tc |
| Turn Off Delay Time |
21 ns |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2005 |
| Power Dissipation |
330W |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
30V |
| Turn On Delay Time |
33 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
26m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 10V |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
62A |
| Threshold Voltage |
5V |
| Drain-source On Resistance-Max |
0.026Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Case Connection |
DRAIN |
| Pulsed Drain Current-Max (IDM) |
260A |
| Dual Supply Voltage |
240V |
| Recovery Time |
150 ns |
| Nominal Vgs |
5 V |
| Height |
4.826mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4227TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Power Dissipation-Max |
330W Tc |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
26MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Part Status |
Active |
| Element Configuration |
Single |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
33 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
26m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
62A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 10V |
| Rise Time |
20ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330W |
| Fall Time (Typ) |
31 ns |
| Turn-Off Delay Time |
21 ns |
| Continuous Drain Current (ID) |
62A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
260A |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4229PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
45A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330W Tc |
| Turn Off Delay Time |
30 ns |
| Power Dissipation |
330W |
| Mount |
Surface Mount |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Operating Temperature |
-40°C~175°C TJ |
| Turn On Delay Time |
18 ns |
| Drain to Source Breakdown Voltage |
250V |
| Dual Supply Voltage |
250V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
45A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
48m Ω @ 26A, 10V |
| Recovery Time |
290 ns |
| Nominal Vgs |
5 V |
| Height |
4.572mm |
| Length |
10.67mm |
| Width |
9.65mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4321-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
86A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
350W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14.7m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 50V |
| JESD-30 Code |
R-PSSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
86A |
| Drain-source On Resistance-Max |
0.0147Ohm |
| Pulsed Drain Current-Max (IDM) |
343A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
120 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4321TRL7PP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
25 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Weight |
1.59999g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
86A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| JESD-30 Code |
R-PSSO-G6 |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Power Dissipation (Max) |
350W Tc |
| Number of Channels |
1 |
| Rise Time |
60ns |
| Drain to Source Voltage (Vdss) |
150V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14.7m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
86A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Pulsed Drain Current-Max (IDM) |
343A |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4321TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Resistance |
15MOhm |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Factory Lead Time |
12 Weeks |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
350W Tc |
| Element Configuration |
Single |
| Power Dissipation |
350W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 33A, 10V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 25V |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
4.46nF |
| Rise Time |
60ns |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
35 ns |
| Turn-Off Delay Time |
25 ns |
| Continuous Drain Current (ID) |
85A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
85A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
12mOhm |
| Rds On Max |
15 mΩ |
| Nominal Vgs |
5 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4410TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
200W |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
10MOhm |
| Number of Terminations |
2 |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
96A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
96A |
| Threshold Voltage |
4V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 58A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5150pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
88A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
80ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
50 ns |
| Turn-Off Delay Time |
55 ns |
| Turn On Delay Time |
24 ns |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
220 mJ |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Contains Lead |
Infineon Technologies IRFS4410ZTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Qualification Status |
Not Qualified |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| JESD-609 Code |
e3 |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
9MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
IRFS4410 |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Current - Continuous Drain (Id) @ 25°C |
97A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 58A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4820pF @ 50V |
| Power Dissipation-Max |
230W Tc |
| Number of Elements |
1 |
| Rise Time |
52ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
57 ns |
| Continuous Drain Current (ID) |
97A |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
242 mJ |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4510TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
61A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
28 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3180pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
140W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13.9m Ω @ 37A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
32ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
61A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
250A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS4610PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
73A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
53 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Power Dissipation |
190W |
| Published |
2006 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Resistance |
14mOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Current Rating |
73A |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
18 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3550pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Rise Time |
87ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
70 ns |
| Continuous Drain Current (ID) |
73A |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
290A |
| Case Connection |
DRAIN |
| Dual Supply Voltage |
100V |
| Recovery Time |
53 ns |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |